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標題: | 閘極外圍氧化層移除之金氧半穿隧二極體之強化暫態電流行為及側向電流研究 Enhanced Transient Current Behavior and Lateral Current Investigation of MIS(p) Tunnel Diode by Oxide Removal at the Gate Edge Diodes |
作者: | 林軒毅 Hsuan-Yi Lin |
指導教授: | 胡振國 Jenn-Gwo Hwu |
關鍵字: | 金氧半穿隧二極體,閘極外圍氧化層移除,氧化層電荷,深空乏效應,記憶體,暫態行為,側向電流, metal-insulator-semiconductor (MIS) tunnel diode (TD),edge-removed (ER) structure,oxide charges,deep depletion phenomenon,memory,transient behavior,lateral current, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 本論文旨在探討金屬-氧化層-半導體穿隧二極體元件移除閘極外圍氧化層後之強化暫態電流及側向電流研究。在第一章中,我們首先探討了傳統共用氧化層的金氧半穿隧二極體元件基礎電性,例如在逆偏壓下產生的厚度與電流關係及深空乏效應,並提及了近期特殊結構的金氧半穿隧二極體在暫態記憶體相關的應用及挑戰。在第二章中,我們提出了一個移除閘極外圍氧化層的金氧半穿隧二極體結構,並探討了其基礎電性與共用氧化層金氧半穿隧二極體的差異,電性差異可歸因於邊緣氧化層移除造成的少數載子缺乏,以及額外的邊緣缺陷形成的漏電流通道,都使得移除閘極外圍氧化層金氧半穿隧二極體有較低的逆偏壓電流及深空乏現象。在第三章中,我們透過同心圓閘極金氧半穿隧二極體結構探討了側向電流與氧化層移除之關係,並發現在較薄的共用氧化層金氧半穿隧二極體當中,中心至環狀閘極之側向電流會遠大於中心閘極之垂直電流,我們將此現象歸因於閘極外圍氧化層之介面正電荷所引起之額外電子流通道。並且也透過電腦模擬及機制說明佐證此一現象。在第四章中,我們對移除閘極外圍氧化層金氧半穿隧二極體進行了強化暫態行為之研究,透過深空乏效應在電壓切換時能有較大的變化以及較低的漏電流,我們展示了移除閘極外圍氧化層金氧半穿隧二極體作為動態存取記憶體之潛力,並對氧化層厚度對暫態行為之影響有進一步的研究。 The purpose of this thesis is to investigate the enhanced transient current and lateral current of the metal-insulator-semiconductor tunnel diode (MISTD) after removing the oxide layer outside the gate edge. In the first chapter, we first discussed the basic electrical properties of the traditional planar MISTD, such as the relationship between thickness and current under reverse bias and the deep depletion phenomenon. We also mentioned the recent applications and challenges of special structure MISTDs in transient memory. In the second chapter, we proposed an edge-removed (ER) MISTD structure and discussed its basic electrical properties and differences from the planar MISTD. The electrical differences can be attributed to the lack of minority carriers caused by the removal of the edge oxide layer, and the additional leakage current channel formed by the edge defects, both of which make the ER MISTD have a lower reverse bias current and deeper depletion phenomenon. In the third chapter, we explored the relationship between lateral current and oxide layer removal through the concentric MISIM TD structure and found that in the thinner planar MISTD, the center-to-ring current is much larger than the vertical current of the center gate. We attribute this phenomenon to the additional electron flow channel caused by the positive interface charge of the oxide layer outside the gate. This phenomenon is also supported by TCAD simulations and mechanism explanations. In the fourth chapter, we conducted a study on the enhanced transient behavior of the ER MISTD. Through the deeper depletion effect, there can be a larger change when switching voltage and a reduced leakage current. We demonstrated the potential of the ER MISTD as a dynamic random-access memory and further studied the impact of oxide thickness on transient behavior. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90056 |
DOI: | 10.6342/NTU202304165 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 電子工程學研究所 |
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