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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33236
Title: | 定向成長矽奈米線之製程以及電性研究 The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires |
Authors: | Hao-Ming Huang 黃皓銘 |
Advisor: | 李嗣涔 |
Keyword: | 矽奈米線, silicon nanowires, |
Publication Year : | 2006 |
Degree: | 碩士 |
Abstract: | 本論文研究藉由低壓化學氣相沉積法,以外加電場影響的方式,來成長具有固定生長方向的矽奈米線(SiNWs),並進而藉由不同P型摻雜濃度來改變矽奈米線的電阻率,此外,利用四點量測的方式來分析矽奈米線的電阻率,提出矽奈米線應用於類比積體電路的可能性。 Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteristics of SiNWs with different doping concentrations are measured by four-points probe method. The possibility of application of SiNWs to the analog circuit is proposed. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33236 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 電子工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-95-1.pdf Restricted Access | 4.43 MB | Adobe PDF |
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