請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91262
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊志忠 | zh_TW |
dc.contributor.advisor | Chih-Chung Yang | en |
dc.contributor.author | 陳威呈 | zh_TW |
dc.contributor.author | Wei-Cheng Chen | en |
dc.date.accessioned | 2023-12-20T16:12:14Z | - |
dc.date.available | 2023-12-21 | - |
dc.date.copyright | 2023-12-20 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-10-11 | - |
dc.identifier.citation | 1. Huang, C.F.; Tang, T.Y.; Huang, J.J.; Shiao, W.Y.; Yang, C.C.; Hsu, C.W.; Chen, L.C. Prestrained effect on the emission properties of InGaN/GaN quantum-well structures. Appl. Phys. Lett. 2006, 89, 051913.
2. Lee, S.R.; Koleske, D.D.; Cross, K.C.; Floro, J.A.; Waldrip, K.E.; Wise, A.T.; Mahajan, S. In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures. Appl. Phys. Lett. 2004, 85, 6164-6166. 3. Chen, D.; Xiao, H.; Han, J. Nanopores in GaN by electrochemical anodization in hydrofluoric acid formation and mechanism. J. Appl. Phys. 2012, 112, 064303. 4. Griffin, P.H.; Oliver, R.A. Porous nitride semiconductors reviewed. J. Phys. D: Appl. Phys. 2020, 53, 383002. 5. Schwab, M.J.; Chen, D.; Han, J.; Pfefferle, L.D. Aligned mesopore arrays in GaN by anodic etching and photoelectrochemical surface etching. J. Phys. Chem. C 2013, 117, 16890-16895. 6. Schwab, M.J.; Han, J.; Pfefferle, L.D. Neutral anodic etching of GaN for vertical or crystallographic alignment. Appl. Phys. Lett. 2015, 106, 241603. 7. Tseng, W.J.; van Dorp, D.H.; Lieten, R.R.; Vereecken, P.M.; Borghs, G. Anodic etching of n-GaN epilayer into porous GaN and its photoelectrochemical properties. J. Phys. Chem. C 2014, 118, 29492-29498. 8. Radzali, R.; Zainal, N.; Yam, F.K.; Hassan, Z. Characteristics of porous GaN prepared by KOH photoelectrochemical etching. Mater. Res. Innovations 2014, 18, S6-412-416. 9. Hsu, W.J.; Chen, K.T.; Huang, W.C.; Wu, C.J.; Dai, J.J.; Chen, S.H.; Lin, C.F. InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer. Opt. Express 2016, 24, 11601-11610. 10. Li, Y.; Wang, C.; Zhang, Y.; Hu, P.; Zhang, S.; Du, M.; Su, X.; Li, Q.; Yun, F. Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED. Photon. Res. 2020, 8, 806-811. 11. Soh, C.B.; Tay, C.B.; Tan, R.J.N.; Vajpeyi, A.P.; Seetoh, I.P.; Ansah-Antwi, K.K.; Chua, S.J. Nanopore morphology in porous GaN template and its effect on the LEDs emission. J. Phys. D: Appl. Phys. 2013, 46, 365102. 12. Wurm, C.; Collins, H.; Hatui, N.; Li, W.; Pasayat, S.; Hamwey, R.; Sun, K.; Sayed, I.; Khan, K.; Ahmadi, E.; Keller, S.; Mishra, U. Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE. J. Appl. Phys. 2022, 131, 015701. 13. Pasayat, S.S.; Gupta, C.; Wong, M.S.; Ley, R.; Gordon, M.J.; DenBaars, S.P.; Nakamura, S.; Keller, S.; Mishra, U. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays. Appl. Phys. Express 2021, 14, 011004. 14. Huang, S.; Zhang, Y.; Leung, B.; Yuan, G.; Wang, G.; Jiang, H.; Fan, Y.; Sun, Q.; Wang, J.; Xu, K.; Han, J. Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films. ACS Appl. Mater. Interfaces 2013, 5, 11074-11079. 15. Zhang, Y.; Sun, Q.; Leung, B.; Simon, J.; Lee, M.L.; Han, J. The fabrication of large-area, free-standing GaN by a novel nanoetching process. Nanotechnology 2011, 22, 045603. 16. Kang, J.H.; Ebaid, M.; Lee, J.K.; Jeong, T.; Ryu, S.W. Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter. ACS Appl. Mater. Interfaces 2014, 6, 8683-8687. 17. Yang, H.; Xi, X.; Yu, Z.; Cao, H.; Li, J.; Lin, S.; Ma, Z.; Zhao, L. Light modulation and water splitting enhancement using a composite porous GaN structure. ACS Appl. Mater. Interfaces 2018, 10, 5492-5497. 