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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李峻霣 | zh_TW |
| dc.contributor.advisor | Jiun-Yun Li | en |
| dc.contributor.author | 黃俊瑋 | zh_TW |
| dc.contributor.author | Jyun-Wei Huang | en |
| dc.date.accessioned | 2024-09-25T16:33:41Z | - |
| dc.date.available | 2024-09-26 | - |
| dc.date.copyright | 2024-09-25 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-09-07 | - |
| dc.identifier.citation | [1] S. Dang, O. Amin, B. Shihada, and M.-S. Alouini, "What should 6G be?," Nature Electronics, vol. 3, no. 1, pp. 20-29, 2020.
[2] W. Jiang, B. Han, M. A. Habibi, and H. D. Schotten, "The road towards 6G: A comprehensive survey," IEEE Open Journal of the Communications Society, vol. 2, pp. 334-366, 2021. [3] W. Saad, M. Bennis, and M. Chen, "A vision of 6G wireless systems: Applications, trends, technologies, and open research problems," IEEE network, vol. 34, no. 3, pp. 134-142, 2019. [4] A. A. A. Solyman and K. Yahya, "Evolution of wireless communication networks: from 1G to 6G and future perspective," International journal of electrical and computer engineering, vol. 12, no. 4, p. 3943, 2022. [5] A. EROGLU, "5G and Beyond Networks for Digital Transformation: Opportunities and Productivity," Current Studies in Digital Transformation and Productivity, vol. 98, 2022. [6] I. Ketata, S. Ouerghemmi, A. Fakhfakh, and F. Derbel, "Design and Implementation of Low Noise Amplifier Operating at 868 MHz for Duty Cycled Wake-Up Receiver Front-End," Electronics, vol. 11, no. 19, p. 3235, 2022. [7] M. Feng, S.-C. Shen, D. C. Caruth, and J.-J. Huang, "Device technologies for RF front-end circuits in next-generation wireless communications," Proceedings of the IEEE, vol. 92, no. 2, pp. 354-375, 2004. [8] A. Caglar, S. Van Winckel, S. Brebels, P. Wambacq, and J. Craninckx, "Design and analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for superconducting qubit readout," IEEE Journal of Solid-State Circuits, vol. 58, no. 6, pp. 1586-1596, 2022. [9] H. Chen, H. Zhu, L. Wu, W. Che, and Q. Xue, "A wideband CMOS LNA using transformer-based input matching and pole-tuning technique," IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 7, pp. 3335-3347, 2021. [10] E. Cha, N. Wadefalk, G. Moschetti, A. Pourkabirian, J. Stenarson, and J. Grahn, "A 300-µW cryogenic HEMT LNA for quantum computing," in 2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020: IEEE, pp. 1299-1302. [11] A. Helali, M. Gassoumi, M. Gassoumi, and H. Maaref, "Design and optimization of LNA amplifier based on HEMT GaN for X-band wireless-communication and IoT applications," Silicon, vol. 13, no. 8, pp. 2645-2653, 2021. [12] P.-H. Lee et al., "Noise performance investigation of AlGaN/GaN HEMT with tall gate stem for millimeter-wave LNA application," IEEE Journal of the Electron Devices Society, 2023. [13] W. T. Wong, M. Hosseini, H. Rücker, and J. C. Bardin, "A 1 mW Cryogenic LNA Exploiting Optimized SiGe HBTs to Achieve an Average Noise Temperature of 3.2 K from 4–8 GHz," in 2020 IEEE/MTT-S International Microwave Symposium (IMS), 4-6 Aug. 2020 2020, pp. 181-184. [14] E. Vardarli, P. Sakalas, and M. Schröter, "A 5.9 mW E-/W-band SiGe-HBT LNA with 48 GHz 3-dB bandwidth and 4.5-dB noise figure," IEEE Microwave