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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張嘉升 | zh_TW |
| dc.contributor.advisor | Chia-Seng Chang | en |
| dc.contributor.author | 楊昇翰 | zh_TW |
| dc.contributor.author | Sheng-Han Yang | en |
| dc.date.accessioned | 2024-08-16T16:15:03Z | - |
| dc.date.available | 2024-08-17 | - |
| dc.date.copyright | 2024-08-16 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-08-05 | - |
| dc.identifier.citation | Avouris, P. (2010). Graphene: electronic and photonic properties and devices. Nano letters, 10(11), 4285-4294.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94473 | - |
| dc.description.abstract | 二維材料異質結構物理性質的高度可塑性使其具備廣泛的應用前景，而金屬奈米粒子與二維材料組成的異質結構在光電領域、生物醫學和能源轉換等領域展現出巨大的應用潛力。本研究旨在探討金奈米粒子(AuNPs)在二維二硫化鎢(WS2)表面的成長行為、結晶型態以及溫度對凡得瓦壘晶所造成的影響。
我們以超高真空穿透式電子顯微鏡(UHV-TEM)結合超高真空電子束蒸鍍器，藉由控制蒸鍍時間及溫度，對AuNPs在懸空二維WS2表面的原位生長進行系統性控制，並記錄臨場生長過程。最後以影像分析軟體對其較宏觀的成長行為與微觀的結晶型態進行了深度的分析，並與理論所模擬之結果進行對應。 實驗結果顯示，溫度對AuNPs在二維WS2表面的凡得瓦壘晶具有顯著的影響。在室溫條件下，AuNPs傾向以凡得瓦壘晶的二維生長，呈現三角形或六邊形的奈米島；高溫條件下，AuNPs則傾向以三維生長，呈半球狀的奈米顆粒。我們也探討了溫度對AuNPs/ WS2異質結構介面晶格應變效應的影響，根據理論與實驗的比較，凡得瓦壘晶中的晶格應變效應並不顯著，然而溫度對結晶形態的影響仍導致異質結構介面的晶格應變出現些微差異。此外我們也觀察到了AuNPs/ WS2異質結構中因原子間距差異所引起的摩爾紋。在光電導特性的測量方面，我們嘗試了多種研究方法，但在過程中面臨了接觸電阻與量測穩定性等挑戰，需要進一步克服以提高測量精度和穩定性。 總結來說，本研究深入的地探討了室溫及高溫下AuNPs於懸浮二維WS2表面凡得瓦壘晶的成長行為及其結晶型態。這些結果不僅有助於理解異質結構的成長機制，還為光電器件的設計和製作提供了有價值的參考。此外，本研究中所遇到的光電導測量挑戰也為未來研究提供了改進方向。 | zh_TW |
| dc.description.abstract | The high tunability of the physical properties of two-dimensional (2D) material heterostructures endows them with broad application prospects. Heterostructures composed of metal nanoparticles and 2D materials exhibit significant potential in the fields of optoelectronics, biomedicine, and energy conversion. This study aims to investigate the growth behavior, crystalline morphology, and the effect of temperature on the van der Waals epitaxy of gold nanoparticles (AuNPs) on the surface of 2D tungsten disulfide (WS2).
Using an ultra-high vacuum transmission electron microscope (UHV-TEM) combined with an ultra-high vacuum electron beam evaporator, we systematically controlled the in situ growth of AuNPs on suspended 2D WS2 surfaces by regulating the deposition time and temperature, and recorded the real-time growth process. Subsequently, we conducted an in-depth analysis of the macroscopic growth behavior and microscopic crystalline morphology using image analysis software, and compared the results with theoretical simulations. The experimental results show that temperature has a significant impact on the van der Waals epitaxy of AuNPs on 2D WS2 surfaces. At room temperature, AuNPs tend to grow in a 2D manner, forming triangular or hexagonal nanostructures; at high temperatures, AuNPs tend to grow in a 3D manner, forming hemispherical nanoparticles. We also explored the effect of temperature on the lattice strain at the AuNPs/WS2 heterostructure interface. Theoretical and experimental comparisons indicate that the lattice strain in the van der Waals epitaxy is not significant; however, the influence of temperature on the crystalline morphology still leads to slight differences in the lattice strain at the heterostructure interface. Additionally, we observed moiré patterns caused by the atomic spacing differences in the AuNPs/WS2 heterostructure. In terms of photoconductivity measurements, we tried various research methods but encountered