以微米小球顯影術及光致化學蝕刻法製作氮化鎵次微米三角柱結構

Abstract

氮化鎵材料因其在藍紫外光發光元件上的應用而廣受各界注意。隨著製程需求的提高，我們需要一個能簡便地在氮化鎵上製作次微米級結構的方法。本論文詳細介紹了微米小球顯影術及光致化學蝕法，並利用兩者及濕式蝕刻於氮化鎵上製作了次微米級的三角柱結構。且討論了氮化鎵被蝕刻後的晶格特性並將之與三角柱的晶格面比較。另外，我們以微光激發光系統對結構進行光學量測，並在論文中記載了這些量測的結果。

Because of the applications in UV-Blue light emitting devices, gallium nitride materials have drawn much attention. In order to reach more advanced processes, a simple and effective method to fabricate sub-micro triangular structures on GaN is needed. This thesis introduces microsphere lithography (MSL) and photoelectrochemical (PEC) etching, and describes how to fabricate sub-micro triangular rods by these methods. Crystallographic etching properties are inspected and compared with triangular rod’s facets. In addition, the rods are analyzed with optically pumped experiment apparatus and the results are discussed in this theis.