AlGaInP紅光µLED透過側壁水蒸氣氧化緩解尺寸相關的效率衰退行為之分析

Abstract

本論文研究了側壁蒸汽氧化對不同尺寸（100 × 100 μm2 到 5 × 5 μm2）的 AlGaInP 紅光微型發光二極體之性能影響。透過室溫與低溫變溫量測，我們證實了適當的側壁氧化能同時優化光萃取效率（LEE）與內部量子效率（IQE），並有效抑制非輻射複合。針對氧化所引起的效應，本研究修正了 ABC 模型中的載子密度（n），並利用差分進化演算法更精準的提取出複合係數，成功實現了僅 11,061 cm/s 的極低表面複合速度。此外，變溫分析更進一步說明了低溫下的載子複合機制。這些研究成果可作為未來高解析度AlGaInP µLED顯示器製程優化之參考依據。

This thesis investigates the influence of sidewall steam oxidation on the performance of AlGaInP red micro-light-emitting diodes (μLEDs) with varying sizes ranging from 100 × 100 μm2 to 5 × 5 μm2. Through characterizations conducted under both room and cryogenic temperatures, we demonstrate that appropriate sidewall oxidation effectively upgrades both light extraction efficiency (LEE) and internal quantum efficiency (IQE) while successfully suppressing non-radiative recombination. Accounting for the effects induced by oxidation, this work critically rectifies the carrier density (n) within the ABC modeling framework. By employing a Differential Evolution algorithm, the recombination coefficients were precisely extracted, achieving a record-low surface recombination velocity (vs) of 11,061 cm/s. Furthermore, temperature-dependent analysis further elucidates the carrier recombination mechanisms at low temperatures. These findings serve as an important basis for process optimization in future high-resolution AlGaInP μLED displays.