以光學方法評估氮化銦鎵/氮化鎵量子井之品質

Abstract

在本研究中，首先，我們以Ti:sapphire Laser 之二倍頻 (波長390nm)進行了temperature dependent photoluminescence (PL)、power dependent PL、temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL的量測，觀察不同樣品之量子井的特性並比較。 接著，我們以He-Cd Laser (波長325nm) 進行了temperature dependent photoluminescence (PL)、power dependent PL的實驗，比較其結果與以Ti:sapphire Laser 之二倍頻之量測的不同。最後 我們以JSM-6701F的 Scanning Electron Microscope (SEM) 做了cathodoluminescence (CL) 量測，以及以Ti:sapphire Laser 之二倍頻 (波長390nm) 進行了temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL之量測。

In this study, we first of all, demonstrated the results of temperature dependent photoluminescence (PL)’power dependent PL’temperature dependent time-resolved photoluminescence (TRPL) and power dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm). Observing the characteristics of quantum wells of of different samples. Second, we demonstrated the results of temperature dependent photoluminescence (PL) and power dependent PL with a He-Cd Laser (λ=325nm), and compared these results with which we did with the Ti: sapphire Laser. Finally, we did the cathodoluminescence (CL) measurement with the Scanning Electron Microscope JSM-6701F (SEM) , and the experiments of temperature dependent photoluminescence time-resolved (TRPL) and power measurement of dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm).