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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49503完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王倫 | |
| dc.contributor.author | Yung Tai Sun | en |
| dc.contributor.author | 孫永泰 | zh_TW |
| dc.date.accessioned | 2021-06-15T11:31:50Z | - |
| dc.date.available | 2018-08-24 | |
| dc.date.copyright | 2016-08-24 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-08-16 | |
| dc.identifier.citation | [1] A. ROSE, 'Space-Charge-Limited Currents in Solids,' PHYSICAL REVIEW, vol. 97, pp. 1538-1544, 1955.
[2] M. A. LAMPERT, 'Simplified Theory of Space-Charge-Limited Currents in an Insulator with Traps,' PHYSICAL REVIEW, vol. 103, pp. 1648-1656, 1956. [3] E. J. L. H. Shirakawa, A. G. Macdiarmid, C. K. Chiang, and A. J. Heeger, 'Synthesis of Electrically Conducting Organic Polymers :Halogen Derivatives of Polyacetylene, (CH)x,' Journal of the Chemical Society, Chemical Communications, pp. 578-580, 1997. [4] S. A. V. C. W. Tang 'Organic electroluminescent diodes,' Applied Physics Letters, vol. 51, pp. 913-915, 1987. [5] H.-F. M. Yu-Chiang Chao, and Sheng-Fu Horng, 'Polymer space-charge-limited transistor,' Applied Physics Letters, vol. 88, p. 223510, 2006. [6] M.-C. N. Yu-Chiang Chao, Hsiao-Wen Zan , Hsin-Fei Meng, Ming-Che Ku, 'High-mobility polymer space–charge-limited transistor with grid-induced crystallinity,' Organic Electronics, vol. 12, pp. 78-82, 2010. [7] W. O.-Y. K. Nakayama, M. Uno, I. Osaka , K. Takimiya, J. Takeya, 'Flexible air-stable three-dimensional polymer field-effect transistors with high output current density,' Organic Electronics, vol. 14, pp. 2908-2915, 2013. [8] A. A.-C. Pier J. A. Sazio, Chris E. Finlayson,John R. Hayes, Thomas J. Scheidemantel, Neil F. Baril, Bryan R. Jackson, Dong-Jin Won, Feng Zhang, Elena R. Margine, Venkatraman Gopalan, Vincent H. Crespi, John V. Badding, 'Microstructured Optical Fibers as High-Pressure Microfluidic Reactors,' SCIENCE, vol. 311, pp. 1583-1586, 2006. [9] J. B. a. E. Snitzer, 'Fabrication of fibers with high rare-earth concentrations for Faraday isolator applications,' APPLIED OPTICS, vol. 34, pp. 6848-6854, 1995. [10] Y.-B. Huang, 'Fabrication of Schottky Phtodetectors by using Si-cored fibers,' Master, Graduate Institude of Photonics and Optoelectronics, National Taiwan University, 2015. [11] J. C. CheAnLin, and LonA.Wang, 'High-Q Si Microsphere Resonators Fabricated From Si-Cored Fibers for WGMs Excitation,' PHOTONICS TECHNOLOGY LETTERS, vol. 27, pp. 1355-1358, 2015. [12] Y. P. H. a. L. A. Wang, 'In-line silicon Schottky photodetectors on silicon cored fibers working in 1550 nm wavelength regimes,' APPLIED PHYSICS LETTERS, vol. 106, p. 191106, 2015. [13] Y. P. Chen, 'Stitching Submicron Periodic Patterns over a Planar Substrate and a Roller by Utilizing Step-and-Align Interference Lithography,' Master, Graduate Institude of Photonics and Optoelectronics, National Taiwan University, 2011. [14] X. Fang, 'Fabrication of Nano Metal Meshes by Nanoimprint Lithography for Organic Electronics Device Applications,' Master, Graduate Institude of Photonics and Optoelectronics National Taiwan University, 2015. [15] P. R. K. Stephen