斜角蒸鍍功能性透明導電多層膜之研究

Abstract

本研究利用斜角蒸鍍技術（Glancing Angle Deposition, GLAD）製備氧化銦錫（Indium Tin Oxide, ITO）薄膜，探討不同沉積角度對薄膜光學與電性質的影響。藉由調整基板傾斜角，可有效改變薄膜的孔隙率與結構形貌，進而調控其折射率與導電特性。實驗中分別於0°至80°角度下沉積ITO薄膜，並進行光譜分析、霍爾效應量測及電子顯微鏡觀察，結果顯示薄膜折射率隨傾斜角度增加而下降，導電性亦隨之降低。 進一步，本研究應用此特性設計並製備分佈式布拉格反射器（Distributed Bragg Reflector, DBR）多層膜結構，以達成可見光與紫外光選擇性反射之功能。結果顯示，以0 ˚/80 ˚斜角沉積組合製備之DBR結構在560 nm與370 nm波長處皆可展現選折性反射特性，370nm波段選擇性反射之DBR薄膜具備抗UV與高透明性雙重特性。此技術展示出利用單一材料即可實現功能性導電多層膜的潛力，為光電元件提供新穎製程與設計方向。

In this study, Indium Tin Oxide (ITO) thin films were fabricated using Glancing Angle Deposition (GLAD) to investigate how varying deposition angles affect their optical and electrical properties. By adjusting the substrate tilt angle, the porosity and morphology of the films could be controlled, thereby tuning the refractive index and conductivity. ITO thin films were deposited at tilt angles ranging from 0 ˚ to 80 ˚, and their characteristics were analyzed through spectroscopic measurements, Hall effect analysis, and electron microscopy. The results show that the refractive index and electrical conductivity decrease with increasing the deposition angle. Furthermore, this study applied the angle-dependent refractive index of ITO films to design and fabricate Distributed Bragg Reflector (DBR) multilayer structures with optical reflectivity in the selected visible and ultraviolet spectral ranges. The ITO DBR structures fabricated using combine of 0 ˚ /80 ˚ tilting angle exhibited selective reflection at target wavelengths around 560 nm and 370 nm. Achieving both UV shielding and high optical transparency. This work demonstrates the potential of GLAD to create functional conductive multilayer films from a single material, offering a novel fabrication and design approach for optoelectronic devices.