適合電子束微影系統之高精密度奈米定位平台

Abstract

次世代微影技術中，電子束微影(E-beam Lithography ，EBL)目前被認為是最具潛力發展成為次世代半導體製程設備的技術，為改善EBL造成的臨近效應(Proximity Effect)、圖形扭曲(Distortion)，以及補償原有EBL載台誤差3~5 µm，提高平台的定位度，而設計了具有六個自由度的高精密度奈米定位平台。 本論文改裝JEOL JSM 7000F的EBL 載台，加入高精度奈米定位平台，由壓電致動器驅動，壓電致動器具有體積小、出力大、剛性佳等優點，然而遲滯效應會造成10％~15％的位移誤差量，為了減低遲滯效應對微影的影響，選擇PID控制器做為閉迴路控制，有良好的控制響應，將遲滯效應消除以便微影。有別於一般的EBL採用固定載台，E-beam去曝寫的型式，本論文採用固定E-beam，移動載台去曝寫(fixed beam lithography)，以不同於傳統軟體補償和路徑補償的方式去修正臨近效應，且可避免圖形扭曲，另外適用於長行程圖形的接合，以及38 nm小線寬的達成。

In the next generation lithography, electron beam lithography is regarded as the most potential lithography technology. In order to correct the proximity effect , pattern distortion, the displacement error of about 3~5 µm from the original stage and to increase the stage precision, a precision 6 degree-of-freedom motion stage for the scanning electron microscope (SEM) system is designed. Nano stage is integrated into the original stage of JEOL 7000F JSM SEM. Piezoelectric actuators are used in the nano stage because of its advantages including small size, high precision resolution and stiffness. However, the hysteresis causes large displacement errors. A PID controller is used as the closed loop control to reduce hysteresis effect, and the pattern is generated by moving the nano stage while keeping the E-beam fixed. A minimum line width of 38 nm, proximity correction, and large displacement pattern stitching are achieved.