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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36802
Title: | 矽奈米線場效電晶體之研製 The Fabrication of Silicon Nano-wire Field Effect Transistor |
Authors: | Jui-Lin Chen 陳瑞麟 |
Advisor: | 李嗣涔(Si-Chen Lee) |
Keyword: | 矽奈米線,場效電晶體,壓力, Silicon Nano-wire,Field Effect Transistor,pressure, |
Publication Year : | 2005 |
Degree: | 碩士 |
Abstract: | 本論文研究利用低壓化學氣相沈積法來成長不摻雜、P型及N型摻雜的矽奈米線(SiNW)並觀察壓力對其成長之影響,我們使用不同直徑的金奈米顆粒當催化劑找出生長不同矽奈米線的成長溫度與壓力範圍。此外,並利用穿透式電子顯微鏡(TEM)來分析矽奈米線的成分、結晶與表面非晶結構之氧化層形成機制。最後,我們成功利用矽奈米線製備場效電晶體,並利用電性量測確定P型矽奈米線的摻雜。 The growth of undoped, p-type, and n-type silicon nanowires (SiNWs) has been systematically investigated using the low pressure chemical vapor deposition. The effect of the chamber pressure on the growth is observed. The growth windows of SiNWs with different diameters of Au nanoparticles as catalysts were also found. The growth mechanism of Silicon nanowires and native oxide on the SiNWs are analyzed by transmission electron microscope (TEM). The SiNWs FET was fabricated successfully. Single crystal p-type SiNWs have been prepared and characterized by electrical transport measurements. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36802 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 電子工程學研究所 |
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ntu-94-1.pdf Restricted Access | 2.84 MB | Adobe PDF |
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