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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96148完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳奕君 | zh_TW |
| dc.contributor.advisor | I-Chun Cheng | en |
| dc.contributor.author | 陳芝伃 | zh_TW |
| dc.contributor.author | Chih-Yu Chen | en |
| dc.date.accessioned | 2024-11-15T16:10:35Z | - |
| dc.date.available | 2024-11-16 | - |
| dc.date.copyright | 2024-11-15 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-10-24 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96148 | - |
| dc.description.abstract | 過渡金屬二硫族化物 ( transition metal dichalcogenides, TMDCs) 層與層之間透過弱凡得瓦力堆疊在一起，使得塊狀晶體可以沿著每個三層結構剝離成單獨的二維薄片，這些TMD薄片沒有懸鍵，因此具有化學穩定性和低載子散射等特性。在TMDCs 中，二碲化鉬 (Molybdenum Ditelluride, MoTe2) 有最小的能隙，有助於增強電子和電洞的載子注入。
本研究透過膠帶層離法 ( tape exfoliation ) 製備二碲化鉬、二硒化鎢 ( tungsten diselenide, WSe2 )、六方晶氮化硼 ( hexagonal boron nitride, hBN ) 及石墨 ( graphite )晶體，以石墨作為接觸電極，製作雙閘極單層結構之二碲化鉬電晶體和雙層結構之二碲化鉬/二硒化鎢電晶體。室溫下，單層結構之二碲化鉬電晶體呈現雙極特性，p型與n型開關電流比分別為 〖7.68×10〗^5 和 〖3.11×10〗^5 ；次臨界擺幅為0.82 V/dec和2.03 V/dec。於5 K的低溫下，p型與n型開關電流比分別提高至 〖9.94×10〗^6 和 〖9.61×10〗^5；次臨界擺幅下降為0.42 V/dec和1.66 V/dec，此元件於低溫下有較好的特性，其電晶體載子傳輸機制為band-like transport。而雙層結構之二碲化鉬/二硒化鎢電晶體室溫下p型與n型開關電流比分別為 〖6.28×10〗^5 和 〖1.77×10〗^6 ；次臨界擺幅為0.84 V/dec和2.21 V/dec。於5 K的低溫下，p型與n型開關電流比分別為 〖1.52×10〗^4 和 〖4.95×10〗^4；次臨界擺幅為1.74 V/dec和1.02 V/dec，此元件載子傳輸屬變程跳躍，於室溫下電性表現較佳。 相同材料會因為原本晶體品質狀況不同，或是製作元件過程中造成缺陷程度的差異，使主導的機制不同。石墨導電性佳，與二碲化鉬皆屬二維材料，相對於直接與三維金屬接觸，更能減少金屬誘導間隙態的產生，本研究以石墨作為接觸電極製作二碲化鉬之電晶體電子及電洞皆能注入，不須化學摻雜的情況下，透過調控閘極區域，就能在導電通道中選擇性地傳輸電子和電洞，可以減少電路中需要的電晶體數量，從而簡化電路設計。雙極性電晶體能夠在不同極性下工作，使得電路設計具有更高的靈活性和穩定性[1]。 | zh_TW |
| dc.description.abstract | Transition metal dichalcogenides (TMDCs) are layered materials held together via weak van der Waals forces. The Bulk crystal can be exfoliated to two-dimensional sheet. The TMDCs material is notable for smooth and no dangling bonds, chemical stability and low carrier scattering. Among TMDCs, molybdenum ditelluride (MoTe2) has the smallest bandgap, enhancing carrier injection for both electrons and holes.
