p-i-n矽奈米線元件的成長及特性

Abstract

本篇論文成功的利用化學氣相沉積法(CVD)經由氣-液-固相 (VLS)的成長機 制,並且在成長過程中加上電場得到矽奈米線p-i-n 接面,論文首先探討和矽奈米線 長度與成長時間的關係,之後再從一系列的分析來了解矽奈米線的結構及電子特 性,並且在經由後段處理後使雜訊變小電性變佳,接著重複量測p-i-n 矽奈米線的電 子特性,最後再由靜電原子力顯微鏡(EFM)來定義所成長的矽奈米線的p 型,.i 型和 n 型的接面位置.

The electric-field directed growth of silicon nanowire (SiNWs) p-i-n junction was fabricated successfully by chemical vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system. In this thesis, the length of SiNWs as a function of growth time was first investigated. Then the electric and structure properties of the SiNWs were measured using a series of analysis tools. The growth mechanism and electrical characteristics of SiNWs p-i-n junction are investigated and explained. .the repeated I-V measurement of p-i-n junction SiNWs are also demonstrated. In the end, the electrostatic force microscopy (EFM) was used to define the position of p-I and i-n junctions in the SiNWs.