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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李嗣涔(Si-Chen Lee) | |
dc.contributor.author | Jiann-Kai Wang | en |
dc.contributor.author | 王建凱 | zh_TW |
dc.date.accessioned | 2021-06-13T02:20:36Z | - |
dc.date.available | 2007-02-01 | |
dc.date.copyright | 2007-02-01 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-01-30 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30910 | - |
dc.description.abstract | 本篇論文以VLS 機制於低壓化學氣相沈系統中成長矽奈米線(SiNW)。其次,在成長過程中外加電場來達到定位、定向的效果。最後,我們成功利用矽奈米線製備不摻雜和P 型場效電晶體,並量測矽奈米線場效電晶體的各種電性加以比較。 | zh_TW |
dc.description.abstract | The growth of silicon nanowires (SiNWs) with different diameters of Au
nanoparticles as catalyst has been systematically investigated via vapor-liquid-solid (VLS) mechanism using the low pressure chemical vapor deposition. The electric-field-directed growth SiNWs were developed to orient the SiNW to grow in a fixed direction and to the designed position by Coulomb electric force. The SiNWs FET was fabricated successfully. Single crystal undoped and p-type SiNWs have been prepared and characterized by current-voltage measurements. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T02:20:36Z (GMT). No. of bitstreams: 1 ntu-96-R93943136-1.pdf: 12159940 bytes, checksum: c3dfdd1255c4cbf5a7c348087c6d5621 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 摘要.............................................................................................................................. A
Abstract.......................................................................................................................... B Contents ..........................................................................................................................Ⅰ Figure Captions..............................................................................................................Ⅲ Lists of Table...................................................................................................................Ⅶ 1. Chapter 1 Introduction.......................................................................................... 1 2. Chapter 2 Experimental ................................................................................... 5 2.1. Deposition System .................................................................................. 5 2.2. Preparation............................................................................................. 12 2.3. Deposition Procedures .......................................................................... 12 2.4. Device fabrication .................................................................................. 13 2.5. Measurement Techniques...................................................................... 13 2.5.1. Current – Voltage Characteristics............................................... 13 2.5.2. Thickness Measurement of Buffered SiO2.................................... 14 3. Chapter 3 The Electric-Field –Directed Growth of Silicon Nanowire .......... 15 3.1. Vapor-Liquid-Solid (VLS) Mechanism................................................ 16 3.1.1. VLS- assisted silicon nanowire growth ....................................... 16 3.1.2. The role of the metal catalyst........................................................ 21 3.1.3. Electric-Field-Directed Growth of Silicon Nanowire ……… 21 3.2. Sample Preparation ............................................................................... 25 3.3. Results and Discussion........................................................................... 29 3.3.1. The growth of undoped SiNW from double-sides...................... 29 3.3.1.1. The electric-field effect on the growth of 20 nm diameter undoped SiNW with double-side structure ............................ 31 3.3.1.2. The electric-field effect on the growth of 10 and 50 nm diameter undoped SiNW with double-side structure ............ 35 3.3.2. The growth of undopedSiNW with single-side structure .......... 41 4. Chapter 4 The Fabrication of SiNW Field Effect Transistor.............................48 4.1. Sample Preparation .............................................................................. 51 4.2. Results and Discussion.......................................................................... 54 4.2.1. The SiNW FET with diameter 20nm and 50 nm......................... 54 4.2.1.1. The I-V characteristics of 20 nm diameter SiNW FET....... 54 4.2.1.2. The I-V characteristics of 50 nm diameter SiNW FET ...... 59 4.2.2. The 10 nm diameter SiNW FET with different channel length. ...................................................................................................... 63 4.2.2.1. The ID-VDS characteristics of FETs with gate bias as an independent parameter ............................................................ 63 4.2.2.2. The IDs-VG characteristics of SiNW FETs with drain bias as an independent parameter....... 66 4.2.3. The SiNW FET with boron-doped 50 nm diameter SiNW......... 69 4.2.3.1. The ID-VDS characteristics of boron-doped FETs with gate bias as an independent parameter . ....... 69 4.2.3.2. The IDS-VG characteristics of boron-doped FETs with drain bias as an independent parameter . ....... 69 5. Chapter 5 Conclusions...........................................................................................73 Reference.....................................................................................................................76 | |
dc.language.iso | zh-TW | |
dc.title | 矽奈米線的定向成長與場效電晶體的製作 | zh_TW |
dc.title | The Electric-Field-Directed Growth of SiNW and the Fabrication of SiNW Field Effect Transistor | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 劉致為,林浩雄 | |
dc.subject.keyword | 矽奈米線, | zh_TW |
dc.subject.keyword | SiNW, | en |
dc.relation.page | 90 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-01-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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