18. Maeda K.; Domen, K. Photocatalytic water splitting: Recent progress and future challenges. J. Phys. Chem. Lett. 2010, 1, 2655-2661. 19. Zhang, C.; Park, S.H.; Chen, D.; Lin, D.W.; Xiong, W.; Kuo, H.C.; Lin, C.F.; Cao, H.; Han, J. Mesoporous GaN for photonic engineering highly reflective GaN mirrors as an example. ACS Photon. 2015, 2, 980-986. 20. Lin, C.F.; Zhang, Y.T.; Wang, C.J.; Chen, Y.Y.; Shiu, G.Y.; Ke, Y.; Han, J. InGaN resonant microcavity with n+-porous-GaN/p+-GaN tunneling junction. IEEE Electron Dev. Lett. 2021, 42, 1631-1633. 21. Zhang, M.; Liu, Y.; Wang, J.; Tang, J. Photodeposition of palladium nanoparticles on a porous gallium nitride electrode for nonenzymatic electrochemical sensing of glucose. Microchimica Acta 2019, 186, DOI: 10.1007/s00604-018-3172-0. 22. Najar, A.; Gerland, M.; Jouiad, M. Porosity-induced relaxation of strains in GaN layers studied by means of microindentation and optical spectroscopy. J. Appl. Phys. 2012, 111, 093513. 23. Anderson, R.; Cohen, D.; Zhang, H.; Trageser, E.; Palmquist, N.; Nakamura, S.; DenBaars, S. Nano-porous GaN cladding and scattering loss in edge emitting laser diodes. Opt. Express 2022, 30, 2759-2767. 24. Ke, Y.; Wang, C.J.; Shiu, G.Y.; Chen, Y.Y.; Lin, Y.S.; Chen, H.; Han, J.; Lin, C.F. Polarization properties of InGaN vertical-cavity surface-emitting laser with pipe distributed Bragg reflector. IEEE Transact. Electron Dev. 2022, 69, 201-204. 25. Elafandy, R.T.; Kang, J.H.; Mi, C.; Kim, T.K.; Kwak, J.S.; Han, J. Study and application of birefringent nanoporous GaN in the polarization control of blue vertical-cavity surface-emitting lasers. ACS Photon. 2021, 8, 1041-1047. 26. Pasayat, S.S.; Hatui, N.; Li, W.; Gupta, C.; Nakamura, S.; Denbaars, S.P.; Keller, S.; Mishra, U.K. Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN. Appl. Phys. Lett. 2020, 117, 062102. 27. Pasayat, S.S.; Gupta, C.; Wong, M.S.; Wang, Y.; Nakamura, S.; Denbaars, S.P.; Keller, S.; Mishra, U.K. Growth of strain-relaxed InGaN on micrometersized patterned compliant GaN pseudo-substrates. Appl. Phys. Lett. 2020, 116, 111101. 28. Williams, D.B.; Carter, C.B. Transmission Electron Microscopy: A Textbook for Material Science, 2nd ed., Springer 2009. 29. Hsieh, H.Y.; Liou, P.W.; Yang, S.; Chen, W.C.; Liang, L.P.; Lee, Y.C.; Yang, C.C. Behaviors of AlGaN strain relaxation on a GaN porous structure studied with d-spacing crystal lattice analysis. Nanomaterials 2023, 13, 1617. 30. Su, X.; Li, Y.; Zhang, M.; Hu, P.; Tian, Z.; Guo, M.; Zhang, Y.; Yun, F. Performance improvement of ultraviolet-A multiple quantum wells using a vertical oriented nanoporous GaN underlayer. Nanotechnology 2020, 31, 445202. 31. Monaico, E.; Tiginyanu, I.; Ursaki, V. Porous semiconductor compounds. Semiconductor Science and Technology 2020, 35, 103001. 32. Vurgaftman, I.; Meyer, J.R.; Ram-Mohan, L. R. Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 2001, 89, 5815-5875. | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91262 | - |
dc.description.abstract | 在這論文研究中,我們使用晶格d-spacing分析技術,探討兩種不同磊晶結構所製作三種不同平台結構樣品的應力釋放行為。這些應力釋放是由平台和表面下多孔結構這兩個因素所引起。在連續或調變的電流下,經由電化學蝕刻過程形成表面下多孔結構。當平台尺寸較小(約100微米)時,台面結構主導應力釋放的結果。當平台尺寸較大(>300微米)時,多孔隙結構在應力釋放中扮演重要的角色。多孔隙結構內的定向孔隙延伸導致非均向應力釋放。在電化學蝕刻過程中使用調變電流,我們可以觀察到週期性的低孔隙率環狀帶,其方向與蝕刻溝槽延伸方向垂直。這些低孔隙率帶在電化學蝕刻電流啟動後形成。在多孔隙結構內出現這些低孔隙率帶後,應力釋放變得較弱。 | zh_TW |
