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標題: | 奈米銀線對電極於全溶液式製程鈣鈦礦太陽能電池之應用 All Solution Processed Perovskite Solar Cells with Silver Nanowire Top Electrodes |
作者: | Yu Cheng 鄭宇 |
指導教授: | 陳奕君(I-Chun Cheng) |
關鍵字: | 鈣鈦礦太陽能電池,奈米銀線,噴閥式塗佈,紫外光臭氧處理, Perovskite solar cells,silver nanowires,spray coating,ultraviolet ozone, |
出版年 : | 2018 |
學位: | 碩士 |
摘要: | 本研究以溶液式製程製備之奈米銀線薄膜取代真空蒸鍍銀薄膜作為對電極,成功開發出全溶液式製程之平面正規結構鈣鈦礦太陽能電池,並以短時間紫外光臭氧處理奈米銀線對電極面,改善界面特性,使此全溶液製程製備之元件特性與真空蒸鍍銀對電極之元件相當,極具應用潛力。研究中奈米銀線對電極分別以旋轉塗佈及以氮氣或空氣為載流氣體之噴閥式塗佈等溶液式製程製備。由掃描式電子顯微鏡分析可知,噴閥式塗佈之膜均勻性明顯優於旋轉塗佈。由電性分析發現,以空氣為載流氣體之噴閥式塗佈表現最佳,並且可藉由多次噴塗增加奈米銀線厚度,使鈣鈦礦太陽能電池的表現提升。接著,針對此鈣鈦礦太陽能電池之奈米銀線對電極面進行紫外光臭氧處理30、60、120與240 s。由掃描式電子顯微鏡分析可知,經短時間紫外光臭氧處理之奈米銀線/spiro-OMeTAD界面變得較為緊密;X光子能譜分析顯示,紫外光臭氧處理有助於spiro-OMeTAD表面的p型摻雜效應,使奈米銀線/spiro-OMeTAD之界面更為匹配;分流電阻分析說明短時間紫外光臭氧處理能大幅降低漏電流;以及電化學阻抗分析顯示,短時間紫外光臭氧處理有助於降低奈米銀線/spiro-OMeTAD界面傳輸阻抗。最後經電性分析發現最佳處理時間為60 s,元件的能量轉換效率達12.92 %,開路電壓為1.057 V,短路電流密度為18.35 mA/cm2,填充因子為66.6 %;相較於未經紫外光臭氧處理之能量轉換效率10.58 %,開路電壓1.054 V,短路電流密度19.23 mA/cm2與填充因子52.2 %,效率顯著提升22 %。 In this study, we demonstrated all-solution-processed n-i-p type planar perovskite solar cells by replacing vacuum-deposited silver (Ag) with solution-processed silver nanowires (AgNWs) as top electrodes. Furthermore, an ultraviolet ozone (UVO) treatment was applied on the AgNWs counter electrode to improve the cell performance. The deposition of AgNWs was carried out by spin coating and spray coating with nitrogen or air as carrier gas. The scanning electron microscopic (SEM) images show that the uniformity of spray-coated AgNWs films is obviously superior to that of spin-coated ones. Cells with AgNWs counter electrode deposited by spray coating with air as carrier gas exhibit best performance. Next, an UVO treatment was performed on the AgNWs top electrode of the cell for 30, 60, 120 and 240 s. The SEM images show that the contact between spiro-OMeTAD and AgNWs becomes better after UVO treatment for a short duration. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the UVO treatment contributes to p-type doping on the surface of spiro-OMeTAD, leading to a better energy level alignment between spiro-OMeTAD and AgNWs. Moreover, the shunt resistance analysis and electrochemical impedance spectroscopy (EIS) analysis indicate that UVO treatment for a short duration can reduce the cell’s leakage current and the charge transfer resistance at the spiro-OMeTAD/AgNWs interface, respectively. With an optimal UVO treatment duration of 60 s, the cell exhibits a photoelectric conversion efficiency (PCE) of 12.92 %, open circuit voltage (Voc) of 1.057 V, short circuit current density (Jsc) of 18.35 mA/cm2, and fill factor (F.F.) of 66.6 %. Compared with the counterpart without UVO treatment (PCE of 10.58 %, Voc of 1.054 V, Jsc of 19.23 mA/cm2 and F.F. of 52.2 %), the PCE is greatly improved 22 %. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78969 |
DOI: | 10.6342/NTU201803680 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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