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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 謝志誠 | |
dc.contributor.author | Ji-Jheng Shih | en |
dc.contributor.author | 施繼正 | zh_TW |
dc.date.accessioned | 2021-06-13T06:41:50Z | - |
dc.date.available | 2005-08-01 | |
dc.date.copyright | 2005-08-01 | |
dc.date.issued | 2005 | |
dc.date.submitted | 2005-08-01 | |
dc.identifier.citation | [01] 王湧鋒。2004。奈米直寫儀光學頭之奈米壓印製作方法的先導性研究。碩士論文。台北:台灣大學應用力學研究所
[02] Austin M.D. and Chou S.Y., 2002.Fabrication of 70 nm channel length polymer organic thin-film transistors using nanoimprint lithography. Apply. Phys. Lett. Vol.81 ,No.23,pp.4431-4433 [03] Beck M., M. Gracyzk, I. Maximox, E.-L. Sarwe, T.G.I. Ling, M. Keil, and L. Montelius,2002.Improving stamps for 10 nm level wafer scale nanoimprint lithography,Microelectronic Engineering 61-62,pp.441-448 [04] Bhardwaj J.,H. Asharf ,J. Hopkins,I. Johnston,S.McAuley,S. Hall,G. Nicholls,L. Atabo,A. Hynes,C. Welcj,A. Barker,B. Gunn,L. Lea,E. Guibarra, and S. Watcham,1999.Advanced in High Rate Silicon and Oxide Etching using ICP.SEMIMEMS99. [05] Chen Kuo-Shen, Arturo A. Ayón, Xin Zhang, and S. Mark Spearing,2002. Effect of Process Parameters on the Surface Morphology and Mechanical Performance of Silicon Structures After Deep Reactive Ion Etching (DRIE), Journal of Microelectromechnical Systems, vol. 11, No. 3,pp. 264-275. [06] Chou S.Y.,Krauss P.R.,and Renstrom P.J.,1995. Fabrication of nanoimprint Using sub-25 nm Imprint Lithography ,Apply. Phys. Lett. 67(21),pp.3114-3116 [07] Chou S. Y. , P. R. Krauss, and P. J. Renstrom, 1996.Nanoimprint lithography, J. Vac. Sci. Technol. B 14(6), pp. 4129-4133 [08] Chou S.Y.,Krauss P.R.,and Renstrom P.J.,1996. Imprint Lithography with 25-nanometer Resolution. Science, New Series, Vol. 272,No. 5258,pp.85-57 [09] Chou S.Y.,KraussP.R.,Wei Zhang,Lingjie Guo,and Lei Zhuang,1997. Sub-10 nm imprint lithography and applications ,J. Vac. Sci. Technol.B 15(6),pp. 2897-2904 [10] Chou S.Y., and Krauss P.R.,1997.Imprint Lithography with sub-10 nm Feature Size and High Throughput, Microelectronic Engineering 35pp.237-240 [11] Han Cao, Zhaoning Yu, Jian Wang,Jonas O. Tegenfeldt, Robert H. Austin,Erli Chen,Wei Wu and Stephen Y. Chou.,2002. Fabrication of 10 nm enclosed nanofluidic channels. Apply. Phys. Lett. Vol.81 ,No.1,pp.174-176 [12] Hirai Y., M. Fujiwara, T. Okuno, and Y. Tanaka, 2001. Study of the resist deformation in nanoimprint lithography, J. Vac. Sci. Technol. B 19(6), pp.2811-2815 [13] Hirai Y., S. Yoshida, N. Takagi, Y. Tanaka, H. Yabe, K. Sasaki,H. Sumitan and K. Yamamoto, 2003.High Aspect Pattern Fabrication by Nano Imprint Lithography Using Fine Diamond Mold, Jpn. J. Appl. Phys. Vol. 42 Part 1, No. 6B pp. 3863–3866 [14] Hiroshima H., S. Inouce, N. Kasahala, J. Taniguchi,I. Miyamoto and M. Komuro, 2002. Uniformity in Patterns Imprinted Using Photo-Curable Liquid Polymer, Jpn. J. Appl. Phys. Vol. 41, Part 1, No. 6B pp. 4173–4177 [15] Hiroshima H., M. Komuro, N. Kasashara, Y. Kurashima and J.Taniguchi, 2003. Elimination of Pattern Defects of Nanoimprint under Atmospheric Conditions, Jpn. J. Appl. Phys. Vol. 42 Part 1, No. 6B, pp. 3849–3853 [16] Jaszewski R.W., H. Schift, P. Gro¨ning, and G. Margaritondo,1997. Properties of thin anti-adhesive films used for replication of microstructures in polymers, Microelectron. Eng. 35,pp. 381–384. [17] Komuro M.,J. Taniguchi,S. Inoue,N. Kimura,Y. Tokano, H. Hiroshima , and S. Matsui, 2000.Imprint Characteristric by Photo-Induced Solidification of Liquid Polymer,Jpn. J. Appl. Phys. Vol.39,pp.7075-7079 [18] L J Guo, 2004.Recnet progress in nanoimprint technology and its applications,J. Phys. D: Apply. Phys. 37,pp.123-141 [19] Lebib A.,Y.Chen,F. Carcenac,E. Cambril,L,Manin,L.Couraud