In this study, MoTe2, tungsten diselenide (WSe2), hexagonal boron nitride (hBN), and graphite crystals were prepared through the mechanical exfoliation method by the blue tape. The dual-gate MoTe2 transistor and MoTe2/WSe2 transistor were fabricated with graphite contact electrodes. At room temperature, the MoTe2 transistor exhibited ambipolar behavior. The on/off current ratios of p-channel and n-channel were 7.68×10⁵ and 3.11×10⁵, and the subthreshold swings were 0.82 V/dec and 2.03 V/dec, respectively. At 5 K, the on/off current ratios of p-channel and n-channel increased to 9.94×10⁶ and 9.61×10⁵, and the subthreshold swing decreased to 0.42 V/dec and 1.66 V/dec. This device showed better performance at low temperature, indicating the carrier transport mechanism is phonon scattering-dominated band-like transport. For the MoTe2/ WSe2 transistor, the on/off current ratio of p-channel and n-channel were 6.28×10⁵ and 1.77×10⁶, and the subthreshold swing were 0.84 V/dec and 2.21 V/dec, respectively at room temperature. At 5 K, the on/off current ratios of p-channel and n-channel are 1.52×104 and 4.95×104, and the subthreshold swings were 1.74 V/dec and 1.02 V/dec. In this device, the carrier transport mechanism is dominated by variable range hopping, which shows better electrical performance at room temperature. The dominant mechanism in similar materials may be different due to the quality of crystals and defects caused during the fabrication process. Graphite contacts have excellent conductivity and easily to exfoliate, which can reduce the formation of metal-induced gap states compared to three-dimensional metal contacts. In this study, MoTe2 transistors with graphite contacts allowed both electron and hole injection without chemical doping. By controlling the gate region, selective transport of electrons and holes in the channel could be achieved, decreasing the number of transistors in the circuit and simplifying circuit design. Ambipolar transistors can operate under different polarities, offering flexibility and stability in circuit design. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-11-15T16:10:35Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-11-15T16:10:35Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract IV 目次 VI 圖次 IX 表次 XIII 第一章 緒論 1 1.1 研究背景 1 1.2 研究動機與目的 3 1.3 論文架構 5 第二章 理論基礎與文獻回顧 6 2.1 場效電晶體簡介 6 2.1.1 二維場效電晶體之結構 6 2.1.2 二維場效電晶體之特徵參數 8 2.1.3 二維場效電晶體之工作原理 13 2.2 二維材料簡介 14 2.2.1 二碲化鉬 ( Molybdenum ditelluride, MoTe2 ) 14 2.2.2 二硒化鎢 (tungsten diselenide, WSe2 ) 18 2.2.3 石墨 ( graphite ) 19 2.2.4 六方晶氮化硼 (hexagonal boron nitride, hBN ) 20 2.3 二維場效電晶體之文獻探討 22 2.3.1 場效電晶體發展背景 22 2.3.2 二碲化鉬電晶體之雙極性 26 2.3.3 二碲化鉬電晶體之接觸材料選擇 29 2.3.4 二維凡得瓦異質結構 33 第三章 實驗方法與步驟 39 3.1 二維晶體製備 39 3.1.1 乾式轉移 41 3.2 黃光微影製程 43 3.2.1 光學微影 43 3.2.2 電子束微影 45 3.3 薄膜沉積製程 48 3.3.1 射頻磁控濺鍍 48 3.3.2 電子束蒸鍍 50 3.4 打線接合 52 3.4.1 楔型接合 52 3.4.2 球型接合 53 3.4.3 打線接合機 54 3.4.4 銀膠接合 56 3.5 二維電晶體製程 57 3.6 量測與鑑定分析方法 61 3.6.1 電晶體之電性曲線量測 61 3.6.2 溫控系統 64 3.6.3 原子力顯微鏡 65 第四章 結果與討論 67 4.1 二維材料厚度鑑定 67 4.1.1 光學對比度 67 4.1.2 二碲化鉬單層結構電晶體 70 4.1.3 二碲化鉬/二硒化鎢結構電晶體 73 4.2 二碲化鉬之電特性分析 76 4.2.1 二碲化鉬單層結構之電特性分析 76 4.2.2 二碲化鉬/二硒化鎢雙層結構之電特性分析 82 4.3 二碲化鉬電晶體電特性之變溫分析 87 4.3.1 二碲化鉬單層結構電特性之變溫分析 87 4.3.2 二碲化鉬/二硒化鎢雙層結構電特性之變溫分析 92 4.3.3 不同結構之二碲化鉬電晶體特性比較 98 第五章 結論與未來展望 102 5.1 結論 102 5.2 未來展望 104 附錄 106 參考文獻 116 | - |
| dc.language.iso | zh_TW | - |
| dc.title | 以石墨為接觸之二維二碲化鉬電晶體研究 | zh_TW |
| dc.title | The Study of 2D Molybdenum Ditelluride Field-Effect Transistors with Graphite Contacts | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 陳建彰;李偉立 | zh_TW |
| dc.contributor.oralexamcommittee | Jian-Zhang Chen;Wei-Lee Li | en |
| dc.subject.keyword | 過渡金屬硫化物,二碲化鉬,六方晶氮化硼,石墨接觸,場效電晶體,雙極性, | zh_TW |
| dc.subject.keyword | Transition metal dichalcogenides (TMDCs),molybdenum ditelluride (MoTe2),hexagonal boron nitride (hBN),graphite contact,field-effect transistor,ambipolar, | en |
| dc.relation.page | 126 | - |
| dc.identifier.doi | 10.6342/NTU202404498 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2024-10-24 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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