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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30328
Title: | 氮化鎵薄膜之應力分析 Stress Studies of GaN epifilms |
Authors: | Fu-Cing Wang 王甫青 |
Advisor: | 陳永芳 |
Keyword: | 氮化鎵,應力,應變,拉曼,光致螢光,陰極射線螢光, GaN,stress,strain,Raman,Photoluminescence,Cathodoluminescence, |
Publication Year : | 2007 |
Degree: | 碩士 |
Abstract: | In the first part of this thesis, we report the investigation of GaN epifilm by means of the cross-sectional micro-Raman scattering and cathodoluminescence (CL) spectra. We find the direct evidence for the existence of the residual thermal compressive strain along the growth direction in GaN epifilm. This result is useful for the understanding of the depth dependence of the physical properties of GaN epifilm. In the second part, we study patterned GaN grown on sapphire using the micro-Raman scattering and micro-Photoluminescence (PL) spectra. We find the direct evidence that the stress gradually relaxes when measurements approach to the stripe edge and a larger compressive stress relaxes in the smaller patterned stripe. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30328 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 物理學系 |
Files in This Item:
File | Size | Format | |
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ntu-96-1.pdf Restricted Access | 1.06 MB | Adobe PDF |
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