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標題: | 製程條件對於微流道中化學鎳沉積之影響 Effects of Plating Conditions on Electroless Ni-P Plating in the Microchannel |
作者: | Ying-Hsuan Chen 陳穎暄 |
指導教授: | 高振宏(C. -Robert Kao) |
關鍵字: | 化學鍍鎳,微流道,流場模擬, Electroless Ni-P plating,Microchannel,Flow field simulation, |
出版年 : | 2018 |
學位: | 碩士 |
摘要: | 三維積體電路(3D-IC)被視為是半導體產業延續摩爾定律發展的其中一種方式。在追求體積縮小的趨勢下,使用焊錫接點在三維積體電路的應用將面臨許多可靠度的問題。因此,利用銅柱與銅柱接合的方式已越來越受到關注。
其中,使用化學鍍鎳做銅與銅接合具有低溫低壓的製程優勢。然而在極小的晶片與晶片間距,鍍液變得難以進入到內部的接合點,因此我們結合微流道的使用,將試片封於密閉的微流道內,再利用幫浦推動鍍液來確保鍍液順利流過接合點。然而目前對於微流道內製成參數如何影響化學鍍上鍍結果仍有許多的未知,因此,本研究旨在透過改變試片圖樣間距、圖樣排列方式以及通入流速的不同,對化學鍍鎳於微流道內上鍍的現象作了解。 實驗結果顯示,改變流速會影響反應物濃度的分佈,進而造成鍍率呈現不同趨勢的變化。而整體上鍍情形會受到反應過程中的副產物氫氣大幅干擾,使得試片出現不均勻上鍍的結果。我們發現,當圖樣間距縮小或是圖樣垂直於流體流入方向排列或是在低流速的條件下,皆容易使氣泡卡在試片內部。根據反應過程的錄影顯示,當氣泡停滯在試片內部,試片越容易觀察到鎳粒子大量散佈在非反應表面的現象。 此外,我們藉由流體力學計算軟體(COMSOL Multiphysics®),模擬微流道內部的流場,發現在有渦流出現的地方容易有較多的鎳粒子沉積。另外,我們利用有線元素分析法計算沉積在反應表面上的鎳粒子受到流體推動的受力值後,推測可能存在一臨界受力值決定了鎳粒子能否成功附著在反應表面上,因此當流速過高時,試片會發生不上鍍的情形。 In semiconductor industry, one of the strategies to follow the Moore’s law is through the Three-Dimensional Integrated Circuit (3D-IC) architecture. However, using conventional solder ball as the joint will cause a reliability issue when the electronic components continue to decrease in size. Therefore, Cu to Cu interconnections has attracted increasing amount of attentions recently. One of the way to achieve Cu to Cu interconnections is through the electroless Ni-P plating. This technique could ensure the bonding process under low temperature and without pressure. However, when the gap between two chips is too small, the plating solution will be difficult to reach the joints at the center of the chip. Therefore, we introduce microfluidic channel into the bonding process. After the chips were put into this airtight microfluidic channel, the plating solution can successfully pass through the small gap by using syringe pump. However, we know little about the electroless Ni-P plating phenomenon inside microchannel, so the main focus in this thesis is to investigate the effects of the pattern on the test vehicle and the flow rate on electroless Ni-P plating in microchannel. The experimental results shown that the flow rate would affect the reactants concentration distribution, as a result, the deposition rate showed different types of profile under different flow rate. In addition, the hydrogen bubbles is the other critical issue that would affect the plating result as well. It is found that when hydrogen bubbles remain stagnant near the reaction surface, extraneous deposition is often observed. By COMSOL Multiphysics®, we simulate the flow field inside the microchannel. The results shown that under certain circumstances, the vortex would be generated. It is found that the vortex generated places have more Ni-P particles deposit. Furthermore, finite element analysis was used to calculate the flow force exert on the Ni-P particles which deposit on the reaction surface. It is surmised that there might exist a threshold force value that determine the Ni-P particles could well deposit or be flushed away by the flow. Therefore, when the flow rate is too high, unplated result might happened. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79120 |
DOI: | 10.6342/NTU201802427 |
全文授權: | 有償授權 |
電子全文公開日期: | 2023-08-13 |
顯示於系所單位: | 材料科學與工程學系 |
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