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標題: | 應用於5G NR 40 MHz封包追蹤技術之CMOS電源供應調變器 A CMOS Supply Modulator for 5G NR 40 MHz Envelope Tracking Technique |
作者: | Yu-Chen Lin 林育辰 |
指導教授: | 陳怡然 |
關鍵字: | 封包追蹤,電源供應調變器,功率放大器,切換式轉換器,線性調節器,混合式轉換器,遲滯控制,雙相位控制, Envelope tracking,Supply modulator,Power amplifier,Switching converter,Linear regulator,Hybrid converter,Hysteretic control,Two-phase control, |
出版年 : | 2019 |
學位: | 碩士 |
摘要: | 近年來,可攜式電子產品,諸如:智慧型手機,平板電腦等已相當普及,隨著無線多媒體影音與通訊軟體的蓬勃發展,使用者對這些可攜式裝置的使用需求日益增加,電力需求也隨之提高,而這些裝置都賴以電池做為供電來源,因此,電池續航力便成為可攜式產品供應市場與消費者們都相當在意的一項規格。
無線通訊系統中,例如:寬頻分碼多工(WCDMA)、長期演進技術(LTE)以及未來的新無線電(NR),射頻功率放大器為主要的功率消耗來源之一,且相較於過去行動通訊世代,第四代(4G)、第五代(5G)行動通訊技術的射頻功率放大器功率消耗又更加嚴重,因此,如何有效提升射頻功率放大器的效率是現今通訊技術中極為重要的一個議題。 封包追蹤(Envelope Tracking, ET)技術是近年來最廣為人知提升射頻功率放大器效率的方法之一,不同於傳統給予固定的供應電源,封包追蹤技術依據射頻訊號的封包變化情形,動態且適當地提供電壓予射頻功率放大器作為電源使用,此技術將有效提升射頻功率放大器的效率,進而提升可攜式裝置整體的效率,而能夠提供該動態電壓的電路稱為電源供應調變器(Supply Modulator, SM),本論文目的旨在提出可靠且高效能的電源供應調變器。 本論文設計的電源供應調變器架構是依據過去文獻中最廣為使用的線性與切換混合式電源供應調變器作為基底,並提出三大機制加入其中。其一是功率分配技術,本論文藉由適當功率分配,由切換頻率較高的切換式轉換器(效率相對低者)負責較少的功率,切換頻率較低的切換式轉換器(效率較高者)負責較多的功率,再由效率最差但響應能力最好的線性放大器負責功率佔比最低的高頻訊號成分,此分配可使整體效率提升;其二是遲滯雙相位控制技術,該技術具有比傳統架構更佳的迴轉率(Slew Rate)、較快的響應能力、低開關損失以及較小的電流漣波等優點,並且克服過去文獻中電壓轉換率有所限制的窘境;而第三個技術是迴轉率提升電路,可於切換級之迴轉率不足時迅速補充電流以降低線性級之電流漣波。 本論文使用0.25微米互補式金屬氧化物半導體(CMOS)製程實現,晶片面積為1.95×1.49 mm2。追蹤的訊號20/40 MHz LTE及40MHz 5G NR之封包,可操作的輸出電壓範圍為0.5 ~4 V,於輸入20 MHz LTE訊號時,電源供應調變器效率可達到的80.65 %,連接功率放大器量測後,封包追蹤功率放大器之整體系統(Eff.)最多可提升2.95 %,於輸入40 MHz LTE訊號時,效率可達78.92 %,連接功率放大器量測後,封包追蹤功率放大器之整體系統效率最多可提升3.01 %,而輸入40 MHz 5G NR訊號時,效率可達79.13 %,連接功率放大器量測後,封包追蹤功率放大器之整體系統效率最多可提升3.12 %。 Nowadays, handheld devices such as smartphone and tablet have been very popular. As the development of multimedia and communication Apps, people use their handheld devices more frequently. Hence consumers are more concerned about the battery life. The power loss of RF PA accounts for a great proportion of total power consumption of communication system. Moreover, compared to previous communication generations, power consumption of RF PA for fourth generation and fifth generation on handheld devices increases dramatically. Therefore, it is urgent to improve the efficiency of RF PA. Envelope tracking is one of the most widely known techniques to improve the efficiency of RF PAs. Instead of using a fixed supply voltage, the envelope tracking technique uses the supply modulator to provide the supply voltage dynamically according to the envelope of RF signals. The supply modulator is a circuit whose output node is designed to track a wideband signal envelope with high efficiency. This thesis presents a robust and high performance supply modulator. The prototype of the supply modulator proposed by this thesis is the hybrid supply modulator which combines the high efficiency advantage of a switching converter with the fast response advantage of a linear regulator. Three mechanisms are proposed to further optimize the conventional hybrid supply modulator. First is the power distribution technique, developed to increase the efficiency by properly arrange the power provided from every component of the supply modulator. Second is the hysteretic two-phase controlled technique, utilized to cancel current ripple, improve slew rate, and enhance the ability of high frequency response. Third is the slew rate (SR) enhancement circuit, which is adopted to decrease current ripple of linear stage when slew rate of switching stage is insufficient. The chip is fabricated in a 0.25 μm CMOS process, and its size is 1.94×1.49 mm2. The test signals are 20/40 MHz LTE envelope. The output voltage range is 0.5 ~4 V. When LTE 20 MHz 64 QAM signal is applied, the efficiency of the proposed supply modulator achieves 80.65 %, the overall efficiency of ETPA system can improve 2.95 %, when the LTE 40 MHz 64 QAM signal is applied, the peak efficiency of the proposed supply modulator is 78.92 % and the overall efficiency of ETPA system can increase by 3.01 %. In 5G NR measurement, when 5G NR 40 MHz 256 QAM signal is applied, the efficiency of the proposed supply modulator achieves 79.13 % and the overall efficiency of ETPA system can improve 3.12 %. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21125 |
DOI: | 10.6342/NTU201904439 |
全文授權: | 未授權 |
顯示於系所單位: | 電子工程學研究所 |
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