以射頻濺鍍和退火製程製備Bi1-xSbx薄膜

Abstract

本論文利用射頻濺鍍系統(RF Sputtering System)方法，在二氧化矽基材表面上製備Bi薄膜，接著在Bi薄膜上製備不同厚度的Sb，而形成比例不同的Bi/Sb雙層薄膜，後續讓Bi/Sb雙層薄膜經過退火處理使其形成不同比例的Bi1-xSbx合金，因為Bi與Sb同為五族的元素且有相同的晶體結構，經過X-Ray的分析與JCPD資料庫顯示Bi和Sb的晶格面，可以知道Bi/Sb雙層薄膜在退火之後是否有完全互相擴散形成合金，而高解析度場發射電子微探儀(FE-EPMA)的量測可知Bi1-xSbx的合金比例，我們可以由其中一個已知的Bi1-xSbx合金比例和晶面來知道其它Bi1-xSbx的合金比例是否正確，另外，Bi1-xSbx合金的電子結構和傳輸特性主要取決於的Bi1-xSbx合金中Sb值為多少，少量的Sb含量會具有半導體的特性，且在低溫時為良好的熱電致冷n型材料。在退火製程上使用RTA(Rapid Thermal Annealing)，實驗結果表示到達573K讓Bi/Sb雙層薄膜快速擴散後，(110)的晶面有偏移，而當降溫到不同溫度繼續退火時，隨著Sb含量的增加，表面的晶粒會有所不同，而測量面電阻與溫度的關係，出現半導體的特性。

In this thesis we use RF sputtering system, preparation of Bi film on the surface of the silica substrate, then prepare different thicknesses of Sb in Bi film, the formation of varying proportions of Bi / Sb bilayers, follow-up for Bi / Sb bilayers after annealing to form different proportions of Bi1-xSbx alloy, because Bi and Sb elements in the same group V and have the same crystal structure, after X-Ray analysis and crystal planes of JCPD database show that Bi / Sb bilayers after annealing have full mutual diffusion of alloy, high-resolution field emission electron micro-probe device (FE-EPMA) measurement shows that the proportion of Bi1-xSbx alloy, we can be one of the known Bi1-xSbx alloy and crystal planes to confirm the proportion of other alloy ratio of Bi1-xSbx. In addition, Bi1-xSbx alloy semimetal-semiconductor transition characteristics depend on the Sb values of Bi1-xSbx alloy, add a small amount of Sb content will have semiconductor properties, and good at low temperature for the n-type thermoelectric cooling materials. In the annealing process use RTA (Rapid Thermal Annealing), the results showed that when reaches 573K for Bi / Sb bilayers after annealing ,the (110) crystal plane is offset, when cooled to different temperatures to annealing, with the Sb content increases, the surface of the grain will be different, the measurement of surface resistance with temperature, appear the characteristics of semiconductor.