Y. Chou, and Preston J. Renstrom, 'Imprint of sub‐25 nm vias and trenches in polymers,' Applied Physics Letters, vol. 67, pp. 3114-3116, 1995. [16] P. R. K. Stephen Y. Chou, and Preston J. Renstrom, 'Nanoimprint lithography,' Journal of Vacuum Science & Technology B, vol. 14, pp. 4129-4133, 1996. [17] S. Y. C. a. P. R. Krauss, 'Imprint Lithography with Sub-10 nm Feature Size and High Throughput,' Microelectronic Engineering, vol. 35, pp. 237-240, 1997. [18] A. G. Hua Tan, and Stephen Y. Chou, 'Roller nanoimprint lithography,' Journal of Vacuum Science & Technology B, vol. 16, pp. 3926-3928, 2001. [19] C.-H. C. Yung-Pin Chen, Jer-Haur Chang, Hsin-Chieh Chiu, Guan-Yu Chen, Chieh-Hsiu Chiang, Lien-Sheng Chen, Ching-Tung Tseng, Chih-Hsien Lee, Jia-Yush Yen, and Lon A. Wang, 'Stitching periodic submicron fringes by utilizing step-and-align interference lithography,' Journal of Vacuum Science & Technology B, vol. 27, pp. 2951-2957, 2009. [20] J.-Y. Y. Lien-Sheng Chen, Yung-Pin Chen, Lon A. Wang, Tien-Tung Chung, Hung-I Lin, Ping-Hung Chen, Shu-Hung Chang, 'Longitudinal stitching of sub-micron periodic fringes on a roller,' Microelectronic Engineering, vol. 88, pp. 3235-3243, 2011. [21] L. Precision. Capacitive Linear Displacement Sensors : An Overview. Available: http://www.lionprecision.com/capacitive-sensors/index.html#apps [22] Y. NISHIJIMA, 'Moire Patterns: Their Application to Refractive Index and Refractive Index Gradient Measurements,' Optical Society of America, vol. 54, pp. 1-5, 1964. [23] J. W. M. a. D. W. P. G. A. Bassett, 'Moiré Patterns on Electron Micrographs, and their Application to the Study of Dislocations in Metals,' in Proceedings of the Royal Society of London. Series A, Mathematical and Physical Science, 1958, pp. 345-368. [24] K. S. Y. a. M. M. Ratnam, '2-D crack growth measurement using circular grating moire´ fringes and pattern matching,' STRUCTURAL CONTROL AND HEALTH MONITORING, vol. 18, pp. 404-415, 2011. [25] K. S. Y. H. M. Chan, M. M. Ratnam, 'Crack displacement sensing and measurement in concrete using circular grating moire fringes and pattern matching,' in Ninth International Symposium on Laser Metrology, 2008, p. 715529. [26] K.-R. W. Yen-Chu Chao, Hsin-Fei Meng, Hsiao-Wen Zan, Yung-Hsuan Hsu, 'Large-area non-close-packed nanosphere deposition by blade coating for vertical space-charge-limited transistor,' Organic Electronics, vol. 13, pp. 3177-3182, 2012. [27] Y.-Y. L. Yen-Ming Chen, Yu-Chiang Chao, Hsiao-Wen Zan, Hsin-Fei Meng, Sheng-Fu Horng, and Che-Hao Chang, 'Large-Area Nano-patterning and Fabrication of Vertical Transistor Array by Non-close-packed Polystyrene Spheres,' ACS Applied Material and Interface, vol. 7, pp. 18899-18903, 2015. [28] H.-F. M. Yu-Chiang Chaoa, Sheng-Fu Horngb, Chain-Shu Hsu, 'High-performance solution-processed polymer space-charge-limited transistor,' Organic Electronics, vol. 9, pp. 310-316, 2008. [29] K. M. Hiroki Tamura, Akio Tanaka, and Makoto Ito, 'Mechanism of Hydroxylation of Metal Oxide Surfaces,' Journal of Colloid and Interface Science, vol. 243, pp. 202-207, 2001. [30] F.