以雷射直寫技術製作相變化材料微結構之研究

Abstract

相變化材料（Phase-change material）可藉由外在施加能量而使其在結晶態或非晶態之間做可逆的轉換，因此被廣泛地應用於高密度記錄之光儲存、相變化記憶體與半導體元件中。 本實驗是以濺鍍方式製備非晶態之相變化材料鍺銻碲（Ge2Sb2Te5, GST）薄膜，再藉由雷射加工使GST薄膜轉態成為結晶態，所使用的脈衝雷射可調整雷射功率（2mW~20mW）以及雷射脈衝長度（100ns~1500ns），藉由雷射改變製作不同類型的紀錄點，最後再以導電式原子力顯微儀（Conductive atomic force microscopy, C-AFM）以及光學顯微量測系統對紀錄點進行表面形貌、導電性以及光學性質之研究。 同時以雷射轉印術進行GST質量轉移，以非晶態的GST薄膜作為母版，玻璃基板作為母版，利用雷射聚焦於GST薄膜上，使其熔融並轉印至子版，觀察其轉印結構之製成穩定度以及結構均勻度。

Phase-change materials are used in rewritable optical disks and phase-change electronic memories. The application of phase-change materials are due to the ease and reversibility of the phase-transition between amorphous and crystalline state. Amorphous thin films of Ge2Sb2Te5, sputter-deposited on a thin-film gold electrode, are investigated to understanding the local electrical conductivity under the influence of focused laser beam. The various laser power (2.0mW~20mW) and pulse duration (100ns~1500ns) used in writing recorded marks.The local conductivity of recorded marks and crystalline line can be investigated by a high-resolution and high-sensitivity of conductive atomic force microscopy (C-AFM). Laser-induced forward transfer (LIFT) technique is a high-throughput fabrication method. Using the femtosecond laser pulses focused on a thin film of Ge2Sb2Te5 phase-change material, and transfer the illuminated material to a nearby substrate.