and Wireless Components Letters, vol. 32, no. 12, pp. 1451-1454, 2022. [15] V. Chauhan, N. Collaert, and P. Wambacq, "A 120–140-GHz LNA in 250-nm InP HBT," IEEE Microwave and Wireless Components Letters, vol. 32, no. 11, pp. 1315-1318, 2022. [16] A. H. Pawlikiewicz and D. Hess, "Choosing RF CMOS or SiGe BiCMOS in mixed-signal design," RF DESIGN, vol. 29, no. 3, p. 36, 2006. [17] N. Cahoon, P. Srinivasan, and F. Guarin, "6G roadmap for semiconductor technologies: Challenges and advances," in 2022 IEEE International Reliability Physics Symposium (IRPS), 2022: IEEE, pp. 11B. 1-1-11B. 1-9. [18] M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, and M. J. Rodwell, "130nm InP DHBTs with ft> 0.52 THz and f max> 1.1 THz," in 69th Device Research Conference, 2011: IEEE, pp. 281-282. [19] J. Pekarik et al., "SiGe HBTs with ${f_ {T}/f_ {\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\max}\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\,\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\sim\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\, 375/510GHz} $ Integrated in 45nm PDSOI CMOS," in 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021: IEEE, pp. 1-4. [20] M. Urteaga, Z. Griffith, M. Seo, J. Hacker, and M. J. Rodwell, "InP HBT technologies for THz integrated circuits," Proceedings of the IEEE, vol. 105, no. 6, pp. 1051-1067, 2017. [21] O. M. Kane, L. Lucci, P. Scheiblin, S. Lepilliet, and F. Danneville, "22nm ultra-thin body and buried oxide FDSOI RF noise performance," in 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019: IEEE, pp. 35-38. [22] B. Banerjee et al., "Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors," IEEE transactions on electron devices, vol. 52, no. 4, pp. 585-593, 2005. [23] H. Rücker, J. Korn, and J. Schmidt, "Operation of SiGe HBTs at cryogenic temperatures," in 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2017: IEEE, pp. 17-20. [24] K.-Y. Tien, "Electron Transport and Simulation of Band Structures of GeSn Alloys," Master Thesis, GIEE, NTU, Taipei, Taiwan, 2022. [25] G.-E. Chang, R. Basu, B. Mukhopadhyay, and P. K. Basu, "Design and modeling of GeSn-based heterojunction phototransistors for communication applications," IEEE Journal of Selected Topics in Quantum Electronics, vol. 22, no. 6, pp. 425-433, 2016. [26] H. Lan and C. Liu, "Band alignments at strained Ge1− xSnx/relaxed Ge1− ySny heterointerfaces," Journal of Physics D: Applied Physics, vol. 50, no. 13, p. 13LT02, 2017. [27] W.-H. Tu, S.-H. Hsu, and C.-W. Liu, "The pn junctions of epitaxial germanium on silicon by solid phase doping," IEEE Transactions on Electron Devices, vol. 61, no. 7, pp. 2595-2598, 2014. [28] J. Shim et al., "Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {n}^{+}/\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {p} $ Junction," IEEE Electron Device Letters, vol. 34, no. 1, pp. 15-17, 2012. [29] H.-Y. Yu, S.-L. Cheng, P. B. Griffin, Y. Nishi, and K. C. Saraswat, "Germanium In Situ Doped Epitaxial Growth on Si for High-Performance $\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {n}^{+}/\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {p} $-Junction Diode," IEEE electron device letters, vol. 30, no. 9, pp. 1002-1004, 2009. [30] J.