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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97980完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管希聖 | zh_TW |
| dc.contributor.advisor | Hsi-Sheng Goan | en |
| dc.contributor.author | 吳奕賢 | zh_TW |
| dc.contributor.author | Yi-Hsien Wu | en |
| dc.date.accessioned | 2025-07-23T16:19:54Z | - |
| dc.date.available | 2025-07-24 | - |
| dc.date.copyright | 2025-07-23 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-07-07 | - |
| dc.identifier.citation | [1] R. P. Feynman, “Simulating physics with computers,” International Journal of Theoretical Physics, vol. 21, p. 467–488, June 1982.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97980 | - |
| dc.description.abstract | 矽自旋量子位元是實現可大規模量子計算的平台，大規模量子計算需要的量子糾錯碼要求量子位元操控保真度需超越 99% 的閾值。在此，我們展示了在矽元件中自旋量子位元的高保真度控制，我們展示了超越了此閾值並且接近 99.9% 的保真度目標。我們在純化後的矽/矽鍺自旋量子位元裝置中，實現了單量子位元閘 99.99% 的保真度，以及雙量子位元受控反閘(controlled-NOT gate) 99.5% 的保真度。此外，我們還證明了利用共用微波控制線同時控制多個自旋量子位元陣列的可行性，同時維持了約 99.9% 的單量子位元閘保真度。這些結果將在未來提升量子位元保真度時提供幫助，並且也突顯了自旋量子位元裝置在邁向實用量子計算方面的潛力。 | zh_TW |
| dc.description.abstract | Spin qubits in silicon are a leading platform for scalable quantum computation. To implement large-scale quantum computation, the ability to implement fault-tolerant surface code is needed, which requires qubit operation fidelities exceeding the 99% fault-tolerance threshold. Moreover, improving these operation fidelities further reduces the number of physical qubits required to encode a logical qubit with the same logical error rate, making it more practical to implement useful quantum computation. Here, we demonstrate high-fidelity control of spin qubits in isotopically purified silicon, surpassing the 99% threshold and approaching the practical fidelity target of 99.9%. We achieved 99.99% fidelity for single-qubit gates and 99.5% fidelity for two-qubit controlled-NOT gates in purified Si/SiGe spin qubit devices. Furthermore, we demonstrate the ability to control an array of spin qubits simultaneously with a shared control line while maintaining the ∼ 99.9% single-qubit gate fidelity. These results will help improve operation fidelities in future spin qubit devices and underscore the potential for spin qubit devices to be scaled up towards practical quantum computation. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-07-23T16:19:54Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-07-23T16:19:54Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Acknowledgments II
摘要 IV Abstract V Contents VI List of Figures IX List of Tables XII List of Publications XIII 1. Introduction 1 1.1 Quantum Computers and Qubits 1 1.2 Surface Code and Error Thresholds 2 1.3 Spin Qubits in Solid-State Devices 6 1.4 Structure of this Thesis 8 2. Si/SiGe Spin Qubits 10 2.1 Confining electrons in Si/SiGe devices 10 2.2 Initialization and Readout of Spin State 16 2.2.1 Energy-selective readout 16 2.2.2 Spin-selective readout 17 2.3 Manipulating Single Spin State 20 2.4 Spin Qubit Error and Noise 27 2.5 Evaluation of Quantum Gate Performance 29 2.5.1 Randomized Benchmarking 30 2.5.2 Gate-Set Tomography 32 3. Hamiltonian Phase Error in Resonantly Driven CNOT Gate Above the Fault-Tolerant Threshold 37 3.1 Introduction 37 3.2 Results 39 3.2.1 Device and controlled rotation gates 39 3.2.2 Measuring the off-resonant Hamiltonian phase error 43 3.2.3 Compensation of the off-resonant Hamiltonian phase error 51 3.2.4 Virtual CZ Gate 54 3.3 Discussion 58 4. Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array 60 4.1 Introduction 61 4.2 Five-qubit device and operation 62 4.3 High fidelity gate with Kaiser-window pulse 65 4.4 Simultaneous operation of two qubits 74 4.5 Simultaneous operation of multiple qubits 79 4.6 Conclusions 83 5 Conclusion 86 5.1 Summary 86 5.2 Outlook and future directions 87 Bibliography 94 A Measurement Setup 118 B Fidelity Benchmarking Experiments 120 B.1 Two-qubit CROT randomized benchmarking 120 B.2 Two-qubit CROT gate-set-tomography 121 B.3 Single-qubit randomized benchmarking 124 B.4 Single-qubit gate-set-tomography 125 C Simulation 129 C.1 Single-qubit gate simulation 129 C.2 Two-qubit controlled-rotation simulation 130 C.3 Simulation of gate-set-tomography with PSB readout 131 D Experiments Details 133 D.1 Quantum gate tuneup 133 D.2 Device fabrication 135 D.3 Qubit control 135 D.4 Kaiser-window pulse 136 D.4.1 Five-qubit tomographic readout 137 D.4.2 RB simulations incorporating measured qubit noise 138 D.5 Micromagnet for power-efficient control 139 | - |
| dc.language.iso | en | - |
| dc.subject | 量子容錯閾值 | zh_TW |
| dc.subject | 量子操作 | zh_TW |
| dc.subject | 高保真度 | zh_TW |
| dc.subject | 自旋量子位元 | zh_TW |
| dc.subject | 量子點 | zh_TW |
| dc.subject | fault-tolerant threshold | en |
| dc.subject | Spin qubits | en |
| dc.subject | quantum dot | en |
| dc.subject | high-fidelity | en |
| dc.subject | quantum operation | en |
| dc.title | 超過量子容錯計算閾值的矽/矽鍺自旋量子位元控制 | zh_TW |
| dc.title | Si/SiGe Spin Qubit Operations with Fidelities Above the Fault-Tolerant Threshold | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.oralexamcommittee | 樽茶清悟;梁啟德;徐碩鴻;張鑑元 | zh_TW |
| dc.contributor.oralexamcommittee | Seigo Tarucha;Chi-Te Liang;Shawn SH Hsu;Chien-Yuan Chang | en |
| dc.subject.keyword | 自旋量子位元,量子點,高保真度,量子操作,量子容錯閾值, | zh_TW |
| dc.subject.keyword | Spin qubits,quantum dot,high-fidelity,quantum operation,fault-tolerant threshold, | en |
| dc.relation.page | 141 | - |
| dc.identifier.doi | 10.6342/NTU202501374 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2025-07-08 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 物理學系 | - |
| dc.date.embargo-lift | 2026-07-01 | - |
| 顯示於系所單位： | 物理學系 | |
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