請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91251
標題: | 免用微影技術製作的氮化鎵奈米光柵結構內量子點發光、福斯特共振能量轉移與表面電漿子耦合隨偏振變化的行為 Polarization-dependent Behaviors of Quantum-dot Emission, Förster Resonance Energy Transfer, Surface Plasmon Coupling in Lithography-free GaN Nano-grating Structures |
作者: | 馮璽宇 Hsi-Yu Feng |
指導教授: | 楊志忠 Chih-Chung Yang |
關鍵字: | 氮化鎵,奈米光柵,量子點,福斯特共振能量轉移,表面電漿子耦合, Polarization-dependent Behaviors,Quantum-dot Emission,Förster Resonance Energy Transfer,Surface Plasmon Coupling,GaN Nano-grating Structures, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 我們設計氮化鎵磊晶結構和長條形台階陣列,經由電化學蝕刻可在整片樣品上製成次表面定向的孔洞結構。在去除氮化鎵覆蓋層後,我們可獲得台狀上具有固定延伸方向的表面週期性溝槽,這就實現了不必使用任何奈米微影製程,卻可得到週期小於100奈米的深度光柵。我們利用滴塗方法可將膠體量子點和化學合成的銀奈米顆粒塞入溝槽內,以此來展現其隨偏振變化的光學特性。基於穿透、連續光致發螢光和時間分辨光致發螢光測量,我們研究隨偏振變化的表面電漿子共振及耦合、福斯特共振能量轉移和量子點發光行為。當激發偏振垂直於溝槽方向時,量子點發光和表面電漿子耦合增強,然而福斯特共振能量轉移效率降低。當激發偏振垂直於溝槽方向時,整體光色轉換效率較高。 Subsurface oriented pores in a GaN layer are first formed through an electrochemical etching process by carefully designing the epitaxial structure and the geometry of a stripe mesa array. The, after removing a GaN capping layer, surface oriented trenches of a fixed extension direction on the mesas are implemented to achieve a deep grating of sub-100 nm in period without using any nano-lithography process. By drop-casting colloidal quantum dots (QDs) and chemically synthesized Ag nanoparticles (NPs) onto the surface of such a sample, they can settle into the trenches for showing their polarization-dependent optical properties. Polarization-dependent surface plasmon (SP) resonance and coupling, Förster resonance energy transfer (FRET), and QD emission are studied based on the measurements of transmission, continuous photoluminescence (PL) and time-resolved PL spectroscopies. When the excitation polarization is perpendicular to the trench orientation, QD emission and SP coupling are stronger. However, the FRET efficiency is lower. The overall color conversion efficiency is higher when the excitation polarization is perpendicular to the trench orientation. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91251 |
DOI: | 10.6342/NTU202304307 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 光電工程學研究所 |
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