-H. Park, D. Kuzum, M. Tada, and K. C. Saraswat, "High performance germanium N+∕ P and P+∕ N junction diodes formed at low Temperature (⩽ 380° C) using metal-induced dopant activation," Applied Physics Letters, vol. 93, no. 19, 2008. [31] J.-Y. Liu, "Fabrication and Characterization of GeSn n+/p Diodes with High JON/JOFF Ratios," Master Thesis, GIEE, NTU, Taipei, Taiwan, 2019. [32] Y.-C. Fu et al., "High mobility high on/off ratio CV dispersion-free Ge n-MOSFETs and their strain response," in 2010 International Electron Devices Meeting, 2010: IEEE, pp. 18.5. 1-18.5. 4. [33] C. C. Cheng et al., "Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- Al2O3 Gate Dielectric," IEEE Transactions on Electron Devices, vol. 56, no. 8, pp. 1681-1689, 2009. [34] H. Y. Yu, M. Ishibashi, J. H. Park, M. Kobayashi, and K. C. Saraswat, "p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si," IEEE Electron Device Letters, vol. 30, no. 6, pp. 675-677, 2009. [35] Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 3 ed. Cambridge: Cambridge University Press, 2021. [36] J. R. Troxell, A. P. Chatterjee, G. D. Watkins, and L. C. Kimerling, "Recombination-enhanced migration of interstitial aluminum in silicon," Physical Review B, vol. 19, no. 10, pp. 5336-5348, 05/15/ 1979. [37] H. Chen et al., "Dark current analysis in high-speed germanium pin waveguide photodetectors," Journal of Applied Physics, vol. 119, no. 21, 2016. [38] Y. Chuang, "High Electron Mobility in Strained GeSn n-MOSFETs by Chemical Vapor Deposition," PhD Thesis, GIEE, NTU, Taipei, Taiwan, 2021. [39] S. Yong Seok et al., "Implantation and activation of high concentrations of boron in Germanium," IEEE Transactions on Electron Devices, vol. 52, no. 11, pp. 2416-2421, 2005. [40] C.-Y. Liu, "Optical, Tunneling, and Carrier Transport Properties in GeSn Epitaxial Films," PhD Thesis, GIEE, NTU, Taipei, Taiwan, 2023. [41] D. J. Eaglesham and M. Cerullo, "Dislocation-free Stranski-Krastanow growth of Ge on Si(100)," Physical Review Letters, vol. 64, no. 16, pp. 1943-1946, 04/16/ 1990. [42] H. Ye and J. Yu, "Germanium epitaxy on silicon," (in eng), Sci Technol Adv Mater, vol. 15, no. 2, p. 024601, Apr 2014. [43] A. Campo, C. Cardinaud, and G. Turban, "Comparison of etching processes of silicon and germanium in SF6–O2 radio‐frequency plasma," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 13, pp. 235-241, 04/01 1995. [44] A. Kumar, W. H. Lee, and Y. L. Wang, "Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP," IEEE Transactions on Semiconductor Manufacturing, vol. 34, no. 2, pp. 177-184, 2021. [45] A. Chapotot et al., "Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures," Journal of Vacuum Science & Technology A, vol. 42, no. 1, 2024. [46] A. Czerwinski, E. Simoen, A. Poyai, and C. Claeys, "Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components," Journal of Applied Physics, vol. 94, no. 2, pp. 1218-1221, 2003. [47] R. Duffy et al., "Quantitative prediction of junction leakage in bulk-technology CMOS devices," Solid-State Electronics, vol. 54, no. 3, pp. 243-251, 2010. [48] V. V. N. Obreja and A. C. Obreja, "Activation energy values from the temperature dependence of silicon PN junction reverse current and its origin," physica status solidi (a), vol. 207, no. 5, pp. 1252-1256, 2010/05/01 2010. [49] V. V. N. Obreja, "On the leakage current of present-day manufactured semiconductor junctions," Solid-State Electronics, vol. 44, no. 1, pp. 49-57, 2000/01/01/ 2000. [50] K. Garidis, A. Abedin, A. Asadollahi, P.