三維記憶體的晶圓到晶圓堆疊演算法

Abstract

隨著積體電路技術的不斷發展，電路尺寸更小，性能更高，成本也變得越來越高。使用矽穿孔(TSV)技術的三維記憶體是一種新興的技術，相比平面積體電路有更高的性能和更低的功耗。然而三維記憶體的堆疊產量仍然是一個問題。 在這篇論文中，我們提出了一個改進自匈牙利方法(The Hungarian Method of Assignment)的新演算法對三維記憶體(3D Memory)進行晶圓到晶圓堆疊。實驗結果表明我們的算法可以在一個合理的時間內，給出較高的堆疊良率。

As the process technology continues to evolve, IC become smaller and high performance, and the cost become higher. A 3D-IC uses Through Silicon Via (TSV) is an emerging technology, higher performance, and lower power consumption compared to planar ICs. However stacking yield is a problem of 3D-IC. In this thesis, we propose a new algorithm using improved from the hungarian method of assignment on the three-dimensional memory for wafer to wafer stacking. Our results show that our algorithm can be a reasonable amount of time, given the higher stacking yield.