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標題: | 非極性及半極性氮化銦鎵/氮化鎵量子井發光二極體之光電特性之數值模擬分析 Numerical Simulation of Optoelectronic Properties of Nonpolar and Semipolar InGaN/GaN Quantum Well Light Emitting Diodes |
作者: | Hung-Hsun Huang 黃泓勛 |
指導教授: | 吳育任(Yuh-Renn Wu) |
關鍵字: | 非極性,“a”平面,半極性,氮化銦鎵,氮化鎵,量子井,帕松方程,薛丁格方程,k.p法,極化率,自發發光,發光二極體, nonpolar,a-plane,semipolar,InGaN,GaN,quantum well,Poisson equation,Schrodinger equation,k.p method,polarization ratio,spontaneous emission,LED, |
出版年 : | 2009 |
學位: | 碩士 |
摘要: | 本研究主要是在探討非極性及半極性氮化銦鎵/氮化鎵量子井在不同銦含量、井寬以及注入載子濃度的情況下對於發光極化特性的影響。為了找到一個擁有最佳的極化發光特性的長晶角度,研究中也討論了半極性氮化銦鎵的合金對於不同的長晶面的價電帶特性,藉此來探討量子井結構的形成對於極化發光特性之影響。而在本研究中則利用帕松、薛丁格方程以及k·p法來求解量子井中的位能以及電子電洞在量子井中的分佈,並且採用疊代的方法來求出這些方程在此系統中的解,進而求得非極性及半極性氮化銦鎵/氮化鎵量子井的發光極化率。從研究結果中可以發現,對於非極性“a”平面的量子井而言,相對於較濃的銦含量、較窄的量子井寬會使得被侷限之能階的能量差較大進而得到較大的發光極化率。然而,越多的載子注入量子井中會造成發光極化率的減少,其為當發光二極體在高功率應用上的一個缺點;除此之外也探討了半極性(10-1-3)、(11-22)以及θ=75度這些不同長晶面的量子井結構的極化發光特性。在本研究中,我們探討了非極性“a”平面及半極性量子井發光二極體設計最佳化的情況,這些研究對於液晶顯示器背光模組及雷射的應用上有極大的潛力,相信未來在實務面的發展上可以提供元件設計所需的資訊。 This thesis discusses the optical characteristics of a nonpolar and semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. Also, we have studied the properties of valence band structure of the semipolar InGaN alloy films with arbitrary crystal growth orientations to discuss the key issue of designing a polarized light source. The self-consistent Poisson and 6×6 k·p Schrödinger solver has been applied to study the band structures in nonpolar a-plane and semipolar InGaN-based quantum well light emitting diodes (LEDs). For nonpolar a-plane quantum well structure, we find that the larger indium composition and smaller well width make the energy separation of |Y'>-like state to |X'>-like state larger, and as a result enhance the polarization ratio of light. However, the polarization ratio decreases as the carrier injection increases, which might be a drawback for high power applications. The optical polarization properties of semipolar (10-1-3), (11-22),and θ=75 degree InGaN/GaN quantum well were also investigated. Basically, we have studied the optimization condition for designing the nonpolar a-plane and semipolar InGaN quantum well LED for applications, such as liquid crystal display backlight modules and lasers, which would be useful information for device designs. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45661 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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