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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊志忠 | zh_TW |
| dc.contributor.advisor | Chih-Chung Yang | en |
| dc.contributor.author | 劉軒宇 | zh_TW |
| dc.contributor.author | Hsuan-Yu Liu | en |
| dc.date.accessioned | 2024-12-24T16:19:08Z | - |
| dc.date.available | 2024-12-25 | - |
| dc.date.copyright | 2024-12-24 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-12-03 | - |
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Lin, “InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors,” Sci Rep 6, 29138 (2016). 26. C. Zhao, X. Yang, B. Wei, J. Liu, R. Chen, C. Luan, H. Xiao,” Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror,” Vacuum 182 109669 (2020). 27. R. T. Elafandy, J. H. Kang, C. Mi, T. K. Kim, J. S. Kwak, J. Han, “Study and Application of Birefringent Nanoporous GaN in the Polarization Control of Blue Vertical-Cavity Surface-Emitting Lasers,” ACS Photonics, 8, 4, 1041–1047 (2021). 28. C. Zhang, R. ElAfandy and J. Han, “Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers,” Appl. Sci. 9(8) (2019) 29. A. S. Barker Jr, and M. Ilegems. "Infrared lattice vibrations and free-electron dispersion in GaN." Physical Review B 7.2 743 (1973). | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96316 | - |
| dc.description.abstract | 我們設計並製造四組基於氮化鎵多孔結構的分佈式布拉格反射器樣品，用於比較其鏡面反射、直線穿透和散射行為，其反射帶中心波長範圍從450至1500奈米不等。在每組樣品中，採用了四種不同的電化學蝕刻電壓以研究不同蝕刻條件的影響。為了實現更長的分散式布拉格反射器工作波長，使用具有較厚的高矽摻雜氮化鎵層的分散式布拉格反射器結構，使孔洞的數量或尺寸變大，導致更強的散射。因此，較長工作波長的分散式布拉格反射器並不一定會帶來更低的散射損耗。此外，我們還比較了有檯面及無檯面製作的分散式布拉格反射器結構及其性能。未進行檯面製作時，薄多孔層的孔隙率較低，導致較低的反射率以及更強的散射，反之，厚多孔層的孔隙率較高，導致較高的反射率以及更的散射。 | zh_TW |
| dc.description.abstract | Four series of GaN porous-structure based distributed Bragg reflector (DBR) samples with different central wavelengths of reflection bands for comparing their specular reflection, line-of-sight transmission, and scattering behaviors are designed and fabricated with the central wavelengths of reflection bands ranged from 450 to 1500 nm. In each series of sample, four electrochemical etching voltages are used for comparing the results of different etching conditions. With a thicker highly Si-doped GaN layer for achieving a longer DBR operating wavelength, the pore number is higher and/or the pore size is larger in such a DBR structure, leading to strong scattering. Therefore, a DBR of a longer operating wavelength does not necessarily lead to a smaller scattering loss. The structures and performances of the DBRs with and without mesa fabrication are also compared. Without mesa fabrication, the porosity is lower (higher) in a thin (thick) porous layer leading to lower (higher) reflectivity and stronger (weaker) scattering. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-12-24T16:19:08Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-12-24T16:19:08Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 I
中文摘要 II 英文摘要 III Contents IV List of Figure VI List of Table XXIII Chapter 1 Introduction 1 1.1 Subsurface GaN nano-porous structures 1 1.2 Periodic GaN nano-porous structures as a distributed Bragg reflector 1 1.3 Research motivations 2 1.4 Thesis structure 3 Chapter 2 Sample Structures and Designations, Fabrication Procedures, and Measurement Methods 4 2.1 Sample structures and designations 4 2.2 Sample fabrication 4 2.3 Small-area transmission and reflection measurement setup 5 Chapter 3 Distributed Bragg Reflectors with Mesa Fabrication 17 3.1 Morphologies of the porous structures 17 3.2 Results of reflection and transmission spectra 19 Chapter 4 Distributed Bragg Reflectors without Mesa Fabrication 84 4.1 Morphologies of the porous structures 84 4.2 Results of reflection and transmission spectra 85 Chapter 5 Discussions 110 5.1 Large- and small-area reflection/transmission measurements 110 5.2 Comparison of surface morphology and porosity between the DBR samples with and without mesa fabrication 111 Chapter 6 Conclusions 128 References 129 | - |
| dc.language.iso | en | - |
| dc.title | 以週期性之氮化鎵奈米孔洞層形成分散式布拉格反射器的反射與散射行為 | zh_TW |
| dc.title | Reflection and Scattering Behaviors of Distributed Bragg Reflectors Formed with Periodical GaN Nano-porous Layers | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 黃建璋;林建中;廖哲浩 | zh_TW |
| dc.contributor.oralexamcommittee | Jian-Jang Huang;Chien-Chung Lin;Che-Hao Liao | en |
| dc.subject.keyword | 氮化鎵多孔結構,分散式布拉格反射器,電化學蝕刻,檯面製造,鏡面反射,直線穿透,散射, | zh_TW |
| dc.subject.keyword | GaN porous structure,distributed Bragg reflector,electrochemical etching,mesa fabrication,specular reflection,line-of-sight transmission,scattering, | en |
| dc.relation.page | 131 | - |
| dc.identifier.doi | 10.6342/NTU202404658 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-12-03 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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| ntu-113-1.pdf | 6.33 MB | Adobe PDF | 檢視/開啟 |
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