-H. K. Jem-Kun Chen, Kuen-Fong Hsieh, Cheng-Tung Chou, and Feng-Chih Chang, 'Effect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithography,' Journal of Vacuum Science & Technology B, vol. 22, pp. 3233-3241, 2004. [31] C. G. C. Perret , F. Lazzarino, J. Tallal, S. Landis, R. Pelzer, 'Characterization of 8-in. wafers printed by nanoimprint lithography,' Microelectronic Engineering, vol. 73-74, pp. 172-177, 2004. [32] F. S. Cheng, S. Y. Yang, and C. C. Chen, 'Novel hydrostatic pressuring mechanism for soft UV-imprinting processes,' Journal of Vacuum Science & Technology B, vol. 26, pp. 132-136, Jan 2008. [33] V. W. B. D. R. Hines, E. D. Williams, Y. Shao, and S. A. Solin, 'Transfer printing methods for the fabrication of flexible organic electronics,' Journal of Applied Physics, vol. 101, p. 024503, 2007. [34] H. R. Volker Schmidt, Stephan Senz, Siegfried Karg, Walter Riess, and Ulrich Gosele, 'Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor,' Small, vol. 2, pp. 85-88, 2006. [35] N. H. Chenxi Lin, and Michelle L. Povinelli, 'Effect of aperiodicity on the broadband reflection of silicon nanorod structures for photovoltaics,' OPTICS EXPRESS, vol. 20, pp. 125-132, 2012. [36] L. E. B. Catalin M. Florea, Shyam S. Bayya, Brandon Shaw, Ish D. Aggarwal, Jas S.Sanghera, 'Recent advancements in anti-reflective surface structures (ARSS) for near- to mid-infrared optics,' 2013, p. 87080. [37] J. S. W. A.K. Chu, Z.Y. Tsai , C.K. Lee, 'A simple and cost-effective approach for fabricating pyramids on crystalline silicon wafers,' Solar Energy Materials & Solar Cells, vol. 93, pp. 1276–1280, 2009. [38] D. o. E. a. C. Engineering. KOH Etching of Silicon, Silicon Dioxide (SiO2) and Silicon Nitride (SiN). Available: http://www.cleanroom.byu.edu/KOH.phtml [39] X. L. a. P. W. Bohn, 'Metal-assisted chemical etching in HF/H2O2 produces porous silicon,' APPLIED PHYSICS LETTERS, vol. 77, pp. 2572-2574, 2000. [40] N. G. Zhipeng Huang, Peter Werner, Johannes de Boor, and Ulrich Gösele, 'Metal-Assisted Chemical Etching of Silicon: A Review,' Advance Material, vol. 23, pp. 285-308, 2011. [41] Z. H. Hee Han, Woo Lee, 'Metal-assisted chemical etching of silicon and nanotechnology applications,' Nano Today, vol. 9, pp. 271-304, 2014. [42] M. C. H. S.J. Wilson, 'The Optical Properties of 'Moth Eye' Antireflection Surfaces,' OPTICA ACTA, vol. 29, pp. 993-1009, 1982. [43] S. J. E. a. R. B. Richard A Soref, 'Silicon waveguided components for the long-wave infrared region,' JOURNAL OF OPTICS A, vol. 8, pp. 840-848, 2006. [44] Y. C. Z. L. L. Ma, N. Jiang, X. Lu, J. Shao, W. Lu, J. Ge, X. M. Ding, and X. Y. Hou, 'Wide-band “black silicon” based on porous silicon,' Applied Physics Letters, vol. 88, p. 171907, 2006. [45] D. H. R. a. G. M. Morris, 'Antireflection structured surfaces for the infrared spectral region,' APPLIED OPTICS, vol. 32, pp. 1154-1167, 1993. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/49503 | - |
| dc.description.abstract | The market share of organic light emitted diode (OLED) applications in screen fabrication has gradually increased recently. The main reason is because of the properties of self-emitting, low operation voltage, low cost, feasibility at large area fabrication and flexible substrate, which drew attentions of both researchers and industries.
