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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王立民 | zh_TW |
| dc.contributor.advisor | Li-Min Wang | en |
| dc.contributor.author | 周均澤 | zh_TW |
| dc.contributor.author | Chun-Tse Chou | en |
| dc.date.accessioned | 2025-08-20T16:32:50Z | - |
| dc.date.available | 2025-08-21 | - |
| dc.date.copyright | 2025-08-20 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-08-14 | - |
| dc.identifier.citation | [1] MAJORANA, Ettore. Teoria simmetrica dell’elettrone e del positrone. Il Nuovo Cimento (1924-1942), 1937, 14.4: 171-184.
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A. Quantum magnetoresistance of layered semimetals. Physical Review B, 1999, 60.6: 4231. [66] SIVA, Vantari, et al. Superconducting proximity effect in NiBi3-Ni-NiBi3 trilayer system with sharp superconductor-ferromagnet boundaries. Journal of Applied Physics, 2016, 119.6. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98986 | - |
| dc.description.abstract | 本研究首先利用磁控濺鍍製備出Bi/Ni雙層薄膜，並確定最佳條件為在基板溫度250˚C濺鍍Ni薄膜和在室溫下濺鍍Bi薄膜，並以80˚C退火。之後製備出Au/Bi/Ni多層薄膜以研究Au層和Bi/Ni雙層薄膜之間的介面。接著使用X光繞射儀(XRD)、穿透式電子顯微鏡(TEM)和能量色散X射線譜(EDS)對樣品進行分析，確認了Bi/Ni雙層薄膜中NiBi3的存在並觀察到Au/Bi/Ni多層薄膜中Au層部分擴散至Bi層中。
接下來取兩個Bi層厚度不同的Bi/Ni雙層薄膜和取兩個Au層厚度不同的Au/Bi/Ni多層薄膜樣品進行電性量測，透過R-T分析得到樣品的H_(c2,⊥) (0)、H_(c2,∥) (0)、ξ_⊥ (0)、ξ_∥ (0)和d_sc值，並且發現樣品Au20/Bi100中出現二次轉變，代表出現了NiBi3以外的未知超導來源；分析表面超導(Hc3)和H_(c2,∥) (0)的比值觀測不同厚度的Bi層和Au層對表面超導的影響；量測釘扎位能U/k_B 對外加磁場H之間的關係以及測量系統的Bereeinskii-Kosterlite-Thouless (BKT)相變來證明樣品(包含未知超導來源)的二維材料特性；量測磁阻發現所有樣品在低溫下具有弱反局域(Weak Anti-Localization，WAL)效應，所有Bi/Ni雙層薄膜在高溫下還同時具有一次方線性不飽和磁阻，證實NiBi3薄膜可能具有二維拓樸超導性質。 | zh_TW |
| dc.description.abstract | This study first prepared Bi/Ni bilayer films using magnetron sputtering, with optimal conditions determined as Ni film deposition at 250°C substrate temperature and Bi film deposition at room temperature, followed by 80°C annealing. Subsequently, Au/Bi/Ni multilayer films were fabricated to investigate the interface between Au layer and Bi/Ni bilayer. Through X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS) analyses, the presence of NiBi3 in Bi/Ni bilayer films was confirmed, and partial diffusion of Au layer into Bi layer was observed in Au/Bi/Ni multilayers.