and H .Launois , 2000.Tri-layer for nanoimprinting lithography with an improved process latitude,Microelectronic Engineering 53,pp.175-178 [20] Lingjie Guo,Krauss P.R., and Chou S.Y.,1997. Nanoscale silicon field effect transistors fabricated using imprint lithography, Apply. Phys. Lett. 71(13),pp.1881-1883 [21] Martin C., L. Ressier,and J. P. Peyrade, 2003. Study of PMMA recoveries on micrometric patterns replicated by nano-imprint lithography, Physica E 17 ,pp523 – 525 [22] Matsui S., Y. Igaku, and H. Ishigaki, J. Fujita, M. Ishida, and Y. Ochiai, H. Namatsu, M. Komuro, 2003.Room-temperature nanoimprint and nanotransfer printing using hydrogensilsequioxane, J. Vac. Sci. Technol. B 21(2),pp.688-692 [23] Pfeiffer, K., F. Reuther, M. Fink, G. Gruetzner, P. Carlberg, I. Maximov, L. Montelius, J. Seekamp, S. Zankovych, C.M. Sotomayor-Torres, H. Schulz, and H.C. Scheer. 2003. A comparison of thermally and photochemically cross-linked polymers for nanoimprinting. Microelectronic Engineering 67-68, p266-273. [24] Taniguchi J., T. Kawasaki, Y. Tokano, Y. Kogo, I.MIYAMOTO,M. Komuro, H. Hiroshima, N. Sakai and K. Tada, 2002.Measurement of Adhesive Force Between Mold and Photocurable Resin in Imprint Technology, Jpn. J. Appl. Phys. Vol. 41Part 1, No. 6B, pp. 4194–4197 [25] Wei Zhang and Stephen Y. Chou., 2003. Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels. Appl. Phys. Lett., Vol. 83, No. 8, pp.1632-1634 [26] Zhaoning Yu, He Gao, Wei Wu, Haixiong Ge, and Stephen Y. Chou,2003. Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff. J. Vac. Sci. Technol. B 21(6),pp.2874-2877 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35132 | - |
dc.description.abstract | 奈米壓印(Nanoimprint lithography, NIL)是一種低成本且具有高生產力的非傳統微影技術。奈米印器(即母模)之製造上,將採用電子束微影技術及電感式耦合電漿乾蝕刻的製程進行,製造出高深寬比之母模結構。壓印設備系統上,將採用熱壓印技術,進行奈米結構之圖形轉移。 | zh_TW |
dc.description.abstract | The project is aimed at developing the mold fabrication and the imprinting recipe for nano-imprint (NIL). For fabrication of a nano-imprinting mold, the electron beam lithography and ICP(Inductively Coupled Plasma) dry etching will be mainly employed to structure the mold of high aspect ratio.
As for the nano-imprinting process, the hot-embossing will be employed, and the molds will be tested to form the nanopatterns, and then replicate the pattern to the polymer on the substrate. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T06:41:50Z (GMT). No. of bitstreams: 1 ntu-94-R92631010-1.pdf: 5244398 bytes, checksum: 00d0501d442eeaba6e920eeb39375dee (MD5) Previous issue date: 2005 | en |
dc.description.tableofcontents | 目錄
誌謝 i 中文摘要 ii 英文摘要 iii 目錄 iv 圖目錄 vi 表目錄 ix 第一章 前言 1 第二章 文獻探討 3 2.1 奈米壓印微影技術 3 2.1.1 熱壓型 3 2.1.2 光硬化型 10 2.2 母模材料之選用 12 2.3 矽晶圓之蝕刻 12 第三章 設備、材料、技術與方法 15 3.1 實驗設備 15 3.2 實驗材料 17 3.3 技術與方法 18 3.3.1 電子束微影 18 第四章 製程步驟及結果 21 4.1 製程步驟 21 4.1.1 矽母模之製作 21 4.1.2 以矽母模進行熱固化型奈米壓印 22 4.2 製程說明與結果 24 4.2.1母模製作 24 4.2.2熱固性奈米壓印 33 4.2.2.1 熱壓前未對母模進行表面處理 33 4.2.2.2 熱壓前對母模進行表面處理 37 4.2.2.2.1 離形層之附著 37 4.2.2.2.2 浸泡脫膜劑20分鐘之熱壓 39 4.2.2.2.3浸泡脫膜劑2小時之熱壓 45 4.2.2.2.4重新設計母模後的壓印 47 4.2.2.2.5 母模表面附著高分子層之移除 61 4.3 奈米壓印流程整理 63 第五章 結論與未來展望 64 參考文獻 65 | |
dc.language.iso | zh-TW | |
dc.title | 奈米壓印之印器與壓印 | zh_TW |
dc.title | Mold Fabrication and Nanoimprint | en |
dc.type | Thesis | |
dc.date.schoolyear | 93-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 施文彬,陳學禮 | |
dc.subject.keyword | 奈米壓印,微機電,奈米機電,光阻材料, | zh_TW |
dc.subject.keyword | Nanoimprint,Hot-embossing,Electron beam,Mold, | en |
dc.relation.page | 68 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2005-08-01 | |
dc.contributor.author-college | 生物資源暨農學院 | zh_TW |
dc.contributor.author-dept | 生物產業機電工程學研究所 | zh_TW |
顯示於系所單位: | 生物機電工程學系 |
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