設計應用於微波與毫米波頻段之金氧半互補式半導體寬頻混波器

Abstract

在過去的幾年中，元件的速度差異在III-V族與金氧半互補式半導體正不斷地減少。許多應用於毫米波的電路已經使用深次微米金氧半互補式半導體製程實現，而本論文的主題在於使用先進的金氧半互補式半導體製程設計並實現應用於毫米波之寬頻混波器。 本論文的第一部份包含混波器架構以及評估參數等。這個部份將會介紹被動式以及主動式混波器架構，然後常用於評估混波器的參數也會在這個部份進行解釋。接著是使用0.13-um的金氧半互補式半導體製程來設計並實現一個使用分散式架構的被動式汲極混波器。此混波器具有-5.5 ± 1 dB的轉換增益(conversion gain)，並且可操作頻率範圍從0.8到77.5 GHz。此電路架構是第一次在金氧半互補式半導體製程被提出並展現了超寬頻的特性，而且不需消耗直流功率並具有76.7 GHz的操作頻寬以及0.67 × 0.58 mm2微小的晶片面積。 另外一個使用90-nm的金氧半互補式半導體製程的次諧波吉伯特單元混波器(Sub-harmonic Gilbert cell mixer)也在本論文提出。此混波器具有-1.5 ± 1.5 dB的轉換增益(conversion gain) 以及0.61 × 0.58 mm2微小的晶片面積，並且可操作頻率範圍從30到100 GHz。以上所提出的兩顆寬頻混波器具有超過70 GHz的操作頻寬。伴隨著金氧半互補式半導體在製程上的特性，在本論文所提出的兩顆寬頻混波器都非常適合應用於低成本以及高度整合的毫米波系統。

Over the last years, the speed gap between leading-edge III/V and CMOS process has been significantly decreased. Many of millimeter-wave circuits have been demonstrated using sub-micron CMOS process. The goal of this thesis is to design and implement wideband mixers using advanced CMOS process for millimeter-wave applications. The first part of this thesis consists of the mixers topology and evaluation parameters. In this part, passive and active mixers topology will be introduced. Then the commonly used parameters of mixers evaluation are also explained. Follow are the design and implementation of a passive distributed drain mixer using commercial 0.13-um CMOS technologies. This mixer achieves a wide and flat conversion gain of -5.5 ± 1 dB from 0.8 to 77.5 GHz. To best of our knowledge, this is first passive distributed drain-pumped topology proposed in CMOS process. It also demonstrates ultra-broadband characteristic. The mixer consumes zero DC power consumption with a compact size of 0.67 × 0.58 mm2 and operation bandwidth of 76.7 GHz. A sub-harmonic Gilbert-cell mixer using 90-nm CMOS technologies is also presented in this thesis. This mixer exhibits a flat conversion gain of -1.5 ± 1.5 dB from 30 to 100 GHz. The total dc power consumption of this mixer is equal to 58.3 mW with a compact size of 0.61 × 0.58 mm2. The operation bandwidths of both wideband mixers are over 70 GHz. With the characteristics of CMOS process, the wideband mixers presented in this thesis are suitable for low-cost and high-integrated millimeter-wave system application.