-E. Hellström, and M. Östling, "Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation," Electronics, vol. 9, no. 4. [51] R. N. Sajjad, W. Chern, J. L. Hoyt, and D. A. Antoniadis, "Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4380-4387, 2016. [52] G. Eneman et al., "Analysis of junction leakage in advanced germanium P+/n junctions," in ESSDERC 2007-37th European Solid State Device Research Conference, 2007: IEEE, pp. 454-457. [53] G. Hurkx, D. Klaassen, M. Knuvers, and F. O'hara, "A new recombination model describing heavy-doping effects and low-temperature behaviour," in International Technical Digest on Electron Devices Meeting, 1989: IEEE, pp. 307-310. [54] A. Schenk, "A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon," Solid-State Electronics, vol. 35, no. 11, pp. 1585-1596, 1992. [55] E. Simoen, F. De Stefano, G. Eneman, B. De Jaeger, C. Claeys, and F. Crupi, "On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {p}^{+}\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\hbox {n} $ Junctions," IEEE Electron Device Letters, vol. 30, no. 5, pp. 562-564, 2009. [56] G. Eneman et al., "Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$ n Junctions," IEEE Transactions on Electron Devices, vol. 55, no. 9, pp. 2287-2296, 2008. [57] D. Ohori et al., "Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam," Journal of Vacuum Science & Technology A, vol. 37, no. 2, 2019. [58] M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, "Dark current reduction of Ge photodetector by GeO 2 surface passivation and gas-phase doping," Optics Express, vol. 20, no. 8, pp. 8718-8725, 2012. [59] Y. Bao, K. Sun, N. Dhar, and M. C. Gupta, "Germanium pn junctions by laser doping for photonics/microelectronic devices," Ieee Photonics Technology Letters, vol. 26, no. 14, pp. 1422-1425, 2014. [60] Q. Durlin et al., "Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si: P as n-type region," Opto-Electronics Review, vol. 31, no. Special Issue, 2023. [61] P. Perlin et al., "Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes," Applied Physics Letters, vol. 69, no. 12, pp. 1680-1682, 1996. [62] M. Lee, H. Lee, K. M. Song, and J. Kim, "Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate," Nanomaterials, vol. 8, no. 7. [63] M. Mandurrino et al., "Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes," physica status solidi (a), vol. 212, no. 5, pp. 947-953, 2015/05/01 2015. [64] D. Yan, H. Lu, D. Chen, R. Zhang, and Y. Zheng, "Forward tunneling current in GaN-based blue light-emitting diodes," Applied Physics Letters, vol. 96, no. 8, p. 083504, 2010. [65] B. Anderson and R. Anderson, Fundamentals of semiconductor devices. McGraw-Hill, Inc., 2004. [66] C. Hu, Modern semiconductor devices for integrated circuits / Chenming Calvin Hu. Upper Saddle River, N.J: Prentice Hall, 2010. [67] J. P. Douglas, "Si/SiGe heterostructures: from material and physics to devices and circuits," Semiconductor Science and Technology, vol. 19, no. 10, p. R75, 2004/09/15 2004. [68] J. Aschner, C. Bittmann, W. Hare, and J. Kleimack, "A