內凹角隅的晶格面蝕刻速率的量測方法

Abstract

本文主要是以內凹角隅可量測出蝕刻速率較慢的晶格面為主。文中討論濕式蝕刻速率理論，以二維蝕刻理論為中心，提出一套完整的實驗架構流程與量測蝕刻速率之方法，利用幾何方法來探討基本的蝕刻長度變化率與蝕刻速率的關係，藉由量測蝕刻面的長度變化率與夾角再搭配立體投影圖和沃夫座標圖的輔助，即可求得正確的蝕刻速率與晶格面的米勒指標。 在量測蝕刻速率實驗上，本文以（110）矽晶圓在KOH濃度40% 下進行實驗，並詳細的記錄晶格面的長度變化率與夾角，和實驗後量測計算得到的蝕刻速率與晶格面米勒指標，作為KOH蝕刻製程的資料庫。

The focus of this thesis is two dimensional etch theory, which use geometric method to treat the relationship between the basic of etch length rate and etch rate. The thesis develop a completed experimental process and measuring method of etch rate for concave corner lattice planes, which can predict collect etch rate and lattice plane’s miller indices by means of using stereogram and wulff net. On the basis of two dimensional etch theory, the experiment use（110）wafer and KOH solution in 40 % and 80℃ condition. The thesis accumulate experimental data for KOH etch process’s database.