應用於無線網路的多頻帶金氧半導體變壓器前端射頻功率放大器分析與設計

Abstract

本論文提出應用在無線網路通訊操作於多頻帶的射頻放大器技巧.第一個晶片為操作在2.4 -GHz / 5-GHz 的雙波峰射頻全積體化前端電路，包含3個雙頻帶變壓器、功率放大器及驅動功率放大器，藉由利用一份硬體與設計雙頻帶變壓器來達成多頻帶效果，在晶片上可減少晶片面積的浪費。利用180-nm CMOS製程，所提出的射頻發射前端在沒有額外元件下，分別在2.4 GHz 與5-GHz 情況下，所能傳遞的功率為+20 dBm / +19.2 dBm的飽和功率輸出。 第二個晶片為操作在2.4 – 6 GHz 的寬頻帶射頻全積體化前端電路。藉由我們提出的基於變壓器高階匹配電路，把傳統的帶通濾波器在大幅節省面積下，達到寬頻功能，在2.7-GHz時小訊號峰值輸出為16 dB 以及所能傳遞的功率為 +19.2 dBm的飽和功率輸出。

This thesis presents two fully-integrated multiband power amplifiers for wireless communications application. The first chip is operating at 2.4 -GHz / 5-GHz concurrent dualband RF integrated front-end circuit comprising three trifilar transformers, one power amplifier and one driver. By design well of the transformer we can achieve a multi-band function on the chip and also reduce the waste of chip area. By using a standard 180-nm CMOS process, the proposed RF transmitter front-end requires no off-chip components while demonstrates 15-dB power gain with 19.8-dBm Psat measured at 2.4 GHz, and 10.5-dB power gain with 19-dBm saturated output power (Psat) measured at 5 GHz. The second chip is operating at 2.4 - 6 GHz of fully integrated wideband RF front-end circuit. With our proposed transformer-based high order matching network circuit, we can save area which compare to the traditional band-pass filter matching network. By also using a standard 180-nm CMOS process, the proposed RF transmitter front-end demonstrates 16-dB peak power gain with 19.8-dBm Psat measured at 2.7 GHz, and measurd bandwidth is from 2.3 to 4.5 GHz which fractional bandwidth is 63%.