Double Diffused Silicon High‐Frequency Switching Transistor Produced by Oxide Masking Techniques," Journal of The Electrochemical Society, vol. 106, no. 5, p. 415, 1959. [69] B. T. Murphy, V. J. Glinski, P. A. Gary, and R. A. Pedersen, "Collector diffusion isolated integrated circuits," Proceedings of the IEEE, vol. 57, no. 9, pp. 1523-1527, 1969. [70] G. L. Patton, S. S. Iyer, S. L. Delage, S. Tiwari, and J. M. C. Stork, "Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy," IEEE Electron Device Letters, vol. 9, no. 4, pp. 165-167, 1988. [71] G. L. Patton et al., "75-GHz f/sub T/SiGe-base heterojunction bipolar transistors," IEEE Electron Device Letters, vol. 11, no. 4, pp. 171-173, 1990. [72] H. Osten, D. Knoll, B. Heinemann, H. Rucker, and B. Tillack, "Carbon doped SiGe heterojunction bipolar transistors for high frequency applications," in Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No. 99CH37024), 1999: IEEE, pp. 109-116. [73] H. Rucker et al., "SiGe:C BiCMOS technology with 3.6 ps gate delay," in IEEE International Electron Devices Meeting 2003, 8-10 Dec. 2003 2003, pp. 5.3.1-5.3.4. [74] B. Heinemann et al., "SiGe HBT with fx/fmax of 505 GHz/720 GHz," in 2016 IEEE International Electron Devices Meeting (IEDM), 2016: IEEE, pp. 3.1. 1-3.1. 4. [75] W. Shockley, M. Sparks, and G. K. Teal, "p-n Junction Transistors," Physical Review, vol. 83, no. 1, pp. 151-162, 07/01/ 1951. [76] D. A. Jenny, "A Germanium N-P-N Alloy Junction Transistor," Proceedings of the IRE, vol. 41, no. 12, pp. 1728-1734, 1953. [77] R. R. Law, C. W. Mueller, J. I. Pankove, and L. D. Armstrong, "A Developmental Germanium P-N-P Junction Transistor," Proceedings of the IRE, vol. 40, no. 11, pp. 1352-1357, 1952. [78] P. Gansauge, "Double diffused high-speed germanium transistors," IEEE Transactions on Electron Devices, vol. 15, no. 10, pp. 728-731, 1968. [79] H. Iwai, "History of junction technologies Commemorative talk for the 75th anniversary of the transistor," in 2023 21st International Workshop on Junction Technology (IWJT), 8-9 June 2023 2023, pp. 1-77. [80] W. Wang et al., "Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range," Optics express, vol. 25, no. 16, pp. 18502-18507, 2017. [81] M. Tanenbaum and D. E. Thomas, "Diffused Emitter and Base Silicon Transistors*," Bell System Technical Journal, vol. 35, no. 1, pp. 1-22, 1956. [82] H. Nii et al., "An 0.3-/spl mu/m Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication," IEEE Transactions on Electron Devices, vol. 46, no. 4, pp. 712-721, 1999. [83] E. F. Crabbe, B. S. Meyerson, J. M. C. Stork, and D. L. Harame, "Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors," in Proceedings of IEEE International Electron Devices Meeting, 5-8 Dec. 1993 1993, pp. 83-86. [84] Orner et al., "A 0.13/spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT," in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No. 03CH37440), 2003: IEEE, pp. 203-206. [85] M. Khater et al., "SiGe HBT technology with f/sub max//f/sub T/= 350/300 GHz and gate delay below 3.3 ps," in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004: IEEE, pp. 247-250. [86] H. Rücker, B. Heinemann, and A. Fox, "Half-terahertz sige bicmos technology," in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012: IEEE, pp. 133-136. [87] D. J. Paul, "Si/SiGe heterostructures: from material and physics to devices and circuits," Semiconductor science and technology, vol. 19, no. 10, p. R75, 2004. [88] L. Yuan, Y.