challenges related to contact resistance and measurement stability, which need to be further addressed to improve measurement accuracy and stability. In summary, this study thoroughly investigates the growth behavior and crystalline morphology of AuNPs on suspended 2D WS2 surfaces under room and high-temperature conditions. These results not only contribute to understanding the growth mechanisms of heterostructures but also provide valuable references for the design and fabrication of optoelectronic devices. Furthermore, the challenges encountered in photoconductivity measurements in this study provide directions for future research improvements. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-08-16T16:15:03Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-08-16T16:15:03Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 目次
誌謝 I 中文摘要 III 英文摘要 V 目次 VII 圖次 X 表次 XVIII 第1章 簡介 1 1.1 二維材料 1 1.1.1 石墨烯 1 1.2 二維過渡金屬硫化物 1 1.2.1 二維二硫化鎢 2 1.2.2 晶體結構 2 1.2.3 電子能帶結構 3 1.2.4 合成方法 5 1.2.5 轉移方法 10 第2章 文獻回顧 13 2.1 二維材料的異質結構 13 2.1.1 金屬奈米粒子與二維材料之異質結構 14 2.1.2 凡得瓦壘晶 14 2.1.3 金奈米粒子的成長行為 14 2.2 金屬奈米粒子與二維材料的電子能帶結構調控 16 2.2.1 蕭特基能障 16 2.2.2 局域表面電漿共振效應 17 2.3 研究目標 19 第3章 實驗設計 20 3.1 實驗儀器 20 3.1.1 超高真空系統 22 3.1.2 電子源與電磁透鏡系統 23 3.1.3 超高真空電子束蒸鍍器 24 3.1.4 奈米步進系統 25 3.2 實驗方法 26 3.2.1 奈米金屬粒子成長研究方法 26 3.3 樣品製備步驟 30 3.3.1 二硫化鎢生長品質分析 30 3.3.2 拉曼光譜對二維材料的層數分析 31 3.3.3 二維材料的轉移 33 第4章 實驗結果與討論 37 4.1 金屬粒子於二硫化鎢成長行為 37 4.1.1 金奈米粒子在不同條件下的平均成長行為 39 4.1.2 黏附效應對金奈米粒子沉積的影響 41 4.1.3 金奈米粒子於凡得瓦表面的成核機制 43 4.1.4 金屬粒子於凡得瓦表面的成核形貌 48 4.2 二維二硫化鎢與金奈米粒子TEM分析 52 4.2.1 單層二硫化鎢TEM分析 52 4.2.2 金奈米粒子於非晶相碳膜表面TEM分析 53 4.3 金屬粒子於二硫化鎢表面的結晶型態 55 4.3.1 介面汙染物對凡得瓦壘晶電子成長的影響 55 4.3.2 溫度對凡得瓦壘晶所造成的結晶型態影響 56 4.3.3 溫度對AuNPs/ WS2異質結構的晶格應變效應的影響 61 4.3.4 AuNPs/ WS2異質結構的摩爾紋 63 4.3.5 電子束對AuNPs/ WS2異質結構的影響 66 第5章 AuNPs/ WS2異質結構的光電導特性 67 5.1 研究方法 67 5.1.1 AFM懸臂電性量測研究方法 67 5.1.2 傾斜銅網電性量測研究方法 71 5.2 電性量測系統建置 73 5.2.1 STM金探針製備 73 5.2.2 電泳法排列奈米碳管 75 5.2.3 奈米碳管結合金探針 77 5.2.4 傾斜銅網之電性量測 80 5.3 AuNPs與WS2異質結構之電性量測 84 第6章 結論 85 第7章 參考文獻 86 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 穿透式電子顯微鏡 | zh_TW |
| dc.subject | 成長行為 | zh_TW |
| dc.subject | 結晶型態 | zh_TW |
| dc.subject | 二硫化鎢 | zh_TW |
| dc.subject | 二維材料 | zh_TW |
| dc.subject | 金奈米粒子 | zh_TW |
| dc.subject | 異質結構 | zh_TW |
| dc.subject | Growth Behavior | en |
| dc.subject | Gold Nanoparticles | en |
| dc.subject | Two-Dimensional Materials | en |
| dc.subject | Tungsten Disulfide | en |
| dc.subject | Heterostructures | en |
| dc.subject | Crystalline Morphology | en |
| dc.subject | Transmission Electron Microscope | en |
| dc.title | 二維二硫化鎢上金奈米粒子生長之研究 | zh_TW |
| dc.title | Study of Growth of Gold Nanoparticles on Two-dimensional Tungsten Disulfide | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 蘇維彬;邱雅萍 | zh_TW |
| dc.contributor.oralexamcommittee | Wei-Bin Su;Ya-Ping Chiu | en |
| dc.subject.keyword | 金奈米粒子,二維材料,二硫化鎢,異質結構,成長行為,結晶型態,穿透式電子顯微鏡, | zh_TW |
| dc.subject.keyword | Gold Nanoparticles,Two-Dimensional Materials,Tungsten Disulfide,Heterostructures,Growth Behavior,Crystalline Morphology,Transmission Electron Microscope, | en |
| dc.relation.page | 89 | - |
| dc.identifier.doi | 10.6342/NTU202403276 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-08-09 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 物理學系 | - |
| dc.date.embargo-lift | 2027-08-05 | - |
| 顯示於系所單位： | 物理學系 | |
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