請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4097
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Tzung-Han Tsai | en |
dc.contributor.author | 蔡宗翰 | zh_TW |
dc.date.accessioned | 2021-05-13T09:20:42Z | - |
dc.date.available | 2017-08-26 | |
dc.date.available | 2021-05-13T09:20:42Z | - |
dc.date.copyright | 2016-08-26 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-08-19 | |
dc.identifier.citation | [1] International Energy Agency, ”World Energy Outlook 2016”, http://www.worldenergyoutlook.org/.
[2] IHS Technology, “Silicon Carbide and Gallium Nitride Power Semiconductors-2014”,https://technology.ihs.com/521146/sic-gan-power-semiconductors-2016. [3] 宋宜駿 (2015)。科技政策觀點:節能趨勢下我國發展下世代電力元件之契機。 [4] 廖宸梓、胡智威、宣融 (2013)。新電子:大尺度磊晶技術突破,GaN-on-Si基板破裂問題有解。 [5] 賴姿侑(2013)。科技商情:氮化鎵(GaN)功率元件技術。 [6] Lester F. Eastman and U.K. Mishra, “The toughest transistor yet [GaN transistors],” IEEE SPECTRUM, vol. 39, pp. 28-33, May 2002. [7] UCLA Prof. Xie’s group, ”Towards Dislocation-free III-nitrides: Selective epitacy of GaN”, http://www.seas.ucla.edu/smrl/GaN.html. [8] O.Ambacher, J. Smart, J. R.Shealy, Weimann, K. Chu, N. G. Murphy, M. Schaff, W. JEastman, L. F. Dimitrov, R. Wittmer, L. Stutzmann, M. Riegar, J. W. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures” J.Appl. Phys, vol. 85, no. 6, Mar. 1999. [9] M. A. Khan, J. N. Kuznia, A. Bhattarai and D. T. Olson, “Metal Semiconductor Field Effect Transistor on single crystal GaN,” Appl. Phys. Lett, vol. 62, pp. 1786-1787, 1986 [10] W. B. Lanford , T. Tanaka , Y. Otoki and I. Adesida, 'Recessed-gate enhancement-mode GaN HEMT with high threshold voltage', Electron. Lett. vol. 8441, no. 7, pp.449-450 2005. [11] T. Oka and T. Nozawa, “AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications,” IEEE Electron Device Lett., vol. 29, no. 7, pp. 668-670, Jul. 2008. [12] Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, “High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,” IEEE Electron Device Lett., vol. 26, no. 7, pp. 435–437, Jul. 2005. [13] Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, “Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode,” IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2207–2215, Sep. 2006. [14] B. Zhang, S. Tan, J. Xu, Z. Dong, G. Yu, Y. Cai, L. Xue, H. Chen, K. Hou, D. Zhao, Y. Wang, S. Liu, and K. J. Chen, “5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing,” Electron. Lett., vol. 49, no. 3, pp. 221–222, Jan. 2013. [15] Z. Tang et al., “600-V normally off SiNx /AlGaN/GaN MIS-HEMT with large gate swing and low current collapse,” IEEE Electron Device Lett., vol. 34, no. 11, pp. 1373–1375, Nov. 2013. [16] Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, et al., “Gate injection transistor (GIT)—A normally-off AlGaN/GaN power transistor using conductivity modulation,” IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393–3399, Dec. 2007. [17] I. Hwang, H. Choi, J. Lee, H. Choi, J. Kim, J. Ha, et al., '1.6KV, 2.9 mΩ-cm2 Normally-off p-GaN HEMT Device', International Symposium on Power Semiconductor Devices and ICs, 2012. [18] L.-Y. Su, F. Lee, and J. J. Huang, “Enhancement-mode GaN-based highelectron mobility transistors on the Si substrate with a P-Type GaN cap layer,” IEEE Trans. Electron Devices, vol. 61, no. 2, pp. 460–465, Feb. 2014. [19] S. Karmalkar, M. S. Shur, G. Simin, and A. Khan, “Field-plate engineering for heterostructure field effect transistors,” IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2534–2540, Dec. 2005. [20] Steven C. Binari, P. B. Klein and Thomas E. Kazior, Proceedings of the IEEE, VOL. 90, NO. 6, JUNE 2002. [21] Rongming Chu, Chang Soo Suh, Man Hoi Wong, Nicholas Fichtenbaum, David Brown, Lee McCarthy, Stacia Keller, Feng Wu, James S. Speck, and Umesh K. Mishra, “Impact of CF4 Plasma Treatment on GaN,” Electron. Lett., vol. 49, no. 3, pp. 221–222, Jan. 2013. [22] R. M. Chu, C. S. Suh, M. H. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, J. S. Speck, and U. K. Mishra, “Impact of CF4 plasma treatment on GaN,” IEEE Electron Device Lett., vol. 28, no. 9, pp. 781–783, Apr. 2007. [23] D. A. Stocker, E. F. Schubert and J. M. Redwing, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett. 73, 2654 (1998). [24] Y. Hori, Z. Yatabe and T. Hashizume, “Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors,” J. Appl. Phys. 114, 244503 (2013). [25] Y. Z. Yue, Y. Hao, J. C. Zhang, J. Y. Ni, W. Mao, Q. Feng, and L. J. Liu, “AlGaN/GaN MOS-HEMT With HfO2 dielectric and interfacial passivation layer grown by atomic layer deposition,” IEEE Electron Device Lett., vol. 29, no. 8, pp. 838–840, Aug. 2008. [26] T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, “A study on current collapse in AlGaN/GaN HEMTs induced by bias stress,” IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2015–2020, Oct. 2003. [27] Lu, Bin, Omair Irfan Saadat, and Tomas Palacios. 'High-performance integrated dual-gate AlGaN/GaN enhancement-mode transistor.' IEEE Electron Device Letters 31.9 (2010): 990-992. [28] Park, Bong-Ryeol, et al. 'High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs.' IEEE Electron Device Letters 34.3 (2013): 354-356. [29] Hsieh, Ting-En, et al. 'Gate recessed quasi-normally OFF Al 2 O 3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer.' IEEE Electron Device Letters 35.7 (2014): 732-734. [30] Freedsman, Joseph J., et al. 'Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V).' Applied Physics Express 7.4 (2014): 041003. [31] Bajaj, Sanyam, et al. 'Simulation of Enhancement Mode GaN HEMTs with Threshold> 5 V using P-type Buffer.' arXiv preprint arXiv:1511.04438 (2015). [32] Buttari, D., et al. 'Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs.' High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on. IEEE, 2002. [33] Chiou, Ya-Lan, Li-Hsien Huang, and Ching-Ting Lee. 'Photoelectrochemical function in gate-recessed AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors.' IEEE Electron Device Letters 31.3 (2010): 183-185. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/4097 | - |
dc.description.abstract | 在這篇論文中我們進行了常關式氮化鋁鎵/氮化鎵高電子遷移率電晶體的製作,首先分別探討氟離子處理與閘極掘入製程對元件臨限電壓的偏移的影響,之後則結合氟離子處理與閘極掘入製程進行元件的製作,並利用熱退火處理的方式進行乾蝕刻後的表面修復,製作出來的元件臨限電壓約有2 V的正向偏移。
為了抑制閘極漏電流並使元件可以操作在更高的閘極偏壓下,我們利用氧化鋁做為閘極介電質,成功使閘極電流下降約104數量級,但由於離子轟擊造成的介面缺陷,閘極對通道的控制能力下降,臨限電壓大量的往負向偏移,為了降低介面缺陷,我們利用KOH稀釋溶液進行表面修復,並針對閘極掘入式金氧半高電子遷移率電晶體做探討。 為了製作出常關式元件,我們將氮化鋁鎵障壁層完全移除,並利用極低的蝕刻速率精準地控制蝕刻深度,製作出來特性最好的元件臨限電壓約為1 V,最大飽和電流密度約為285 mA/mm,同時我們利用電容-電壓及脈衝電流-電壓量測方法進行介面缺陷的分析,並比較二維電子氣通道和反轉層通道元件的差異。 | zh_TW |
dc.description.abstract | In this thesis, we focus on the fabrication of normally-off AlGaN/GaN high electron mobility transistor (HEMT). First of all, we discusse the effect of fluoride-based plasma treatment and gate recess process on the shift of threshold voltages of the device. Then, the device is fabricated with the combination of fluoride-based plasma treatment and recess-gate structure. A thermal annealing process is used to repair the surface after dry etch. The device shows positively threshold voltage shift of 2 V.
