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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 溫政彥(Cheng-Yen Wen) | |
| dc.contributor.author | Tzu-Hsien Shen | en |
| dc.contributor.author | 沈慈賢 | zh_TW |
| dc.date.accessioned | 2021-05-13T08:36:25Z | - |
| dc.date.available | 2016-08-25 | |
| dc.date.available | 2021-05-13T08:36:25Z | - |
| dc.date.copyright | 2016-08-25 | |
| dc.date.issued | 2016 | |
| dc.date.submitted | 2016-08-12 | |
| dc.identifier.citation | [1] L. Esaki, “New Phenomenon in Narrow Germanium P-N Junctions,” Physical Review 109, 603 (1958).
[2] Z. Alferov, “Double Heterostructure Lasers: Early Days and Future Perspectives,” IEEE Journal of Selected Topics in Quantum Electronics 6, 832 (2000). [3] G. L. Patton, J. H. Comfort, B. S. Meyerson et al., “75-Ghz Fr Sige-Base Heterojunction Bipolar-Transistors,” IEEE Electron Device Letters 11, 171 (1990). [4] S. K. Banerjee, L. F. Register, E. Tutuc, D. Reddy, and A. H. MacDonald, “Bilayer Pseudospin Field-Effect Transistor (Bisfet): A Proposed New Logic Device,” IEEE Electron Device Letters 30, 158 (2009). [5] J. C. Bean, “Strained-Layer Epitaxy of Germanium-Silicon Alloys,” Science 230, 127 (1985). [6] B. Jalali, M. Paniccia, and G. Reed, “Silicon Photonics,” IEEE Microwave Magazine 7, 58 (2006). [7] H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl, and A. Dimoulas, “Strain-Induced Changes to the Electronic Structure of Germanium,” Journal of Physics: Condensed Matter 24, 195802 (2012). [8] G. D. Watkins and J. W. Corbett, “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy,” Physical Review 138, A543 (1965). [9] R. Wagner and W. Ellis, “Vapor‐Liquid‐Solid Mechanism of Single Crystal Growth,” Applied Physics Letters 4, 89 (1964). [10] D. E. Perea, N. Li, R. M. Dickerson, A. Misra, and S. T. Picraux, “Controlling Heterojunction Abruptness in Vls-Grown Semiconductor Nanowires Via in Situ Catalyst Alloying,” Nano Letters 11, 3117 (2011). [11] Y. F. Zhang, Y. H. Tang, N. Wang et al., “Silicon Nanowires Prepared by Laser Ablation at High Temperature,” Applied Physics Letters 72, 1835 (1998). [12] P. Das Kanungo, A. Wolfsteller, N. D. Zakharov, P. Werner, and U. Gosele, “Enhanced Electrical Properties of Nominally Undoped Si/Sige Heterostructure Nanowires Grown by Molecular Beam Epitaxy,” Microelectronics Journal 40, 452 (2009). [13] A. T. Heitsch, D. D. Fanfair, H. Y. Tuan, and B. A. Korgel, “Solution-Liquid-Solid (Sls) Growth of Silicon Nanowires,” Journal of the American Chemical Society 130, 5436 (2008). [14] T. J. Trentler, K. M. Hickman, S. C. Goel et al., “Solution-Liquid-Solid Growth of Crystalline Iii-V Semiconductors - an Analogy to Vapor-Liquid-Solid Growth,” Science 270, 1791 (1995). [15] R. Q. Zhang, Y. Lifshitz, and S. T. Lee, “Oxide-Assisted Growth of Semiconducting Nanowires,” Advanced Materials 15, 635 (2003). [16] Y. Wu and P. Yang, “Direct Observation of Vapor-Liquid-Solid Nanowire Growth,” Journal of the American Chemical Society 123, 3165 (2001). [17] X. F. Duan and C. M. Lieber, “General Synthesis of Compound Semiconductor Nanowires,” Advanced Materials 12, 298 (2000). [18] I. Lombardi, A. I. Hochbaum, P. D. Yang, C. Carraro, and R. Maboudian, “Synthesis of High Density, Size-Controlled Si Nanowire Arrays Via Porous Anodic Alumina Mask,” Chemistry of Materials 18, 988 (2006). [19] J. C. Harmand, G. Patriarche, N. Pere-Laperne et al., “Analysis