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標題: | SU8光阻結構於高電阻溫度係數材料細胞色素C微輻射感測器之研究 Using SU-8 Photoresist Structure and Cytochrome C Thin Film Sensing Material for Microbolometer |
作者: | Jian-Lun Lai 賴建綸 |
指導教授: | 蘇國棟(Guo-Dung J. Su) |
關鍵字: | 微輻射感測器,SU8,高溫度電阻係數,細胞色素C,熱影像儀, Infrared Thermal Imager,Microbolometer,SU8,High Temperature Coefficient of Resistance (TCR),Cytochrome c Thin Film, |
出版年 : | 2012 |
學位: | 碩士 |
摘要: | 紅外線熱影像儀在軍事運用和商業運上越來越重要,紅外線熱影像儀可以應用在熱感測相機、工業監測、車用應用、火災偵測、醫療照護、以及夜間監視等運用。在紅外線熱影像儀中,熱阻式微輻射感測器microbolometer具有低成本、輕便、以及不須致冷器等優點。近年來的效能改善已使其漸漸地可以應用於實際的市場上,使其在這個領域上的重要性越來越高。紅外線熱影像儀是由紅外線光學鏡頭系統、焦平面陣列感測元件、信號讀取電子電路以及顯像裝置所構成。其中最為重要的部分焦平面陣列感測元件(FPA)是我們研究的主要目標。熱阻式微輻射感測器的焦平面陣列感測元件的效能主要由感測材料的靈敏度以及支撐感測材料的絕熱結構所決定。在這篇論文中,我們利用了曝光劑量法和掀舉法成功地使用SU8光阻建立了支撐感測材料大小為50μm* 50μm高為45μm及10μm的高絕熱結構,取代了原有製程較為困難且費用較高的氮化矽絕熱結構。此結構的填滿因子接近百分之百。我們也探究了光罩II的使用劑量,曝後烤時間以及顯影時間所需的可靠參數,降低SU-8的膜發生扭曲或是黏在基板上的機率。我們相信這些研究成果不僅可以使用在為輻射感測器中,也會對未來使用SU-8做其他高絕熱系統結構的人產生很大的幫助。我們使用高溫度電阻係數感測材料—細胞色素C薄膜作為感測材料。我們成功地建立了整個感測元件的製程,並以此量測出在這結構上的電阻對溫度的變化,取得了高溫度電阻係數值。整個結構的熱導值為6.681*10-6W/K,我們量測到的TCR為18%/K到25.7%/K。我們希望以此方法可以提供一個全新的低成本且高效能的熱阻式微輻射感測器。 Infrared thermal imager is an increasingly important device in the military use and commercial operation. The infrared thermal imager can be used in thermal sensing cameras, industrial monitoring, automotive applications, firefighting, medical care, nighttime surveillance etc. Microbolometer, one of the most important infrared thermal sensing cameras, has the advantages of low-cost, lightweight, and uncooled. In recent years, because of performance improvement, microbolometer can be gradually applied to actual commercial applications. These reasons make microbolometer become more and more important in this area. The microbolometer is composed of the infrared optical lens system, focal plane array (FPA), readout integrated circuit (ROIC), and imaging display. Because of the importance of focal plane array (FPA), our research focuses on it. Microbolometer generates the signals with the resistance changed by temperature difference. The efficiency of focal plane array is mainly determined by the sensitivity of the sensor material and the thermal insulation of the supporting structure. In this thesis, we used the exposure dose method and lift-off method to create 50μm* 50μm SU8 photoresist supporting structure for high thermal insulation. This structure’s fill factor is close to 100%. We successfully We successfully made SU-8 desk-like structure with different height, which are 45μm and 10μm, and explored how the mask II exposure time, post-exposure baking time, and developing time to affect SU-8 desktop membrane, which should contain no distortion and stiction. That will be helpful for other people who want to create SU-8 photoresisit high thermal insulation structure. Our SU8 photoresist insulation structure fabrication process is much easier and cheaper than present SiNx fabrication process. We used high-temperature coefficient of resistance (TCR) sensor material—Cytochrome c thin film as a sensing material. We have successfully established the fabrication process for the sensing pixel, and measured the high temperature coefficient of resistance in this new structure. The thermal conductance is 6.681*10-6 W/K, the TCR we measured is from 18%/K to 25.7%/K. We hope that this method can become a new solution for low-cost and high-efficiency microbolometer. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/15774 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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