一個應用於K-band的低雜訊放大器

Abstract

隨著科技的進步，無線通訊在我們生活中扮演著不可或缺的角色，而可攜式裝置的普及也讓晶片的尺寸越來越重要，因此本論文針對現今人們經常使用的K-band無線接收機前端之低雜訊放大器，進行電路設計，以降低面積消耗為目標，利用Quasi-Transformer的架構特性，降低面積消耗，以達到一個應用於K-band無線接收機之低雜訊放大器。 本次設計使用台積電0.18微米製程，利用串聯兩級疊接放大器作為架構，在24 GHz可達到14dB增益以及3.9dB之雜訊指數，功率消耗15.66mW，電路面積為0.506mm2。

By the evolution of technology, digital data communication systems have become essential to our daily life. Wireless communication and portable devices become handy and brings the human being with more conveniences. People rely on the usage of portable devices and wireless communication more and more every day. Therefore, this thesis is going to design a low noise amplifier applied on K-band wireless communication. The goal for this design is to achieve small area to meet the demand of portable devices and wireless communication. Quasi-Transformer is utilized in this design to achieve the goal for small area. In the end, we accomplished a design of a low noise amplifier with Quasi-Transformer applied for K-band. This design is tape-out through 0.18μm technology by the Taiwan Semiconductor Manufacturing Company (TSMC). The two stage cascode topology is adopted for the amplifier design to achieve 14dB gain, noise figure of 3.9dB, 15.66mW of power, and occupies 0.506mm2 of area.