of Vapor-Liquid-Solid Mechanism in Au-Assisted Gaas Nanowire Growth,” Applied Physics Letters 87, (2005). [20] M. Yazawa, M. Koguchi, A. Muto, M. Ozawa, and K. Hiruma, “Effect of One Monolayer of Surface Gold Atoms on the Epitaxial-Growth of Inas Nanowhiskers,” Applied Physics Letters 61, 2051 (1992). [21] L. E. Greene, M. Law, J. Goldberger et al., “Low-Temperature Wafer-Scale Production of Zno Nanowire Arrays,” Angewandte Chemie-International Edition 42, 3031 (2003). [22] L. E. Greene, M. Law, D. H. Tan et al., “General Route to Vertical Zno Nanowire Arrays Using Textured Zno Seeds,” Nano Letters 5, 1231 (2005). [23] Z. J. Li, H. J. Li, X. L. Chen et al., “Large-Scale Synthesis of Crystalline Beta-Sic Nanowires,” Applied Physics a-Materials Science & Processing 76, 637 (2003). [24] C. Y. Wen, M. C. Reuter, J. Tersoff, E. A. Stach, and F. M. Ross, “Structure, Growth Kinetics, and Ledge Flow During Vapor-Solid-Solid Growth of Copper-Catalyzed Silicon Nanowires,” Nano Letters 10, 514 (2010). [25] S. Hofmann, R. Sharma, C. T. Wirth et al., “Ledge-Flow-Controlled Catalyst Interface Dynamics During Si Nanowire Growth,” Nature Materials 7, 372 (2008). [26] T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, “Ti-Catalyzed Si Nanowires by Chemical Vapor Deposition: Microscopy and Growth Mechanisms,” Journal of Applied Physics 89, 1008 (2001). [27] T. I. Kamins, R. S. Williams, Y. Chen, Y. L. Chang, and Y. A. Chang, “Chemical Vapor Deposition of Si Nanowires Nucleated by Tisi2 Islands on Si,” Applied Physics Letters 76, 562 (2000). [28] J. L. Lensch-Falk, E. R. Hemesath, D. E. Perea, and L. J. Lauhon, “Alternative Catalysts for Vss Growth of Silicon and Germanium Nanowires,” Journal of Materials Chemistry 19, 849 (2009). [29] C. Y. Wen, J. Tersoff, M. C. Reuter, E. A. Stach, and F. M. Ross, “Step-Flow Kinetics in Nanowire Growth,” Physical Review Letters 105, 195502 (2010). [30] E. Givargizov, “Fundamental Aspects of Vls Growth,” Journal of Crystal Growth 31, 20 (1975). [31] G. A. Bootsma and H. J. Gassen, “A Quantitative Study on the Growth of Silicon Whiskers from Silane and Germanium Whiskers from Germane,” Journal of Crystal Growth 10, 223 (1971). [32] V. Schmidt, S. Senz, and U. Gösele, “Diameter Dependence of the Growth Velocity of Silicon Nanowires Synthesized Via the Vapor-Liquid-Solid Mechanism,” Physical Review B 75, 045335 (2007). [33] D. Shakthivel and S. Raghavan, “Vapor-Liquid-Solid Growth of Si Nanowires: A Kinetic Analysis,” Journal of Applied Physics 112, 024317 (2012). [34] C. W. Pinion, D. P. Nenon, J. D. Christesen, and J. F. Cahoon, “Identifying Crystallization- and Incorporation-Limited Regimes During Vapor–Liquid–Solid Growth of Si Nanowires,” ACS nano 8, 6081 (2014). [35] V. G. Dubrovskii and N. V. Sibirev, “General Form of the Dependences of Nanowire Growth Rate on the Nanowire Radius,” Journal of Crystal Growth 304, 504 (2007). [36] S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, “Diameter-Independent Kinetics in the Vapor-Liquid-Solid Growth of Si Nanowires,” Physical Review Letters 96, 096105 (2006). [37] J. Weyher, “Some Notes on the Growth Kinetics and Morphology of Vls Silicon Crystals Grown with Platinum and Gold as Liquid-Forming Agents,” Journal of Crystal Growth 43, 235 (1978). [38] V. A. Nebol'sin, A. A. Shchetinin, A. A. Dolgachev, and V. V. Korneeva, “Effect of the Nature of the Metal Solvent on