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標題: | 增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之研製 Fabrication and Characterization of Enhancement-Mode AlGaN/GaN Fin-Shaped Metal-Oxide-Semiconductor High-Electron Mobility Transistors |
作者: | Po-Chun Yeh 葉伯淳 |
指導教授: | 彭隆瀚 |
關鍵字: | 電晶體,鰭狀,氮化鎵,增強型,金氧半高電子遷移率電晶體, Transistor,Fin-Shaped,GaN,Enhancement-Mode,MOS-HEMT, |
出版年 : | 2015 |
學位: | 博士 |
摘要: | 本研究中,吾人成功製作出一種增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體,透過結合鰭狀結構與閘極掘入技術,並以光致電化學氧化法(PEC oxidation)與電漿輔助型原子層沉積技術(PE-ALD)生成之雙層氧化層作為閘極絕緣層與表面鈍化層,實驗數據顯示電晶體之臨界電壓(Vth)隨不同閘極掘入深度與不同閘極面積而呈現線性變化,斜率分別為0.36 V/nm與 -0.32 V/μm2。對於閘極長度與寬度為250nm×360nm的元件特性,其臨界電壓Vth = 1.2V,電流開關比(Current on/off ratio)高達10^8,所量得的電流增益截止頻率fT為9GHz,而最大操作頻率fMAX為36GHz。所觀察到的現象可歸因於兩個相互結合的效應:(a) 閘極掘入元件上有一介面負電荷密度為3.2 μC/cm2可以部份抵銷極化電荷的效應;(b) 側壁鈍化提供高電子遷移率的通道。 In this thesis, we present an enhancement-mode AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT), fabricated by combining gate recess process and fin-shape structure, featuring double-layer oxides composed of photo-enhanced-chemical (PEC) oxidation and plasma-enhanced atomic layer deposition (PE-ALD) oxide, which was shown to support threshold voltage (Vth) with a linear slope of 0.36 V/nm and -0.32 V/μm2, respectively, scaled with recess depth and device area. The proposed device exhibited Vth = 1.2V, current on/off ratio of 10^8, and cutoff frequency of unity current gain/power gain (fT/fmax) = 9/36GHz at gate length/width = 250/360nm. These observations can be ascribed to the combination effects of (a) interfacial negative space charge of 3.2 μC/cm2 in the gate-recessed device to partially compensate the polarization charges, and (b) side-wall passivation to preserve the high mobility channel. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52808 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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