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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94100完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 姜昌明 | zh_TW |
| dc.contributor.advisor | Chang-Ming Jiang | en |
| dc.contributor.author | 張家維 | zh_TW |
| dc.contributor.author | Chia-Wei Chang | en |
| dc.date.accessioned | 2024-08-14T16:41:29Z | - |
| dc.date.available | 2024-08-15 | - |
| dc.date.copyright | 2024-08-14 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-08-05 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94100 | - |
| dc.description.abstract | 光電化學 (PEC) 水分解利用半導體材料將太陽能用以分解水轉換為氫氣，是一個有前景的能量儲存方式。在過渡金屬氮化物中，五氮化三鉭 (Ta3N5) 因其比過度金屬氧化物 (Transition metal oxides, TMOs) 好的載子傳輸性質、約2.1電子伏特的能隙及合適進行水氧化反應之能帶位置而成為有前景的光陽極候選材料，其理論太陽能轉氫氣之效率 (solar-to-hydrogen efficiency, STH) 可以達到15.9%。近期的研究中，雖然Ta3N5光陽極系統的效率也已經趨近理論值所預期，但其缺點是因大量使用鉭金屬所導致的較差的材料使用效率。因此，本研究中利用矽基板作為導電層以磁控反應濺鍍法 (reactive magnetron sputtering) 合成介穩態三氮化二鉭 (Ta2N3) 作為前驅物，並將前驅物以氨氣燒結合成Ta3N5光陽極。首先，本研究利用氨氣燒結之溫度調控表面缺陷含量，特別是在Ta3N5能帶結構中做為電子電洞複合中心的晶格中的氮空缺 (NV) 及低價態的鉭陽離子 (Ta3+) 可在燒結溫度820°C 並持溫三小時的情況下在表面消除。除此之外，使用Ta2N3而非Ta2O5作為Ta3N5製備之前驅物優點便在於，以Ta2N3作為前驅物時會在薄膜塊材之相組成中引進低價態的氮化鉭族群如Ta2N及Ta5N6，這些低價態的氮化鉭族群可以有效的增加Ta3N5光陽極的載子傳輸性質。在黃血鹽 (K4[FeCN6]) 作為電洞捕捉劑 (hole scavenger) 存在於電解液中時，沉積在高度砷參雜之n型矽 (111) 基材上生長之Ta3N5光陽極有著最好的光電化學活性，其光電流密度可達3.86 mA/cm2，並表現出對可逆氫電極0.48伏 (VRHE) 之起始電位，這樣的表現優於使用其他參雜及方向之矽基材系統。這樣的差異最主要來自於使用不同參雜及不同方向性之矽基材時其與Ta3N5之異質接面的差異造成，並可用光電化學阻抗譜 (photoelectrochemical impedance spectroscopy, PEIS) 分析驗證其造成之光電化學活性差異。沉積在磷參雜之n型矽 (100) 基材上之Ta3N5光陽極會因兩個半導體材料相接形成之n-n異質接面 (n-n heterojunction)，而產生光生電子電洞堆積在n-n異質接面之間，產生大量的漏電流消耗光生載子並降低可獲得的光電流密度。本研究之結果近一步驗證了藉由更改氮化前驅物及使用矽基板作為導電層可以完整地建立一個更有效利用鉭金屬的光陽極合成平台，並可以做為之後以矽基板作為導電層時進一步改善光電化學活性的基礎。 | zh_TW |
| dc.description.abstract | Photoelectrochemical (PEC) energy conversion is a promising pathway to store excess energy in the form of chemical fuels. Ta3N5 represents a promising photoanode candidate owing to its better charge transport properties compared to transition metal oxides (TMOs), theoretical its ~ 2.1 eV band gap, suitable band energetics for oxygen evolution reaction (OER), and a theoretical solar-to-hydrogen (STH) efficiency of 15.9%. As far, as the Ta3N5-based photoanode system has almost achieved its theoretical limitation but with the outcome of inefficient material usage caused by the massive usage of tantalum metal. Herein, Ta3N5 thin films were fabricated on n+-Si(111) substrate through nitridation of the metastable Ta2N3 films synthesized via reactive magnetron sputtering. To begin with, the surface composition, especially, the deep-trap sates in the Ta3N5 system, namely nitrogen-vacancy (VN), and low-valence Ta cations (Ta3+) can be effectively tuned by precisely controlling annealing temperature. A defect-free surface composition can be achieved by annealing at 820°C for 3 hours. Aside from the surface composition, the incorporation of Ta2N3 as a nitridation precursor can effectively introduce low-valence Ta2N and Ta5N6 content in the bulk composition that facilitates the carrier transport of Ta3N5 photoanode system compared to Ta3N5 fabricated from Ta2O5. In the presence of K4[Fe(CN)6] as a hole scavenger, the Ta3N5/n+-Si(111) photoanode demonstrated an onset potential at 0.48 VRHE and 3.86 mA/cm2 photocurrent density at 1.23 VRHE, outperforming comparable films grown on the other two substrates. Such differences in PEC performance were attributed to the heterojunction between Ta3N5 and Si and verified by photoelectrochemical impedance spectroscopy (PEIS). This heterojunction dominated the carrier dynamics as the leakage current across the heterojunction would consume the photogenerated holes and consequently diminish the photocurrent density. The present study reveals the importance of constructing a platform for efficient material usage of the Ta3N5-based photoanode system via the incorporation of silicon as a conductive substrate and the metastable Ta2N3 as nitridation precursor films, which can serve as a foundation for further improvement of the PEC performance of silicon-based Ta3N5 photoanode system. | en |
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| dc.description.provenance | Made available in DSpace on 2024-08-14T16:41:29Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員會審定書 ii
Acknowledgments iii 中文摘要 v Abstract vii Table of Contents ix List of Abbreviations xii List of Figures xiv List of Table xix Chapter 1. Introduction 1 1.1 Motivation 1 1.2 Photoelectrochemical Energy Conversion 3 1.2.1 Photoelectrochemical Water Splitting 4 1.2.2 Configurations of PEC Energy Conversion Devices 4 1.2.3 Selection Criteria for Photoelectrode Material 6 1.3 Transition Metal Nitride 10 1.3.1 Advantages of Nitrides 10 1.3.2 Challenges in Nitride Synthesis 11 1.3.3 Synthesis Strategies 13 1.4 Tantalum Nitride as Photoanode 15 1.4.1 TaN 15 1.4.2 Ta2N3 16 1.4.3 Ta3N5 19 1.4.4 Challenges of Ta3N5-based Photoelectrode 21 1.4.5 Advantages of Ta3N5 over Oxide-Based Photoanodes 26 Chapter 2. Experimental Method 30 2.1 Reactive Magnetron Sputtering 30 2.1.1 Physics of Sputtering Process 31 2.1.2 Magnetron Sputtering 37 2.1.3 Deposition Apparatus 42 2.2 Structure Characterization 45 2.2.1 X-ray Diffraction 45 2.2.2 Raman Spectroscopy 52 2.3 Ultraviolet-Visible Spectroscopy 55 2.4 Photoelectron Spectroscopy 59 2.4.1 X-ray Photoelectron Spectroscopy 60 2.4.2 Ultraviolet Photoelectron Spectroscopy 62 2.5 Scanning Electron Microscopy 63 2.6 Photoelectrochemical Characterization 66 2.6.1 Linear Sweep Voltammetry 66 2.6.2 Chronoamperometry 70 2.7 Electrochemical Impedance Spectroscopy 70 2.7.1 Impedance of Electronic Components in AC Configuration 71 2.7.2 Electrochemical Equivalent Circuit Components 72 Chapter 3. Establishing and Optimization of Ta3N5 Growth Condition 76 3.1 Deposition Procedure of Metastable Ta2N3 as Nitridation Precursor 77 3.1.1 Influence of Gas Atmosphere 79 3.1.2 Influence of Deposition Temperature 82 3.1.3 Influence of Deposition Time 84 3.1.4 Influence of Sputtering Power 86 3.1.5 Influence of Process Pressure 88 3.2 Reproducibility of Ta2N3 Deposition 91 3.2.1 Reproducibility of Ta2N3 Deposition Using 5 mTorr Process Pressure 92 3.2.2 Re-examination of Gas Atmosphere with a Low Background Oxygen Level 94 3.2.3 Reproducibility of Ta2N3 Deposition Using 10 mTorr Process Pressure 95 3.3 Characterization of Optimized Ta2N3 97 3.3.1 Structure Characterizations 98 3.3.2 XPS Measurements 102 3.3.3 Optical Properties 106 3.4 Converting Ta2N3 to Ta3N5 108 3.4.1 Effect of Nitridation Duration 110 3.4.2 Effect of Nitridation Temperature 113 3.5 Characterization of Optimized Ta3N5 122 3.5.1 Structural Characterization 123 3.5.2 XPS Measurements 127 3.5.3 UPS Measurements 128 3.5.4 Optical Properties 130 Chapter 4. Photoelectrochemical Performance of Ta3N5 132 4.1 Effect of Annealing Temperatures 133 4.2 Effect of Annealing Dwell Time 135 4.3 Effect of Different Conductive Silicon Substrates 139 4.3.1 Linear Sweep Voltammetry 140 4.3.2 Proposed Band Alignment 142 4.3.3 Impedance Analysis for Heterojunction Characterization 144 4.4 Incorporation of NiFeOx for Photoelectrochemical Water Splitting 153 4.4.1 Spin-Coating Procedure 154 4.4.2 Optimization of Spin-Coating Procedure 154 4.4.3 Stability Test 157 Chapter 5. Fabrication of Ta3N5 Photoanode by Different Precursors 160 5.1 Intentional Introduction of Oxygen Impurities in Ta2N3 Precursor Films 161 5.1.1 Deposition Procedure 161 5.1.2 Effect of Oxygen Flow Rate on the Quality of Ta2N3 162 5.1.3 Nitridation of Oxygen-Doping Precursor Films 165 5.1.4 PEC Performance of Ta3N5 Photoanodes Converted from Oxygen-Doping Precursors 170 5.2 Fabrication of Tantalum Oxide as Nitridation Precursor 173 5.2.1 Deposition Procedure 173 5.2.2 Characterization of Tantalum Oxide with Different Deposition Times 175 5.2.3 PEC Performance of Ta3N5 Converted from Various Temperatures 177 5.2.4 Ta3N5 Photoanodes with Different Thicknesses 179 Chapter 6. Outlook and Conclusion 184 Reference 187 | - |
| dc.language.iso | en | - |
| dc.subject | 光電化學水分解 | zh_TW |
| dc.subject | 五氮化三鉭光陽極 | zh_TW |
| dc.subject | 過渡金屬氮化物 | zh_TW |
| dc.subject | 磁控反應濺鍍 | zh_TW |
| dc.subject | Ta3N5 Photoanode | en |
| dc.subject | Transition Metal Nitride | en |
| dc.subject | Photoelectrochemical Water Splitting | en |
| dc.subject | Reactive Magnetron Sputtering | en |
| dc.title | 製備高品質氮化鉭光陽極於光電化學之應用 | zh_TW |
| dc.title | Fabrication of High-Quality Ta3N5 Photoanode for Photoelectrochemical Application | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 廖尉斯;王迪彥 | zh_TW |
| dc.contributor.oralexamcommittee | Wei-Ssu Liao;Di-Yan Wang | en |
| dc.subject.keyword | 光電化學水分解,五氮化三鉭光陽極,過渡金屬氮化物,磁控反應濺鍍, | zh_TW |
| dc.subject.keyword | Photoelectrochemical Water Splitting,Ta3N5 Photoanode,Transition Metal Nitride,Reactive Magnetron Sputtering, | en |
| dc.relation.page | 197 | - |
| dc.identifier.doi | 10.6342/NTU202403464 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-08-09 | - |
| dc.contributor.author-college | 理學院 | - |
| dc.contributor.author-dept | 化學系 | - |
| 顯示於系所單位： | 化學系 | |
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