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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李尉彰 | zh_TW |
| dc.contributor.advisor | Wei-Chang Li | en |
| dc.contributor.author | 謝宜潔 | zh_TW |
| dc.contributor.author | I-Chieh Hsieh | en |
| dc.date.accessioned | 2023-10-03T16:33:38Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-10-03 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-08-08 | - |
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Fei, "On the effective coefficient of thermal expansion (CTE) of bilayer/trilayer in semiconductor package substrates," in 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2015. [29] C. Chao-Lin, T. Ming-Han and F. Weileun, "Determining the thermal expansion coefficient of thin films for a CMOS MEMS process using test cantilevers," Journal of Micromechanics and Microengineering, vol. 25, no. 2, p. 025014, 2015. [30] J. M. Bustillo, R. T. Howe and R. S. Muller, "Surface micromachining for microelectromechanical systems," Proceedings of the IEEE, vol. 86, no. 8, pp. 1552-1574, 1998. [31] H. Qu, "CMOS MEMS fabrication technologies and devices," Micromachines, vol. 7, no. 1, p. 14, 2016. [32] S.-H. Tseng, "CMOS MEMS Design and Fabrication Platform," Frontiers in Mechanical Engineering, vol. 8, p. 894484, 2022. [33] S.-S. Li, "CMOS-MEMS Resonators," in Encyclopedia of Nanotechnology, Springer Netherlands, 2016, pp. 557-574. [34] C. Hsueh, "Thermal stresses in elastic multilayer systems," Thin Solid Films, vol. 418, no. 2, pp. 182-188, 2002. [35] R. Perello-Roig, S. Barcelo, J. Verd, S. Bota and J. Segura, "Temperature compensation in CMOS-MEMS oscillators via folded-anchor resonator geometrical tuning," in 2023 23st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Kyoto, Japan, 2023. [36] C. Chao-Yu, L. Ming-Huang, L. Cheng-Syun and L. Sheng-Shian, "A CMOS-Integrated MEMS Platform for Frequency Stable Resonators—Part II: Design and Analysis," Journal of Microelectromechanical Systems, vol. 28, pp. 755-765, Oct. 2019. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90543 | - |
| dc.description.abstract | 本論文研究在0.35-μm CMOS-MEMS製程平台上開發一作為溫度補償之共振器，由於MEMS計時裝置技術開始漸漸取代石英振盪器，應用在對於那些品質與可靠度要求較高或嚴苛環境下運轉的系統，因此本研究目的為在CMOS平台上建立具有溫度補償性能的元件，以減低環境溫度變化下造成的頻率變化導致計時器產生誤差，而此溫度補償元件利用彎曲電極被動式電剛性頻率補償技術，其優點是不需要過於複雜的後製程處理，特別的是，占晶片面積比小的優點使此彎曲電極可適用於CMOS-MEMS技術中幾乎所有類型的共振器，其是基於間隙變窄的彎曲梁和共振器之間產生與溫度相依的傳感間隙，進而抵銷溫度變化下，隨溫度變化的機械剛性。
本研究成功使其共振器之頻率溫度係數(Temperature Coefficient of Frequency, TCF)由原本未經補償約-88.56 ppm/°C下降為+10.75 ppm/°C、在0-90°C範圍整體頻率飄移由8236.07 ppm下降為1984.87 ppm，對於整體頻率飄移有近4.14倍的改善。 為了本研究亦提出預測頻率偏差的理論模型，考慮熱應力造成結構退縮程度，預測傳感間隙隨溫度變化的影響，並且與實驗結果互相驗證，並提出不同CMOS-MEMS共振器形式補償結果例如：兩端自由梁、兩端固定梁。最後，在修正過後的理論模型中提出最佳化補償結構與補償電壓設計，達到最小頻率偏移結果。 | zh_TW |
| dc.description.abstract | This thesis studies the development of a resonator as a temperature compensation on the 0.35-μm CMOS-MEMS manufacturing platform. The objective is to incorporate temperature compensation characteristics in the component to mitigate frequency variations caused by changes in ambient temperature. The temperature compensation component employs arc-beam electrodes, leveraging the advantages of passive electrical stiffness frequency compensation technique, which simplifies post-processing requirements. Notably, the small chip area ratio of the arc-beam electrode makes it compatible with nearly all types or resonators in CMOS-MEMS technology.
