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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚 | |
| dc.contributor.author | Po-Chun Yeh | en |
| dc.contributor.author | 葉伯淳 | zh_TW |
| dc.date.accessioned | 2021-06-15T16:28:36Z | - |
| dc.date.available | 2020-08-17 | |
| dc.date.copyright | 2015-08-17 | |
| dc.date.issued | 2015 | |
| dc.date.submitted | 2015-08-13 | |
| dc.identifier.citation | 1 Gordon E. Moore, “Cramming More Components onto Integrated Circuits,” Electronics, pp. 114–117, April 19, 1965.
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Tripathy 'Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors,' Applied Physics Letters, vol. 106, 053502, 2015. 84 Po-Chun Yeh, Yun-Wei Lin, Yue-Lin Huang, Jui-Hung Hung, Bo-Ren Lin, Lucas Yang, Cheng-Han Wu, Tzu-Kuan Wu, Chao-Hsin Wu, and Lung-Han Peng, 'Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides,' Applied Physics Express, vol. 8, 084101, 2015. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/52808 | - |
| dc.description.abstract | 本研究中，吾人成功製作出一種增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體，透過結合鰭狀結構與閘極掘入技術，並以光致電化學氧化法（PEC oxidation）與電漿輔助型原子層沉積技術（PE-ALD）生成之雙層氧化層作為閘極絕緣層與表面鈍化層，實驗數據顯示電晶體之臨界電壓（Vth）隨不同閘極掘入深度與不同閘極面積而呈現線性變化，斜率分別為0.36 V/nm與 -0.32 V/μm2。對於閘極長度與寬度為250nm×360nm的元件特性，其臨界電壓Vth = 1.2V，電流開關比（Current on/off ratio）高達10^8，所量得的電流增益截止頻率fT為9GHz，而最大操作頻率fMAX為36GHz。所觀察到的現象可歸因於兩個相互結合的效應：(a) 閘極掘入元件上有一介面負電荷密度為3.2 μC/cm2可以部份抵銷極化電荷的效應；(b) 側壁鈍化提供高電子遷移率的通道。 | zh_TW |
| dc.description.abstract | In this thesis, we present an enhancement-mode AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMT), fabricated by combining gate recess process and fin-shape structure, featuring double-layer oxides composed of photo-enhanced-chemical (PEC) oxidation and plasma-enhanced atomic layer deposition (PE-ALD) oxide, which was shown to support threshold voltage (Vth) with a linear slope of 0.36 V/nm and -0.32 V/μm2, respectively, scaled with recess depth and device area. The proposed device exhibited Vth = 1.2V, current on/off ratio of 10^8, and cutoff frequency of unity current gain/power gain (fT/fmax) = 9/36GHz at gate length/width = 250/360nm. These observations can be ascribed to the combination effects of (a) interfacial negative space charge of 3.2 μC/cm2 in the gate-recessed device to partially compensate the polarization charges, and (b) side-wall passivation to preserve the high mobility channel. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T16:28:36Z (GMT). No. of bitstreams: 1 ntu-104-D97941006-1.pdf: 11003786 bytes, checksum: c495093b1e2cb166e67e2154f95da739 (MD5) Previous issue date: 2015 | en |
| dc.description.tableofcontents | 第一章 緒論 1
1.1 簡介 1 1.2 研究動機與目的 6 1.3 論文內容概述 8 第二章 氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之理論介紹 11 2.1 氮化鎵之基本特性與二維電子氣形成機制 11 2.2 氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體 18 2.3 增強型氮化鋁鎵/氮化鎵高電子遷移率電晶體 22 2.4 鰭狀氮化鋁鎵/氮化鎵高電子遷移率電晶體 27 2.5 金屬-半導體接觸原理 30 2.6 光致電化學氧化法原理 34 2.7 原子層沉積技術 36 第三章 增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體元件製程與結果 41 3.1 電子束微影技術 41 3.2 表面清潔 45 3.3 元件隔離 48 3.4 晶格面蝕刻法 49 3.5 歐姆接觸 52 3.6 光致電化學氧化法 54 3.7 電晶體元件結構 56 3.8 電晶體元件製程設計 59 3.9 電晶體製作流程 63 3.10 電晶體元件形貌與結構分析 89 第四章 增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體直流及高頻量測與特性研究 95 4.1 電晶體直流量測系統簡介 95 4.2 電晶體直流特性與討論 97 4.3 電晶體特性對元件尺寸之關係與討論 102 4.4 電晶體高頻量測 108 4.5 電晶體高頻特性與討論 114 4.6 電晶體特性與其他研究成果之比較與討論 116 第五章 結論與未來展望 119 5.1 結論 119 5.2 未來展望 121 參考文獻 123 | |
| dc.language.iso | zh-TW | |
| dc.subject | 電晶體 | zh_TW |
| dc.subject | 鰭狀 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 增強型 | zh_TW |
| dc.subject | 金氧半高電子遷移率電晶體 | zh_TW |
| dc.subject | Enhancement-Mode | en |
| dc.subject | Fin-Shaped | en |
| dc.subject | GaN | en |
| dc.subject | MOS-HEMT | en |
| dc.subject | Transistor | en |
| dc.title | 增強型鰭狀氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之研製 | zh_TW |
| dc.title | Fabrication and Characterization of Enhancement-Mode AlGaN/GaN Fin-Shaped Metal-Oxide-Semiconductor High-Electron Mobility Transistors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 王維新,李清庭,綦振瀛,黃玉林,吳育任 | |
| dc.subject.keyword | 電晶體,鰭狀,氮化鎵,增強型,金氧半高電子遷移率電晶體, | zh_TW |
| dc.subject.keyword | Transistor,Fin-Shaped,GaN,Enhancement-Mode,MOS-HEMT, | en |
| dc.relation.page | 133 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2015-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-104-1.pdf 未授權公開取用 | 10.75 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。