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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 姜昌明 | zh_TW |
| dc.contributor.advisor | Chang-Ming Jiang | en |
| dc.contributor.author | 曾仲賢 | zh_TW |
| dc.contributor.author | Zhong-Xian Zhen | en |
| dc.date.accessioned | 2024-11-20T16:05:56Z | - |
| dc.date.available | 2024-11-21 | - |
| dc.date.copyright | 2024-11-20 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-11-11 | - |
| dc.identifier.citation | 參考文獻
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96177 | - |
| dc.description.abstract | 在半導體催化反應中，缺陷與晶軸方向對材料在能階的形成、電荷載子的複合、電荷載子的有效質量等方面有所影響。相較於粉末樣品，固態薄膜可以透過生長基材的選擇來控制薄膜中的晶軸方向或缺陷分布，且在光催化、光電催化後易與反應溶液分離，因此受到重視。基於此原因，本論文以瞬態吸收光譜研究具磊晶（epitaxial）性質的釩酸鉍薄膜在電荷載子複合過程的各向異性以及不同實驗製程下的載子行為。
通過系統性的討論我們探討了三個關鍵因素在飛秒至皮秒時間尺度下對電荷載子動力學的影響。激發脈衝強度的調控說明了電荷載子濃度與複合機制的關聯；磊晶薄膜的光極化方向研究展現了電子－聲子耦合的方向依賴性；快速熱退火與鉬摻雜的製程優化則改善了電荷載子的傳輸特性。 瞬態吸收光譜結果顯示，在飛秒時間尺度下，電荷載子的複合行為展現出晶向依賴性，特別是在電子－聲子耦合過程中。此外，通過優化製程參數，如快速熱退火和鉬摻雜，能夠有效延長電荷載子的壽命，這對提升材料的光催化效率具有重要意義。 綜上所述，本研究結果有助於理解釩酸鉍，此半導體光催化材料的電荷載子動力學，揭示晶軸方向和缺陷控制對光催化性能的影響機制，為優化高效光催化材料的設計和應用提供相關實驗數據與解釋。 | zh_TW |
| dc.description.abstract | In semiconductor photocatalysis, defects and crystallographic orientation significantly affect charge carrier dynamics. This thesis employs transient absorption spectroscopy to investigate the anisotropy of charge carrier recombination processes and carrier behavior under different experimental conditions in epitaxial bismuth vanadate thin films.
Through systematic investigation, we explored three key factors affecting charge carrier dynamics in the femtosecond to picosecond time scale. The control of excitation pulse intensity revealed the correlation between carrier concentration and recombination mechanisms; the study of pump pulse polarization direction in epitaxial films demonstrated the directional dependence of electron-phonon coupling; while process optimization through rapid thermal annealing and molybdenum doping improved charge carrier transport properties. Transient absorption spectroscopy results show that charge carrier recombination behavior exhibits significant crystallographic orientation dependence at the femtosecond time scale, particularly in electron-phonon coupling processes. Moreover, optimizing process parameters, such as rapid thermal annealing and molybdenum doping, effectively extended charge carrier lifetime, which is crucial for enhancing the material's photocatalytic efficiency. In conclusion, this study advances our understanding of charge carrier dynamics in bismuth vanadate, a semiconductor photocatalytic material, revealing how crystallographic orientation and defect control influence photocatalytic performance, thereby providing experimental data and insights for optimizing the design and application of efficient photocatalytic materials. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-11-20T16:05:56Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-11-20T16:05:56Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 謝 辭 ii
中文摘要 iii Abstract iv 目 次 v 圖 次 viii 表 次 xiii 第一章 緒論 1 1.1 研究動機及研究目的 1 1.2 釩酸鉍介紹 4 1.3 瞬態吸收光譜 6 1.3.1 超快瞬態吸收光譜原理 7 1.3.2 飛秒瞬態吸收光譜觀測現象 10 1.4 釩酸鉍瞬態吸收光譜文獻討論 14 第二章 釩酸鉍薄膜製備與實驗儀器 20 2.1 釩酸鉍薄膜樣品製備 20 2.2 薄膜鑑定 23 2.2.1 X射線繞射儀 23 2.2.2 紫外－可見光譜儀 24 2.2.3 掃描式電子顯微鏡 25 2.3 瞬態吸收光譜實驗架設 26 2.3.1 脈衝雷射與種子雷射 26 2.3.2 脈衝雷射放大器 31 2.3.3 控制激發－偵測脈衝延遲時間 36 2.3.4 實驗步驟與參數 38 2.4 訊號擬合 39 第三章 磊晶釩酸鉍薄膜瞬態吸收光譜 42 3.1 釩酸鉍瞬態吸收光譜特性與電荷載子動力學 42 3.1.1 特徵瞬態吸收光譜與解析 42 3.1.2 激發脈衝強度對電荷載子動力學的影響 46 3.2 快速熱退火對電荷載子壽命的影響 49 3.2.1 薄膜鑑定 50 3.2.2 瞬態吸收光譜實驗數據與討論 51 3.3 光極化方向對磊晶釩酸鉍電荷重組的影響 55 3.3.1 薄膜鑑定 56 3.3.2 瞬態吸收光譜實驗數據與討論 60 3.4 鉬摻雜對釩酸鉍薄膜電荷載子壽命的影響 64 3.4.1 薄膜鑑定 65 3.4.2 瞬態吸收光譜實驗數據與討論 69 第四章、結論 73 參考文獻 74 附錄 81 釩酸鉍的晶格定義方向與說明 81 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 釩酸鉍 | zh_TW |
| dc.subject | 磊晶 | zh_TW |
| dc.subject | 電子-聲子耦合 | zh_TW |
| dc.subject | 瞬態吸收光譜 | zh_TW |
| dc.subject | 飛秒雷射 | zh_TW |
| dc.subject | Electron-Phonon Coupling | en |
| dc.subject | Femtosecond Laser | en |
| dc.subject | Transient Absorption Spectroscopy | en |
| dc.subject | Bismuth Vanadate | en |
| dc.subject | Epitaxy | en |
| dc.title | 瞬態吸收光譜探討磊晶釩酸鉍電荷載子動力學及其各向異性 | zh_TW |
| dc.title | Transient Absorption Spectroscopy Study of Charge Carrier Dynamics and Anisotropy in Epitaxial BiVO4 | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 陳俊顯;陳浩銘;李君婷 | zh_TW |
| dc.contributor.oralexamcommittee | Chun-Hsien Chen;Hao-Ming Chen;Chun-Ting Li | en |
| dc.subject.keyword | 飛秒雷射,瞬態吸收光譜,釩酸鉍,磊晶,電子-聲子耦合, | zh_TW |
| dc.subject.keyword | Femtosecond Laser,Transient Absorption Spectroscopy,Bismuth Vanadate,Epitaxy,Electron-Phonon Coupling, | en |
| dc.relation.page | 84 | - |
| dc.identifier.doi | 10.6342/NTU202404566 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-11-12 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 化學系 | - |
| 顯示於系所單位： | 化學系 | |
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|---|---|---|---|
| ntu-113-1.pdf | 4.33 MB | Adobe PDF | 檢視/開啟 |
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