The proposed approach is based on the temperature-dependent gap spacing between the narrowed arc-beam and the main resonator. By counteracting temperature changes and adapting to mechanical stiffness variations with temperature, the temperature coefficient of frequency (TCF) of the resonator is effectively reduced from approximately -88.56 ppm/°C (without compensation) to +10.75 ppm/°C. Consequently, the overall frequency drift within the temperature range of 0°C - 90°C experiences a significant improvement, decreasing from 8236.07 ppm to 1984.87 ppm, representing an enhancement of nearly 4.14 times. Furthermore, this thesis introduces a theoretical model for predicting frequency deviations resulting from changes in the gap spacing due to temperature variations. The predictions are validated through experimental results, and a variety of compensation techniques for different CMOS-MEMS resonators are proposed, including free-free beam, double-clamped beam resonators. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-10-03T16:33:38Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-10-03T16:33:38Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員會審定書 i
摘要 ii ABSTRACT iii 致謝 iv 目錄 v 圖目錄 vii 表目錄 x 第一章 緒論 1 1-1 研究背景 1 1-2 文獻回顧 4 1-2-1 主動溫度補償元件 5 1-2-2 被動溫度補償元件 6 1-3 論文架構 8 第二章 電容式共振器之運作原理及模型 9 2-1 微機電共振器運作原理 9 2-2 電容式共振器模型理論分析 10 2-2-1 等效單質點質量-彈簧-阻尼系統 10 2-2-2 電容式共振器電剛性分析 15 2-2-3 共振器小訊號等效電路 24 第三章、彎曲梁傳感間隙模型設計 26 3-1 結構設計與頻率補償原理 26 3-2 與溫度相依補償傳感間隙設計 27 第四章、元件製程步驟 34 4-1 CMOS-MEMS 0.35-μm製程 34 4-2 後製程蝕刻步驟 35 第五章、實驗結果與討論 37 5-1 量測架設 37 5-2 頻率響應量測 39 5-3 被動式頻率補償實驗結果討論 40 5-4 兩端固定梁頻率補償結果 45 5-5 最佳化彎曲樑設計 47 第六章、結論與未來展望 49 6-1 結論 49 6-2 未來展望 50 參考文獻 52 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | CMOS-MEMS | zh_TW |
| dc.subject | 電剛性 | zh_TW |
| dc.subject | 被動式溫度補償 | zh_TW |
| dc.subject | 兩端自由梁共振器 | zh_TW |
| dc.subject | 兩端固定梁共振器 | zh_TW |
| dc.subject | passively frequency compensation | en |
| dc.subject | electrical stiffness | en |
| dc.subject | free-free beam resonator | en |
| dc.subject | CMOS-MEMS | en |
| dc.subject | double-clamped beam resonator | en |
| dc.title | 基於彎曲梁結構之CMOS-MEMS共振器頻率溫度補償技術 | zh_TW |
| dc.title | Frequency Temperature Compensation Technique for CMOS-MEMS Resonators using Arc Beam Structures | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 張培仁;李銘晃 | zh_TW |
| dc.contributor.oralexamcommittee | Pei-Zen Chang;Ming-Huang Li | en |
| dc.subject.keyword | CMOS-MEMS,被動式溫度補償,電剛性,兩端自由梁共振器,兩端固定梁共振器, | zh_TW |
| dc.subject.keyword | CMOS-MEMS,passively frequency compensation,electrical stiffness,free-free beam resonator,double-clamped beam resonator, | en |
| dc.relation.page | 55 | - |
| dc.identifier.doi | 10.6342/NTU202303598 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2023-08-10 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 應用力學研究所 | - |
| dc.date.embargo-lift | 2028-08-08 | - |
| 顯示於系所單位： | 應用力學研究所 | |
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