-M. Zhang, Q.-W. Song, X.-Y. Tang, and Y.-M. Zhang, "Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base," Chinese Physics B, vol. 24, no. 6, p. 068502, 2015. [89] S. Mohammadi and C. Selvakumar, "Analysis of BJT's, pseudo-HBT's, and HBT's by including the effect of neutral base recombination," IEEE Transactions on Electron Devices, vol. 41, no. 10, pp. 1708-1715, 1994. [90] J. R. Hayes, F. Capasso, R. J. Malik, A. C. Gossard, and W. Wiegmann, "Elimination of the emitter/collector offset voltage in heterojunction bipolar transistors," in 1983 International Electron Devices Meeting, 5-7 Dec. 1983 1983, pp. 686-688. [91] B. Mazhari, G. B. Gao, and H. Morkoç, "Collector-emitter offset voltage in heterojunction bipolar transistors," Solid-State Electronics, vol. 34, no. 3, pp. 315-321, 1991/03/01/ 1991. [92] J. D. Cressler, "Silicon-Germanium heterojunction bipolar transistor," in Device and Circuit Cryogenic Operation for Low Temperature Electronics: Springer, 2003, pp. 69-84. [93] J. Zhang, A. Liu, H. Xing, and Y. Yang, "Study on surface leakage current at sidewall in InP-based avalanche photodiodes with mesa structure," AIP Advances, vol. 12, no. 3, 2022. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96002 | - |
| dc.description.abstract | 6G技術運用的頻段將邁向兆赫茲波段，高頻元件的性能與可靠性將成為關鍵挑戰。矽鍺異質接面雙極性電晶體在射頻前端電路中的放大器扮演重要的角色，因為它有較小的寄生電阻、寄生電容，也沒有氧化層/半導體界面，因此具有高增益、高操作頻率、低1/f雜訊等特性。鍺錫材料有高電子和電洞遷移率，是具有前景的超大型積體電路技術材料，然而其在異質接面雙極性電晶體中的應用尚未有深入的研究。本論文探討鍺PN二極體和雙極性接面電晶體，以及矽/矽鍺NPN異質接面雙極性電晶體的電性，也探討了室溫至低溫(絕對溫度4 K)的電流傳輸機制。
針對鍺PN二極體，探討了離子佈植製作的p+/n二極體和原位摻雜製作的n+/p二極體。p+/n二極體有兩種不同的n型摻雜濃度，離子佈植的劑量介於2 × 1014 cm-2到2 × 1015 cm-2之間，快速熱退火溫度在350 °C至550 °C之間，微波退火功率從1,050 W到1,750 W。低n型二極體受製程方法的影響較小，電流開關比約為104，理想因子介於1.34到1.43之間。高n型二極體的電流開關比約為103，理想因子介於1.25到1.51之間。原位摻雜鍺n+/p二極體具有相同的n型摻雜濃度(5 × 1019 cm-2)，低p型和高p型二極體的理想因子分別為1.51和1.93，電流開關比分別為102和100。低溫量測結果顯示較高的摻雜會促使缺陷輔助穿隧效應，因此電流隨溫度的改變較小，且低溫下的理想因子顯著增大。 針對NPN矽鍺異質接面雙極性電晶體，本實驗製作並探討了三種不同基極厚度的電晶體。由於電子-電洞復合和/或陷阱輔助隧道電流的減少，較薄基極的電晶體有更高的增益，基極厚度為70奈米的元件具有接近500的直流增益和僅0.12 V的失調電壓。基-射極和基-集極二極體的理想因子分別為1.18和1.26，電流開關比分別為105與106。鍺NPN雙極性接面電晶體幾乎沒有電流增益，失調電壓為0.3 V，基-射極和基-集極二極體的電流開關比為101，其理想因子接近2，顯示強烈的生成、復合或缺陷輔助穿隧電流可能主導了接面中的電流傳輸。最後，模擬結果顯示Ge/Ge0.92Sn0.08異質接面雙極性電晶體可以實現約為3,000的極高增益。 | zh_TW |
| dc.description.abstract | 6G technology is expected to utilize frequency bands in the terahertz range, making the performance and reliability of high-frequency components key challenges. Silicon-germanium heterojunction bipolar transistors (HBTs) play an important role as amplifiers in RF front-end circuits because of their lower parasitic resistance and capacitance, and no oxide/semiconductor interface to achieve high gain, high operating frequency, and low 1/f noise. Germanium-tin is a promising material for VLSI technology due to its high electron and hole mobility, however its application in HBT is not yet fully investigated. This thesis focuses on the electrical characteristics of Ge-based PN diodes and bipolar junction transistors (BJTs), and Si/SiGe NPN HBTs. Electrical transport mechanisms are characterized at room temperature to cryogenic temperatures (4 K).
