利用電化學蝕刻將膠體量子點塞入氮化鎵平台陣列次表面孔隙結構供顯示彩色濾光片應用

Abstract

我們展示了一種將膠體量子點混入電解質溶液來產生電化學蝕刻以製造平台陣列濾光片的技術，該技術可應用於彩色顯示。我們進行了一系列實驗獲得可行的電化學蝕刻條件和優化的長晶結構。當電化學蝕刻高導電性的氮化鎵時，混合的量子點可與電解質溶液一起流入平台區域下的蝕刻孔洞中。使用具有厚氮化鎵覆蓋層的長晶結構，我們可在電化學蝕刻中施加高達 17 伏特的高電壓，在單色樣品中的平台上產生明亮的量子點發光效果，同時不會造成表面損壞。在製造雙色樣品的過程中，在塞入第二種顏色的量子點的第二次電化學蝕刻中，量子點交互影響導致不同顏色的兩個區域之間的顏色對比度下降。儘管利用光阻覆蓋可以降低量子點相互影響，但固化光阻所需的高溫會嚴重破壞量子發光。

A technique to fabricate mesa array color filters for potential application to color display based on an upgraded electrochemical etching (ECE) process by mixing colloidal quantum dots (QDs) with electrolyte is proposed and demonstrated. A series of experiments are undertaken to achieve feasible ECE conditions and optimized epitaxial structures. The mixed QDs can flow with the electrolyte into the etched pores under the designated mesa regions when the ECE process etches the high-conductivity layers of the GaN epitaxial structures. By using an epitaxial structure with a thick GaN capping layer (500 nm), a high applied voltage in ECE up to 17 V is used for fabricating bright QD emission at mesas in a single-color sample while no surface damage is observed. In the efforts of fabricating a two-color sample, the QD cross-insertion behavior during the second ECE process for inserting the QDs of the second color leads to a degraded color contrast between the two panels of different colors. Although a photoresist coverage may minimize the QD cross-insertion behavior, the elevated temperatures required for solidifying the photoresist severely damage the QDs and quench their emission.