以最佳化氧處理製作高效能氧化鋅薄膜電晶體之研究

Abstract

我們在玻璃基板上製作出高效能的增強式氧化鋅薄膜電晶體。氧化鋅薄膜是用射頻濺鍍的方式在通氧下低溫沈積而成，接著再將氧化鋅薄膜表面做最佳的氧處理。當電晶體在飽和區且偏壓為VDS=10∼20V 和VGS = 5V時，氧化鋅薄膜電晶體最高之IDS = 0.85 mA，電流開/關比為 1.47×106 ，場效電子遷移率最高為 391.6 cm2/Vs。我們相信這些結果是目前效能最佳的氧化鋅薄膜電晶體之一。

We demonstrate a high-performance enhancement-mode ZnO TFT on a glass substrate. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low temperature and optimized oxygen passivation conditions on the ZnO surface. When biased at the saturation region VDS = 10~20V and VGS = 5V, the IDS is as high as 0.85mA. The Ion/Ioff ratio is 1.47×106 and field effect mobility as high as 391.6 cm2/Vs. We believe the results are among the best ZnO TFTs ever obtained.