For Ge PN diodes, ion-implantation is used to form p+/n diodes and in-situ epitaxy is performed to form n+/p diodes. P+/n diodes with two different levels of n-type doping concentration are studied. The dose of ion implantation is from 2 × 1014 cm-2 to 2 × 1015 cm-2. The rapid thermal annealing temperature is between 350 °C and 550 °C, and the microwave annealing power is from 1,050 W to 1,750 W to activate the carriers. Diodes with low n-type doping are less affected by the processing methods, with a current on/off ratio of about 104 and an ideality factor between 1.34 and 1.43. Diodes with high n-type doping has a current on/off ratio of about 103 and an ideality factor between 1.25 and 1.51. The in-situ doped Ge n+/p diodes with the same n-type doping level of 5 × 1019 cm-3 have ideality factors of 1.51 and 1.93, with current on/off ratios of 102 and 100 for low and high p-type regions, respectively. Cryogenic results show that a higher doping concentration promotes defect-assisted tunneling, so the current is less dependent on temperature and the ideality factor is much larger at lower temperatures. NPN SiGe HBTs with three different base thicknesses are fabricated and characterized. A thinner base results in a higher gain due to reduced electron-hole recombination and/or trap-assisted tunneling current. The device with a base thickness of 70 nm has a DC gain close to 500 and an offset voltage of only 0.12 V. The base-emitter and base-collector diode ideality factors are 1.18 and 1.26, with current on/off ratios of 105 and 106, respectively. For Ge NPN BJTs, there is almost no current gain with an offset voltage of 0.3 V. The base-emitter and base-collector diodes’ current on-off ratios are 101, and their ideality factors are close to 2, which suggests that strong generation, recombination, or defect-assisted tunneling could dominate the current transport in the junctions. Finally, the simulation results for Ge/Ge0.92Sn0.08 HBTs show that a very high gain of ~ 3,000 is achievable. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-09-25T16:33:41Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-09-25T16:33:41Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 誌謝 i
摘要 ii Abstract iii 目次 v 圖次 vii 表次 xiii 第 1 章 引言 1 1.1 研究動機—高頻元件 1 1.2 異質接面雙極性電晶體 4 1.3 論文架構 6 第 2 章 鍺PN二極體 8 2.1 文獻回顧 8 2.2 離子佈植之鍺P+/N二極體 12 2.2.1 TCAD模擬 12 2.2.2 製程流程與材料分析 14 2.2.3 室溫電性分析 17 2.2.4 變溫電性分析 21 2.3 原位摻雜之鍺N+/P二極體 28 2.3.1 製程流程與材料分析 28 2.3.2 室溫電性分析 29 2.3.3 變溫電性分析 31 2.4 小結 32 第 3 章 雙極性接面電晶體 34 3.1 簡介 34 3.1.1 原理 34 3.1.2 文獻回顧 38 3.2 TCAD元件模擬 45 3.2.1 矽鍺異質雙極性接面電晶體 45 3.2.2 鍺雙極性接面電晶體 48 3.3 製程與電性分析 49 3.3.1 製程流程與材料分析 49 3.3.2 室溫電性分析 51 3.3.3 變溫電性量測 55 3.4 鍺錫異質雙極性接面電晶體TCAD模擬 59 3.4.1 鍺錫 vs. 鍺雙極性接面電晶體 59 3.4.2 鍺/鍺錫/鍺 vs. 鍺雙極性接面電晶體 61 3.5 小結 61 第 4 章 結論及未來工作 63 4.1 結論 63 4.2 未來工作 64 參考文獻 65 | - |
| dc.language.iso | zh_TW | - |
| dc.title | 四族異質結構之PN接面與雙極性電晶體 | zh_TW |
| dc.title | PN Junctions and Bipolar Junction Transistors on Group-IV Heterostructures | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 羅廣禮;張子璿 | zh_TW |
| dc.contributor.oralexamcommittee | Guang-Li Luo;Tzu-Hsuan Chang | en |
| dc.subject.keyword | PN二極體,離子佈植,原位摻雜,雙極性接面電晶體,異質接面雙極性電晶體,缺陷輔助穿隧, | zh_TW |
| dc.subject.keyword | PN diodes,ion implantation,in-situ doping,bipolar junction transistor (BJT),heterojunction bipolar transistor (HBT),trap-assisted tunneling, | en |
| dc.relation.page | 76 | - |
| dc.identifier.doi | 10.6342/NTU202402555 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-09-09 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 電子工程學研究所 | - |
| 顯示於系所單位： | 電子工程學研究所 | |
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