dc.description.abstract | In this thesis research, we investigate the strain relaxation behaviors of the four samples of two different epitaxial structures and three different mesa structures based on the technique of d-spacing crystal lattice analysis. The strain relaxations are produced by the two factors of mesa fabrication and the formation of subsurface porous structure (PS). A PS is formed through an electrochemical etching (ECE) process with either continuous or modulated current supply. When mesa size is small (~100 micron), the effect of mesa fabrication dominated the strain relaxation result. When mesa size is large (>300 micron), PS plays a more important role in strain relaxation. The oriented pore extension in a PS results in the behavior of anisotropic strain relaxation. With modulated current supply in an ECE process, periodic ring bands of lower porosities can be observed with their orientation perpendicular to the etched trench extension direction. Such low-porosity bands are formed right after ECE current is switched off and turned on. With such low-porosity bands in a PS, the strain relaxation effect becomes weaker. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-12-20T16:12:14Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-12-20T16:12:14Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 口試委員審定書 i
致謝 ii 中文摘要 iii Abstract iv Contents: v List of Figure: viii List of Table: xx Chapter 1 Introduction 1 1.1 Subsurface GaN porous structures 1 1.2 Subsurface GaN porous structures as effective strain dampers 1 1.3 Strain relaxation in an overgrown AlGaN layer on a subsurface GaN porous structure 3 1.4 Research motivations 4 1.5 Thesis structure 5 Chapter 2 Sample Structures and Research Methods 11 2.1 Growths of GaN and InGaN/GaN quantum-well templates 11 2.2 Sample fabrication procedures 11 2.3 Demonstration of d-spacing crystal lattice analysis 12 Chapter 3 Strain Relaxation Behaviors Caused by a Subsurface Porous Structure 26 3.1 Mesa structures and vertical locations for d-spacing analysis 26 3.2 Porous structure with continuous current supply 27 3.3 Porous structure with modulated current supply 28 3.4 Comparison of strain relaxations with different porous structures 30 Chapter 4 Strain Relaxation in a 300-micron Square Mesa of the Quantum-well Template 55 4.1 Locations for d-spacing analysis and porous structures 55 4.2 Mesa with a porous structure based on continuous current supply 56 4.3 Mesa with a porous structure based on modulated current supply 57 4.4 d-spacing analysis results 58 Chapter 5 Strain Relaxation in a 100-micron Circular Mesa of the Quantum-well Template 87 5.1 Mesa and porous structures 87 5.2 d-spacing analysis 88 5.3 Strain relaxation results 89 Chapter 6 Anisotropic Strain Relaxation in a Long-stripe Mesa of the Quantum-well Template 112 6.1 Mesa and porous structures 112 6.2 d-spacing analysis 112 6.3 Strain relaxation results 113 Chapter 7 Discussions 129 7.1 Relative effects of mesa and porous structures on strain relaxation 129 7.2 Control of porous structure 130 Chapter 8 Conclusions 131 References 132 | - |
dc.language.iso | en | - |
dc.title | 針對表面下氮化鎵孔隙結構造成應力釋放的晶格常數分析研究 | zh_TW |
dc.title | Lattice Constant Analysis Study on the Strain Relaxations Caused by Subsurface GaN Porous Structures | en |
dc.type | Thesis | - |
dc.date.schoolyear | 112-1 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 吳育任;陳奕君;林建中;廖哲浩 | zh_TW |
dc.contributor.oralexamcommittee | Yuh-Renn Wu;I-Chun Cheng;Chien-Chung Lin;Zhe-Hao Liao | en |
dc.subject.keyword | 晶格常數分析,氮化鎵,多孔隙結構, | zh_TW |
dc.subject.keyword | Lattice Constant Analysis,GaN,Porous structure, | en |
dc.relation.page | 134 | - |
dc.identifier.doi | 10.6342/NTU202304300 | - |
dc.rights.note | 同意授權(限校園內公開) | - |
dc.date.accepted | 2023-10-12 | - |
dc.contributor.author-college | 電機資訊學院 | - |
dc.contributor.author-dept | 光電工程學研究所 | - |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-112-1.pdf 目前未授權公開取用 | 6.48 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。