硫硒化鎘與硫化鎘薄膜之製備與特性分析

Abstract

本研究第一部份結合化學浴沉積法和硒蒸氣之退火處理，成功合成Cd(S,Se)薄膜。藉由XRD與EDS分析，探討不同硒化溫度與持溫時間對Se摻雜量的影響，並使用SEM與AFM分析來觀察其薄膜表面型態的變化，以及使用UV-visible探討Se摻雜量變化對能隙值的影響。本研究中經由硒化條件的改變可調整Se摻雜比例。所製備之薄膜以Hall effect量測皆為n-type之導電型態，且具有高載子濃度與低電阻率之特性。 本研究第二部分使用無氨化學浴沉積法。經由調整前驅物濃度、水浴溫度與前驅物比例，可製備平整緻密且具高透光性之CdS薄膜。研究中發現前驅物比例對表面顆粒大小和光學特性有明顯的影響。以無氨CBD法製備之CdS薄膜可應用於CIGS緩衝層製程，可避免傳統CBD法所留下的高濃度氨水廢液，在工業化量產時減少對人體以及環境的傷害。

Cd(S,Se) thin films were successfully synthesized on the glass substrates via the CBD method followed by a selenization process. The contents of selenium ions in Cd(S,Se) films were increased with increasing reaction temperatures and duration. The adjustable band gap values of Cd(S,Se) films were controlled with the selenium-ion contents. All the synthesized films exhibited the n-type characteristics via Hall effect measurement. The carrier concentration and the conductivity were significantly promoted with the selenization process. CdS thin films were successfully synthesized on the glass substrates via the CBD route without using ammonia. The obtained films were demonstrated to exhibit a high transmittance via UV-Vis analysis. The particle sizes on the surface of the prepared films were dominated by the condition of deposition process.