To reduce the gate leakage current and ensure that device can be biased at higher gate voltage, Al2O3 is used as gate dielectric and the gate current is decreased about four order of magnitudes. Interface trap emerges after ion bombardment, which reduces the gate-control-ability and makes threshold voltage shift toward negative seriously. In order to reduce interface traps, KOH diluent is used to passivate the surface and we focus on the fabrication of gate recess MOSHEMT. To fabricate normally-off devices, AlGaN barrier is fully-removed with very low etching rate that can precisely control the recess depth. Device with high performance shows threshold voltage of 1V and maximum drain current of 285 mA/mm. The C-V and pulse I-V measurement are used to analyze interface traps. And we compare the difference between two-dimensional electron gas (2DEG) channel devices and inversion channel devices. | en |
dc.description.provenance | Made available in DSpace on 2021-05-13T09:20:42Z (GMT). No. of bitstreams: 1 ntu-105-R03943112-1.pdf: 6717730 bytes, checksum: 1199ef92b985cefadfebf2f6ebbd2168 (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 目錄
誌謝 II 摘要 III Abstract IV 目錄 V 圖目錄 VIII 表目錄 XII 第1章 緒論 1 1.1 背景介紹 1 1.2 氮化鎵材料特性介紹 3 1.3 研究動機與論文概述 7 第2章 氮化鋁鎵/氮化鎵高電子遷移率電晶體之製程開發與不同製程下之特性探討 12 2.1 光罩線寬與結構設計 12 2.2 閘極堀入式與氟離子處理之高電子遷移率電晶體製作 14 2.2.1 電晶體磊晶結構與製程條件變化的介紹 14 2.2.2 電晶體製作流程 17 2.2.3 電晶體直流特性分析與討論 23 2.3 結合閘極掘入製程與氟離子處理製作之高電子遷移率電晶體 29 2.3.1 電晶體磊晶結構與製程條件變化的介紹 29 2.3.2 電晶體製作流程 32 2.3.3 電晶體直流特性分析與討論 37 第3章 氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之製程開發與不同製程下之特性探討 43 3.1 結合閘極堀入製程與氟離子處理之金氧半高電子遷移率電晶體製作 43 3.1.1 電晶體磊晶結構與製程條件變化的介紹 43 3.1.2 電晶體製作流程 47 3.1.3 電晶體直流特性分析與討論 51 3.2 閘極掘入式金氧半高電子遷移率電晶體製作與閘極區域溼蝕刻式表面修復 61 3.2.1 電晶體製程條件變化與製作流程 61 3.2.2 電晶體直流特性分析 66 第4章 常關式反轉層通道閘極掘入式氮化鋁鎵/氮化 鎵金氧半高電子遷移率電晶體之製作與介面缺陷分析 73 4.1 反轉層通道氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之製作 73 4.1.1 電晶體製程條件變化與製作流程 73 4.1.2 電晶體直流特性分析 78 4.2 反轉層通道氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之介面缺陷分析 83 4.2.1 電晶體氧化鋁/氮化鋁鎵介面缺陷捕捉/釋放電子造成之臨限電壓偏移 83 4.2.2 利用變頻電容-電壓量測與脈衝電流-電壓量測方法分析介面缺陷 89 第5章 結論與未來展望 98 參考文獻 100 | |
dc.language.iso | zh-TW | |
dc.title | 常關式氮化鎵/氮化鋁鎵金氧半高電子遷移率電晶體之製作與介面缺陷分析 | zh_TW |
dc.title | Fabrication of Normally-off AlGaN/GaN MOSHEMTs and Analysis of Interface Traps | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林浩雄(Hao-Hsiung Lin),吳育任(Yuh-Renn Wu),黃建璋(Jian-Jang Huang) | |
dc.subject.keyword | 常關式,高電子遷移率電晶體,臨限電壓,介面缺陷,反轉層通道, | zh_TW |
dc.subject.keyword | normally-off,HEMT,threshold voltages,interface traps,inversion channel, | en |
dc.relation.page | 104 | |
dc.identifier.doi | 10.6342/NTU201602995 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2016-08-20 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-1.pdf | 6.56 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。