奈米線生物感測器感測參數分析與其未來應用於市場之挑戰

Abstract

隨著科技持續的進步與醫療概念的演進，重點式照護診斷的儀器成為研究發展的一個重點，在許多發展中的重點式照護診斷技術當中，奈米線場效電晶體是一個以高靈敏度與快速檢出著稱相當有潛力的一支技術，而心肌冠狀動脈綜合症在現代已成為一個嚴重影響人類壽命與生活品質的一個疾病，因此仔細的探索將奈米線場效電晶體應用於急性冠狀動脈診斷的市場是有必要的，同時這個分析也顯示一些當前以奈米線場效電晶體作為重點式照護檢測技術所需克服的議題。 基於市場分析的結果，本論文採用標準商業CMOS製程製作多晶矽奈米線場效電晶體，用於心血管疾病檢測，為了改善由市場分析所總結出的重要議題，本論文以電腦模擬不同摻雜濃度、通道厚度、氧化層厚度的結果，並以實驗測試所製作之奈米線場效電晶體。

As technologies continuously developed, point-of-care testing (POCT) has become an important research direction. Among different developed POCT technologies, nanowire field effect transistor (NW-FET) is one of promising technologies featuring high sensitivity and rapid diagnosis. On the other hand, acute coronary syndrome (ACS) has become a serious cardiovascular disease following developments of human societies. As a consequence, it is intriguing to have a detail market analysis for using NW-FET POCT technology in ACS diagnosis. At the same time, this analysis also shows important issues for the development of NW-FET based POCT technologies. Based on previous research results, commercial-available CMOS processes can be used to implement poly-silicon NW-FET for cardiovascular biomarker diagnosis. Since the market analysis shows several important issues for the development of NW-FET based PCT technologies, in this work, these issues, such as different doping concentration, oxide thickness, and channel depth, are addressed and verified in simulations. In addition, experiments are also employed to examine the fabricated devices. Based on this work, some of the major obstacles of CMOS-based NW-FET biosensors for POCT applications can be raised and evaluated.