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  1. NTU Theses and Dissertations Repository

Browsing by Advisor Hao-Hsiung Lin

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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Showing results 1 to 16 of 16
Publication Year TitleAuthor(s)Department
2025Au/Bi/p-Si蕭基接面變溫I-V及C-V特性研究
Studies on Temperature-dependent I-V and C-V Characteristics of Au/Bi/p-Si Schottky Junction
王莘瑜; Hsin-Yu Wang元件材料與異質整合學位學程
2024GaAsBi / GaAs奈米結構的成長與特性分析
Growth and Characterization of GaAsBi/GaAs Nanostructures
張世喆; Shi-Zhe Zhang光電工程學研究所
2023SAGCM雪崩式光偵測二極體增益分析與提前崩潰改善之模擬
Gain Analysis of SAGCM Avalanche Photodetectors and Simulation of Premature Breakdown Elimination
陳昱鈞; Yu-Chun Chen電子工程學研究所
2024利用查表法之無除法器NLMS適應性濾波器實現
A dividerless NLMS adaptive filter design with the lookup-table method
李品儀; Ping-Yi Lee電子工程學研究所
2022應變鉍薄膜的結構特性
Structural Properties of Strained Bismuth Thin Films
吳佳軒; Chia-Hsuan Wu電子工程學研究所
2022應變鉍薄膜的結構特性
Structural Properties of Strained Bismuth Thin Films
吳佳軒; Chia-Hsuan Wu電子工程學研究所
2024考慮薛丁格和帕松方程式聯立解之 Au/Bi/Si金屬半金屬半導體接面特性研究
Studies on Au/Bi/Si metal-semimetal-semiconductor junction by solving Schrödinger and Poisson equation simultaneously
毛昭竣; Chao-Chun Mao電子工程學研究所
2025藉由多層石墨烯工藝優化二硫化鉬電晶體之特性
Performance Enhancement of Molybdenum Disulfide Transistors via Multilayer Graphene techniques
陳奕臣; Yi-Chen Chen電子工程學研究所
2025重摻雜碳的GaAsBi霍爾效應及光致發光特性分析
Characterization of Heavily Carbon-Doped GaAsBi: Hall Effect and Photoluminescence Analysis
郭晏廷; Yen-Ting Kuo電子工程學研究所
2025量子侷限效應與溫度對 Bi/p-Si蕭基接面能障的調變研究
Investigation of Bi/p-Si Schottky Barrier Height Modulation Induced by Quantum Confinement and Temperature
許逸翔; Yi-Hsiang Hsu光電工程學研究所
2022鉍奈米線的製作與其傳導特性研究
Fabrication and transport property characterization of bismuth nanowires
謝依珊; Yi-Shan Sie光電工程學研究所
2022鉍奈米線的製作與其傳導特性研究
Fabrication and transport property characterization of bismuth nanowires
謝依珊; Yi-Shan Sie光電工程學研究所
2024鉍奈米線陣列的氦離子束微影製備與其能隙分析
Properties of Bismuth Nanowire Arrays Prepared by Helium Ion Beam Lithography
蔡連晉; Lien-Chin Tsai光電工程學研究所
2024鉍磊晶薄膜以機械轉印法轉貼前後的特性比較
Properties comparison of Bismuth thin films before and after mechanical transfer
翁康榮; Kang-Rong Weng電子工程學研究所
2024鉍背閘極電晶體製作與特性研究
Fabrication and properties of Bismuth back-gate transistor
許志瑋; CHIH-WEI HSU電子工程學研究所
2025鉍薄膜於 Si(111) 基板上的類凡德瓦磊晶行為與奈米線的量子侷限效應研究
Study on Quasi–van der Waals Epitaxy of Bismuth Thin Films on Si(111) and Quantum Confinement Effects in Bismuth Nanowires
周結; Chieh Chou電子工程學研究所
Showing results 1 to 16 of 16
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