Electrical measurements were conducted on two Bi/Ni bilayer films with different Bi thicknesses and two Au/Bi/Ni multilayers with varying Au thicknesses. R-T analysis revealed parameters including H_(c2,⊥) (0), H_(c2,∥) (0), ξ_⊥ (0), ξ_∥ (0) and d_sc. A secondary transition was observed in the Au20/Bi100 sample, indicating an unknown superconducting source beyond NiBi3. The ratio of surface superconductivity (Hc3) to H_(c2,∥) (0) was analyzed to investigate the influence of Bi and Au layer thicknesses on surface superconductivity. Measurements of pinning potential U/k_B versus magnetic field H and Bereeinskii-Kosterlite-Thouless (BKT) transition characterization demonstrated two-dimensional material properties in all samples (including those with unknown superconducting sources). Magnetoresistance measurements revealed weak antilocalization (WAL) effects at low temperatures in all samples, while Bi/Ni bilayers additionally exhibited linear unsaturated magnetoresistance proportional to the first power at high temperatures, suggesting potential two-dimensional topological superconducting properties in NiBi3 films. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-08-20T16:32:50Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-08-20T16:32:50Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 論文口試委員審定書 i
致謝 ii 摘要 iii Abstract iv 目次 vi 圖次 ix 表次 xvii 第一章 緒論 1 1.1拓樸超導體(Topological Superconductor，TSC) 1 1.2三鉍化鎳(NiBi3)簡介 2 1.3金(Au)簡介 3 1.4 Bi/Ni雙層/多層薄膜之文獻回顧 4 1.5研究動機 18 第二章 理論背景與原理簡介 19 2.1超導體之發展背景 19 2.2超導體特性 21 2.2.1零電阻(Zero Resistence) 21 2.2.2邁斯納效應(Meissner Effect, Perfect Diamagnetism) 22 2.2.3臨界電流(critical current)及臨界磁場(critical magnetic field) 23 2.3 超導體原理 26 2.3.1倫敦穿隧深度(London penetration depth) 26 2.3.2二流體模型(two-fluid model) 28 2.3.3相干長度(coherence length) 29 2.3.4渦旋態(vortex state)和釘扎效應(Pinning Effect) 32 2.3.5安德森-金磁通蠕動模型(Anderson-Kim Flux Creep Model) 35 2.3.6表面超導(Surface Superconductivity，Hc3) 37 2.3.7磁冷(Field Cooling，FC)與零磁冷(Zero Field Cooling，ZFC) 39 2.3.8鄰近效應(Proximity Effect，PE)與反鄰近效應(Inverse Proximity Effect，IPE) 40 2.4 BKT相變(Bereeinskii-Kosterlite-Thouless transition) 42 2.5弱局域效應(Weak Localization，WL)與弱反局域效應(Weak Anti-Localization，WAL) 43 第三章 實驗方法 46 3.1研究架構 46 3.2薄膜製備系統 47 3.2.1濺鍍原理 47 3.2.2 Ni濺鍍系統 48 3.2.3 Bi濺鍍系統 49 3.2.4薄膜製程 50 3.4量測系統 53 3.4.1 X光繞射儀(X-ray Diffractometer，XRD) 53 3.4.2 SQUID量測系統 54 3.4.3穿透式電子顯微鏡(Transmission electron microscope，TEM) 55 3.4.4能量散射X射線譜(Energy-dispersive X-ray spectroscopy，EDS) 56 第四章 實驗結果與討論 57 4.1薄膜特性分析 57 4.1.1 Ni薄膜特性分析 57 4.1.2 Bi薄膜特性分析 58 4.1.3 Bi/Ni雙層薄膜特性分析 58 4.2微觀結構分析結果 61 4.2.1 XRD分析 61 4.2.2 TEM和EDS分析 63 4.3電性量測結果 73 4.3.1電阻率與溫度變化圖 73 4.3.2外加磁場垂直於樣品之R-T分析 74 4.3.3外加磁場平行於樣品之R-T分析 78 4.3.4釘扎位能與磁場之關係 84 4.3.5表面超導量測分析(Hc3) 96 4.4 BKT相變分析 100 4.5磁阻(MR)分析 110 第五章 結論 128 Reference 130 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | NiBi3 | zh_TW |
| dc.subject | 第二類超導 | zh_TW |
| dc.subject | 釘扎效應 | zh_TW |
| dc.subject | BKT 相變 | zh_TW |
| dc.subject | Hc3 | zh_TW |
| dc.subject | 二維材料 | zh_TW |
| dc.subject | 拓樸超導體 | zh_TW |
| dc.subject | Type-II superconductors | en |
| dc.subject | Topological superconductors | en |
| dc.subject | Two-dimensional materials | en |
| dc.subject | Hc3 | en |
| dc.subject | BKT transition | en |
| dc.subject | Pinning effect | en |
| dc.subject | NiBi3 | en |
| dc.title | 鉍/鎳雙層薄膜和金/鉍/鎳三層薄膜之超導介面特性研究 | zh_TW |
| dc.title | Superconducting Interface Properties of Bi/Ni Bilayer Films and Au/Bi/Ni Trilayer Films | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 尤孝雯;陳昭翰 | zh_TW |
| dc.contributor.oralexamcommittee | Hsiao-Wen Yu;Jau-Han Chen | en |
| dc.subject.keyword | NiBi3,第二類超導,釘扎效應,BKT 相變,Hc3,二維材料,拓樸超導體, | zh_TW |
| dc.subject.keyword | NiBi3,Type-II superconductors,Pinning effect,BKT transition,Hc3,Two-dimensional materials,Topological superconductors, | en |
| dc.relation.page | 136 | - |
| dc.identifier.doi | 10.6342/NTU202504230 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2025-08-15 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 應用物理研究所 | - |
| dc.date.embargo-lift | 2025-08-21 | - |
| 顯示於系所單位： | 應用物理研究所 | |
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