the Vapor-Liquid-Solid Growth Rate of Silicon Whiskers,” Inorganic Materials 41, 1256 (2005). [39] J. W. Dailey, J. Taraci, T. Clement et al., “Vapor-Liquid-Solid Growth of Germanium Nanostructures on Silicon,” Journal of Applied Physics 96, 7556 (2004). [40] T. Kamins, X. Li, R. S. Williams, and X. Liu, “Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates,” Nano Letters 4, 503 (2004). [41] D. Wang and H. Dai, “Low-Temperature Synthesis of Single-Crystal Germanium Nanowires by Chemical Vapor Deposition,” Angewandte Chemie International Edition 41, 4783 (2002). [42] J. H. Woodruff, J. B. Ratchford, I. A. Goldthorpe, P. C. McIntyre, and C. E. Chidsey, “Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal,” Nano Letters 7, 1637 (2007). [43] H. Jagannathan, M. Deal, Y. Nishi et al., “Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates,” Journal of Applied Physics 100, 024318 (2006). [44] S. Kodambaka, J. Tersoff, M. Reuter, and F. Ross, “Germanium Nanowire Growth Below the Eutectic Temperature,” Science 316, 729 (2007). [45] Y. Wu, R. Fan, and P. Yang, “Block-by-Block Growth of Single-Crystalline Si/Sige Superlattice Nanowires,” Nano Letters 2, 83 (2002). [46] J. M. Redwing, K.-K. Lew, T. E. Bogart et al., presented at the Integrated Optoelectronic Devices 2004, 2004 (unpublished). [47] T. E. Clark, P. Nimmatoori, K.-K. Lew et al., “Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor–Liquid–Solid Si/Si1−Xgex Heterostructure Nanowires,” Nano Letters 8, 1246 (2008). [48] C.-Y. Wen, M. C. Reuter, J. Bruley et al., “Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires,” Science 326, 1247 (2009). [49] C.-Y. Wen, M. C. Reuter, D. Su, E. A. Stach, and F. M. Ross, “Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires,” Nano Letters 15, 1654 (2015). [50] J. L. Murray, H. Okamoto, and T. B. Massalski, “The Al−Au (Aluminum-Gold) System,” Bulletin of Alloy Phase Diagrams 8, 20 (1987). [51] Y.-C. Chou, C.-Y. Wen, M. C. Reuter et al., “Controlling the Growth of Si/Ge Nanowires and Heterojunctions Using Silver–Gold Alloy Catalysts,” ACS nano 6, 6407 (2012). [52] N. Li, T. Y. Tan, and U. Gösele, “Transition Region Width of Nanowire Hetero- and Pn-Junctions Grown Using Vapor–Liquid–Solid Processes,” Applied Physics A 90, 591 (2008). [53] M. J. Hÿtch and A. M. Minor, “Observing and Measuring Strain in Nanostructures and Devices with Transmission Electron Microscopy,” MRS Bulletin 39, 138 (2014). [54] P. M. Jones, G. M. Rackham, and J. W. Steeds, “Higher Order Laue Zone Effects in Electron Diffraction and Their Use in Lattice Parameter Determination,” Proceedings of the Royal Society of London A: Mathematical, Physical and Engineering Sciences 354, 197 (1977). [55] A. Armigliato, R. Balboni, and S. Frabboni, “Improving Spatial Resolution of Convergent Beam Electron Diffraction Strain Mapping in Silicon Microstructures,” Applied Physics Letters 86, 063508 (2005). [56] M. Hytch, F. Houdellier, F. Hue, and E. Snoeck, “Nanoscale Holographic Interferometry for Strain Measurements in Electronic Devices,” Nature 453, 1086 (2008). [57] F. Uesugi, A. Hokazono, and S. Takeno, “Evaluation of Two-Dimensional Strain Distribution by Stem/Nbd,” Ultramicroscopy 111, 995 (2011). [58] A. Armigliato, S. Frabboni, and G. Gazzadi, “Electron Diffraction with Ten Nanometer Beam Size for Strain Analysis of Nanodevices,” Applied Physics Letters 93, 161906 (2008). [59] M. Hÿtch, E. Snoeck, and R. Kilaas, “Quantitative Measurement of Displacement and Strain Fields from Hrem Micrographs,” Ultramicroscopy 74, 131 (1998). [60] J. Li, C. Zhao, Y. Xing, S. Su, and B. Cheng, “Full-Field Strain Mapping at a Ge/Si Heterostructure Interface,” Materials 6, 2130 (2013). [61] L. Vincent, R. Boukhicha, N. Cherkashin et al., “Composition and Local Strain Mapping in Au-Catalyzed Axial Si/Ge Nanowires,” Nanotechnology 23, 395701 (2012). [62] D. B. Williams and C. B. Carter, Transmission Electron Microscope. (Springer, 2009). [63] S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, “Germanium Nanowire Growth Below the Eutectic Temperature,” Science 316, 729 (2007). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/3748 | - |
| dc.description.abstract | 介面分明且無缺陷的矽鍺異質介面具有許多優異的物理特性，使得此結構可以被應用於高效率半導體元件當中。然而薄膜結構中的矽鍺異質介面，往往會於交界處產生缺陷，使異質結構的電學與光學性質降低。將異質介面成長於奈米線中，可以大幅降低缺陷生成。本研究中，我們利用超高真空化學氣相沉積(ultra-high vacuum chemical vapor deposition, UHV-CVD)系統，以氣相-固相-固相(vapor-solid-solid, VSS)機制，成長出無介面缺陷、且異質介面明顯定義之矽鍺異質介面奈米線。高角度環形暗場掃描穿透式電子顯微鏡影像(high-angle annular dark-field scanning transmission electron microscope, HAADF-STEM)顯示，以金銀合金顆粒做為催化劑成長之矽-鍺-矽異質介面奈米線，其矽鍺異質介面處沒有觀察到缺陷的生成，且異質介面寬度大約為0.7 nm。幾何相位分析(geometric phase analysis, GPA)與電子能量損失光譜(electron energy-loss spectroscopy, EELS)結果均顯示，距離異質介面處數奈米內之矽晶格區有拉伸應變存在。為了後續元件應用性，我們試著將矽-鍺-矽異質介面奈米線成長於微米長度的矽奈米線上。此外，為了增加矽晶格區之應變，我們亦嘗試製備鍺-矽-鍺異質介面奈米線，發現預退火可以降低金奈米粒子之密度，使獨立、分散的鍺奈米線得以成長。 | zh_TW |
| dc.description.abstract | Formation of abrupt and defect-free Si/Ge heterostructures is of great importance for device applications. One of the advantages of this structure is that the lattice strain due to the 4.18% lattice mismatch between Si and Ge may be helpful to improve the optoelectronic properties of the two materials. However, when such heterojunctions are fabricated in thin-film structures, misfit dislocations are inevitably formed at the heterointerfaces, losing the desired strain state. One approach to get rid of this obstacle is by growing the heterojunction in nanowires, in which the strain can be relaxed elastically. The aim of this study is to grow nearly perfect Si/Ge heterojuncitons in nanowires with sufficient understanding of the controls of their morphology, composition, interfacial abruptness, and strain field near the interface. An ultra-high vacuum chemical vapor deposition (UHV-CVD) reactor is used for the nanowire growth, and it is equipped with in-situ metal evaporation systems for preparing the catalysts. In order to create compositionally abrupt Si/Ge interfaces, AgAu solid catalysts are used to fabricate Si/Ge/Si heterojunction nanowires via the vapor-solid-solid (VSS) mechanism. The high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) analysis shows that the Si/Ge heterointerface can be as sharp as merely 1 nm and no misfit dislocations are observed at the heterointerface; therefore, coherent strains are produced in the lattice near the interface and the strain distribution is quantitatively measured using the geometric phase analysis (GPA) method. The strain effect on the electronic property of Si is revealed in electron energy-loss spectroscopy (EELS) analysis – a slight shift of the loss energy is observed in the strained silicon lattice. For applications, the heterojunction nanowires should be long enough for device fabrication and we therefore use a two-step growth method using AgAu alloy catalysts: a long Si nanowires is grown via the vapor-liquid-solid (VLS) method and Si/Ge/Si heterojunctions are subsequently grown via the VSS method on the Si nanowires. In order to create a larger strain in Si lattice, we propose to grow Ge/Si/Ge heterojunction nanowires. Yet, the Ge nanowires can be grown using Au as the catalysts and it is found that the individual Ge nanowires are fabricated with the use of disperse AuSi eutectic droplets prepared by a pre-annealing treatment. