深紫外光隨機雷射殺菌

Abstract

近來，常規抗生素治療對許多抗藥性細菌的出現無效的現象越來越多，導致了新型有效殺菌技術的發展。具有高同調性，高方向性，單色和高強度等特點的紫外雷射是理想的殺菌光源。然而，雷射受到其固有的不利因素限制，例如高方向性，需要精細的製造以及雷射光斑。在這裡，深紫外光隨機雷射（DUV-RL）是通過將AlGaN多層量子阱（MQW）和 鋁納米粒子用作增益介質和等離子體散射中心來實現的。我們為首次隨機雷射殺菌提供了驗證，並且通過在微生物革蘭氏陰性細菌（大腸桿菌）上照射此光源來檢查深紫外光隨機雷射處理的結果。為了進一步利用DUV-RL處理的功能，本研究證明了該處理的一般性以及使用不同角度照射下的隨機雷射殺菌效率。最重要的是，期望在消毒場所應用隨機雷射系統能成功滿足當前雷射治療的空白，並為滅菌提供另一種選擇。

Recently, the ineffectiveness of conventional antibiotic treatments against the emergence of multidrug-resistant bacteria induces the development of novel effective disinfection technologies. Ultraviolet lasers, with several features, including high coherence, high directionality, monochromatic, and high intensity were the ideal candidate light source for disinfection; however, lasers are restricted by its inherent detriments such as high directionality, meticulous manufacturing, and the laser speckles. Here, the deep-ultraviolet random laser (DUV-RL) is realized by applying AlGaN Multiple Quantum wells (MQWs) and aluminum nanoparticles as the gain medium and plasmonic scattering centers. We provide proof of concept for the first random laser disinfection, and the results of this DUV-RL treatment are examined by implement this light source on model microbial strain-gram negative bacteria (Escherichia coli). To further exploit the functionality of the DUV-RL treatment, the generality of the treatment, and the disinfection efficiency of random laser treatment with different angle illumination are demonstrated in this study. Above all, it is expected that the success of applying random laser systems on disinfection arena can fulfill the empty piece of current laser treatment and offers another choice to inactivate the bacteria.