氧化鋅奈米線的蕭特基接觸

Abstract

在本篇論文中，主要是研究銦錫氧化物與氧化鋅奈米線的蕭特基接觸的各種光電性質。以熱蒸發法成功的在銦錫氧化物玻璃上合成出氧化鋅奈米線，並以脈衝雷射濺鍍法在氧化鋅奈米線上再鍍上一層銦錫氧化物薄膜。在掃描式電子顯微鏡的幫助下顯示合成出來的氧化鋅奈米線在方向、直徑與長度上有相當良好的均勻性。氧化鋅奈米線預先用攝氏70度的雙氧水浸泡，而不同的浸泡時間會呈現出不同的光電效果。銦錫氧化物薄膜與浸泡過雙氧水的氧化鋅奈米線呈現明顯的蕭特基接觸，藉由量測樣品的電流-電壓曲線，此蕭特基勢壘的理想係數、漏電流被推算出來。另外樣品在波長400nm以下的光電流也被量測到，而光電流的高峰界在380 nm到370 nm中間。

ZnO nanowires were grown by thermal evaporation of zinc in an Ar/O2 flow on ITO glass substrates without any catalyst. After treated the ZnO nanowires with hydrogen peroxide (H2O2) at 70℃, metallic contacts were made by depositing an ITO overlayer by pulse laser deposition (PLD). The diameter and length of the resulting nanowires were measured by scanning electronic microscope (SEM), and the crystallinity and orientation of the nanowires were analyzed by X-ray diffraction. The I-V curve and photocurrent of the ITO/ZnO nanowires/ITO samples were measured to evaluate their photodiode properties. The results indicate the H2O2 treatment is important to form the Schottky barrier, and the wavelength of the peak photoresponse lies between 370 nm and 380 nm.