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-13T08:36:25Z (GMT). No. of bitstreams: 1 ntu-105-R03527019-1.pdf: 4841480 bytes, checksum: 5348f398948401f476c2a7fa7a17a546 (MD5) Previous issue date: 2016 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii Abstract iii 目錄 v 圖目錄 vii 表目錄 xiii 第 1 章 前言 1 第 2 章 文獻回顧 3 2.1 半導體奈米線的成長 3 2.1.1 氣相-液相-固相(vapor-liquid-solid, VLS)機制 3 2.1.2 氣相-固相-固相(vapor-solid-solid, VSS)機制 5 2.1.3 奈米線成長動力學 7 2.1.4 鍺奈米線成長 10 2.2 矽鍺異質介面奈米線的成長 12 2.2.1 利用VLS成長機制成長矽鍺異質介面奈米線 12 2.2.2 利用VSS成長機制成長矽鍺異質介面奈米線 15 2.2.3 矽鍺異質介面寬度 18 2.3 穿透式電子顯微鏡之應變分析方法 20 2.3.1 聚束電子繞射分析 20 2.3.2 奈米電子束繞射分析技術 21 2.3.3 幾何相位分析技術 22 2.4 矽鍺異質介面奈米線之應變分析 25 2.4.1 矽鍺異質介面奈米線應變分析 25 第 3 章 實驗方法與步驟 28 3.1 奈米線成長方法與步驟 28 3.1.1 成長基板前處理 28 3.1.2 超高真空化學氣相沉積技術 28 3.1.3 金屬催化劑製備與選用 29 3.1.4 半導體奈米線成長步驟 30 3.1.5 矽鍺異質介面奈米線的成長步驟 30 3.2 異質介面奈米線的分析方法 32 3.2.1 掃描式電子顯微鏡(scanning electron microscopy, SEM) 32 3.2.2 穿透式電子顯微鏡(transmission electron microscopy, TEM) 32 3.2.3 掃描穿透式電子顯微鏡(scanning TEM, STEM) 33 3.2.4 能量分散光譜(energy dispersive spectroscopy, EDS) 33 3.2.5 應變分析-幾何相位分析技術(geometric phase analysis, GPA) 34 3.2.6 電子能量損失光譜分析(electron energy-loss spectroscopy, EELS) 35 第 4 章 結果與討論 36 4.1 VSS機制成長矽-鍺-矽異質介面奈米線 36 4.1.1 異質介面寬度分析 36 4.1.2 應變分析-幾何相位分析 38 4.1.3 電子能量損失光譜分析 40 4.2 兩階段成長矽鍺異質介面奈米線 41 4.2.1 第一階段以VLS機制催化成長矽奈米線 41 4.2.2 以VLS成長機制成長矽鍺異質介面奈米線 44 4.2.3 以兩段式VLS及VSS機制成長矽-鍺-矽異質介面奈米線 45 4.2.4 以兩段式VLS及VSS機制成長鍺-矽-鍺異質介面奈米線成長 46 4.3 鍺奈米線成長 49 4.3.1 成長溫度與鍍金量對鍺奈米線成長效應探討 49 4.3.2 鍺奈米線成長初始階段研究 50 4.3.3 預退火對鍺奈米線成長的影響 52 第 5 章 結論 55 參考文獻 56 | |
| dc.language.iso | zh-TW | |
| dc.subject | 電子能量損失光譜 | zh_TW |
| dc.subject | 矽鍺異質介面奈米線 | zh_TW |
| dc.subject | 氣相-固相-固相成長機制 | zh_TW |
| dc.subject | 氣相-液相-固相成長機 制 | zh_TW |
| dc.subject | 穿透式電子顯微鏡 | zh_TW |
| dc.subject | 幾何相位分析技術 | zh_TW |
| dc.subject | vapor-solid-solid (VSS) | en |
| dc.subject | electron energy-loss spectroscopy (EELS) | en |
| dc.subject | geometric phase analysis (GPA) | en |
| dc.subject | transmission electron microscopy (TEM) | en |
| dc.subject | Si/Ge heterojunction nanowires | en |
| dc.subject | vapor-liquid-solid (VLS) | en |
| dc.title | 半導體異質介面奈米線成長與分析 | zh_TW |
| dc.title | Growth and Analysis of Semiconductor Heterojunction Nanowires | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 104-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 顏鴻威,吳建霆,王迪彥,李紹先 | |
| dc.subject.keyword | 矽鍺異質介面奈米線,氣相-固相-固相成長機制,氣相-液相-固相成長機 制,穿透式電子顯微鏡,幾何相位分析技術,電子能量損失光譜, | zh_TW |
| dc.subject.keyword | Si/Ge heterojunction nanowires,vapor-liquid-solid (VLS),vapor-solid-solid (VSS),transmission electron microscopy (TEM),geometric phase analysis (GPA),electron energy-loss spectroscopy (EELS), | en |
| dc.relation.page | 59 | |
| dc.identifier.doi | 10.6342/NTU201602478 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2016-08-14 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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