3D磁性感測器基板研究

Abstract

本論文用電漿輔助化學氣相沈積(Plasmaenhanced chemical vapor deposition)、光微影技術(Photolithography)、電感耦合式乾蝕刻(inductivelycoupled plasma reactive ion etching)、濕蝕刻(wet etching)製作出三維立體結構矽基板，以達到平面化3D立體功能。利用化學氣相沉積1um的二氧化矽作為矽基板的硬遮罩(Hard Mask)，再利用曝光微影技術和電感耦合式乾蝕刻將所需圖形定義在(100)、(110)、(111)方向的Si基板上，再利用不同濃度的KOH和IPA蝕刻液以70°C濕蝕刻矽基板，並探討不同濃度的蝕刻溶液對不同晶向矽基板，其所產生斜面的平坦化程度的關係，從實驗結果得知以KOH(5M)和IPA(5M)蝕刻液蝕刻(100)晶向的Si能達到研究所需的平坦化三維斜面結構。平坦化三維斜面結構有利於將來在此斜面沉積不同材料層或放置各種元件時，達到更好效能的目的。

In this paper, we usedplasma enhanced chemical vapor deposition, Photolithography, inductively coupled plasma reactive ion etching, wet etching to produce 3D structure of the Si substrate to achieve the 3D planarization function. Deposited SiO2 1um on Si substrate as a hard maskby plasma enhanced chemical vapor deposition, and then use Photolithography and inductively coupled plasma reactive ion etching to define the desired pattern on (100), (110),(111) Si substrate, and then use different concentrations of KOH, IPA etching solution at70 ° C wet etching Si substrate.Explore different solutions for different etching Si substrate to produce the degree of flattening the slope.From the experimental results with KOH (5M) and IPA (5M) etching solution etch (100) crystal orientation of Si.3D inclined planar configuration to achieve the required study. 3D flat slope structure is conducive to the future, when this slope sedimentary layers of different materials or place the various components, to achieve the purpose of better performance.