考慮背閘極偏壓效應之部份解離絕緣體上矽 金氧半元件關閉暫態分析

Abstract

本論文主要在研究一個考慮浮動基體效應的部分解離絕緣體上矽金氧半元件(PD SOI NMOS)，我們討論其背閘極偏壓效應(Back gate bias effect)對於部分解離絕緣體上矽N型元件(PD SOI NMOS)的關閉暫態影響。第一章我們介紹絕緣體上矽金氧半(PD SOI)元件以及其相關的特性和效應，並進一步對部分解離絕緣體上矽金氧半元件(PD SOI)做主要的探討。第二章則講解部分解離絕緣體上矽金氧半元件(PD SOI MOS)的電流傳導機制和浮動基體效應(Floating-body effect)所帶來的影響，然後介紹基礎的精簡電流模型以及基本的值流和元件關閉暫態分析。第三章我們把重點放在背閘極偏壓(back gate bias)對於元件直流及元件關閉暫態的影響，引入雙MOS架構的概念，進一步的考慮將背閘極偏壓(back gate bias)的電流模型做出修正。最後也利用二維模擬軟體 Medici來模擬元件直流及關閉暫態的行為來印證此修正行電流模型的精卻性。第四章為論文的總結與未來工作。

In this thesis, the transient analysis of partially depleted silicon-on-insulator (PD-SOI) NMOS devices considering back gate bias effect and floating-body effect is presented. Chapter 1 presents the introduction and special effects of PD-SOI NMOS devices. Chapter 2presentsthe current conduction mechanism and floating-body effect of PD-SOI NMOS devices. Then, we introduce the compact current model, DC analysis, and turn-off transient analysis on PD-SOI NMOS devices. In Chapter 3, we focus on the influence of back gate bias on DC and turn-off transient behaviors of PD-SOI NMOS devices. In addition, the concept of the MOS pair is introduced and the current model is modified considering back gate bias effect. At last, DC analysis and turn-off transient analysis are performed on the PD-SOI NMOS device by Medici, the 2-D simulation tool, to make sure that the modified model is correct. Chapter 4 is conclusions and future work.