The work in this thesis cooperated with the group leading by Prof. Hsin-Fei Meng and Prof. Hsiao-Wen Zan research team from National Chiao Tung University. In our previous works, we were able to fabricate a high performance space-charge-limited transistor (SCLT) with high on-off ratio, low operation voltage, and low leakage current. Our goal is to apply SCLT into a two-transistor one-capacitor (2T1C) circuit with large area. However, it needs to overcome the problems of large area nanoimprint and patterns design for 2T1C circuit. We have established an interference lithography system to fabricate large area nanopatterns in both 1-D and 2-D structure. A designed mask was also used to solve the problems of alignment and edge diffraction. Moreover, the property of nanoimprint lithography has an advantage of uniformity due to the replication of mold. The influence of each process to uniformity will be discussed. The research of anti-reflection structure at silicon cored fiber end face and splicing with commercial silica fiber were also studied due to our own fabrication of SCF. The purpose was to reduce the Fresnel reflection between air and silicon, and to enhance the output power. We think the application can be beneficial to the combination of traditional optical fiber system and integrated optics. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T11:31:50Z (GMT). No. of bitstreams: 1 ntu-105-R02941023-1.pdf: 6267565 bytes, checksum: 4f7c3d4e47ee9d5bf758b0f04853bd4f (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii Statement of Contributions v CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xiv Chapter 1 Motivation and Introduction 1 1-1 Motivation 1 1-2 Space-charge-limited transistors 3 1-3 Silicon cored fiber 7 1-4 Organization of the thesis 9 Chapter 2 Fabrication of Imprinted SCLT 10 2-1 Interference Lithography (IL) 10 2-1-1 Introduction to IL 10 2-1-3 Exposure dose and contrast 14 2-2 Nanoimprint Lithography 19 2-3 Fabrication processes of imprinted SCLT 21 Chapter 3 Formation of Large Area 10x10 cm2 Patterns by Using Interference Lithography 26 3-1 Single exposure stitching 26 3-1-1 Rectangular unit beam 26 3-1-2 DC zone 28 3-1-3 Patterns stitching 31 3-2 Double exposure stitching 33 3-2-1 Rotation error 33 3-2-2 3-D Position alignment by using Moiré pattern 34 3-2-3 Simulation of patterns stitching 37 3-2-4 Stitching design for 2T1C circuit and pattern observation 41 Chapter 4 Large Area SCLT Arrays Fabrication by Using Nanoimprint Lithography 44 4-1 Fabrication and measurement of SCLTs array by colloidal lithography 44 4-2 Fabrication of SCLTs array by nanoimprint lithography 47 4-2-1 Mold fabrication 47 4-2-2 PDMS replication 49 4-2-3 Large area imprint and strip off process 50 4-3 Measurement results 52 4-4 Discussion 58 Chapter 5 Reducing coupling loss between silicon cored fiber and glass fiber 61 5-1 Fabrication of nano structure on silicon wafer 61 5-1-1 KOH solution etching 61 5-1-2 Metal assisted chemical etching 64 5-1-3Measurement of reflectance 66 5-2 Fabrication of porous SCF end face and transmission measurement 71 5-3 Splicing a SCF and a glass fiber 78 Chapter 6 Conclusions and Future Works 81 6-1 Conclusions 81 6-2 Future works 82 References 85 Publication 91 | |
| dc.language.iso | en | |
| dc.subject | 抗反射結構 | zh_TW |
| dc.subject | 干涉微影 | zh_TW |
| dc.subject | 拼接 | zh_TW |
| dc.subject | 奈米壓印 | zh_TW |
| dc.subject | 空間電荷限制電晶體 | zh_TW |
| dc.subject | 矽核光纖 | zh_TW |
| dc.subject | interference lithography | en |
| dc.subject | anti-reflection structure | en |
| dc.subject | silicon cored fiber | en |
| dc.subject | space-charge-limited transistor | en |
| dc.subject | nanoimprint | en |
| dc.subject | stitching | en |
| dc.title | 奈米結構應用於大面積空間電荷限制電晶體以及矽核光纖耦合 | zh_TW |
| dc.title | Nano structures applied to large area space-charge-limited transistors and silicon cored fiber coupling | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 冉曉雯,孟心飛,黃建璋 | |
| dc.subject.keyword | 干涉微影,拼接,奈米壓印,空間電荷限制電晶體,矽核光纖,抗反射結構, | zh_TW |
| dc.subject.keyword | interference lithography,stitching,nanoimprint,space-charge-limited transistor,silicon cored fiber,anti-reflection structure, | en |
| dc.relation.page | 91 | |
| dc.identifier.doi | 10.6342/NTU201602959 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2016-08-17 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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