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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣 | zh_TW |
dc.contributor.advisor | Chao-Hsin Wu | en |
dc.contributor.author | 陳映全 | zh_TW |
dc.contributor.author | Ying-Chuan Chen | en |
dc.date.accessioned | 2023-09-22T17:08:36Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-09-22 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-08-10 | - |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90034 | - |
dc.description.abstract | 本研究透過實驗和模擬研究了二硫化鎢(WS2)、二硫化鉬(MoS2)和六方氮化硼(h-BN)等二維材料電阻式記憶體(2D-material-based RRAM)。深入討論了主動層厚度的影響,從而找到具有最佳關鍵績效指標(KPIs)的二維材料電阻式記憶體厚度。這項工作揭示出 2D-material-based RRAM 和傳統氧化物 RRAM 之間的根本區別。此外,此研究採用動力學蒙特卡羅(KMC)模型來提取 2D-material-based RRAM 元件的物理參數。與傳統氧化物RRAM 相比,二維材料沿垂直方向具有較低的擴散活化能,從而降低RRAM 元件的能耗並縮短切換時間。值得注意的是,在透過化學氣相沉積(CVD)生長的2D-material-based RRAM 樣品中觀察到其擴散活化能低於機械剝離樣品的擴散活化能,表明基於 CVD 的2D-material-based RRAM 具有更卓越的元件性能。我們的結果表明,MoS2 在三種二維材料中具有最快的切換速度。 | zh_TW |
dc.description.abstract | In this study, we conducted investigations on two-dimensional resistive random access memory (2D-material-based RRAM) materials, specifically tungsten disulfide (WS2), molybdenum disulfide (MoS2), and hexagonal boron nitride (h-BN), employing a combination of experimental and simulation methodologies. The influence of the active layer thickness is thoroughly discussed, leading to the determination of the optimal thickness for 2D-material-based RRAM materials exhibiting superior key performance indicators (KPIs). Our research uncovers a fundamental distinction between 2D-material-based RRAM and conventional oxide RRAM. Moreover, the kinetic Monte Carlo (KMC) model is employed in this study to extract the physical parameters of the 2D-material-based RRAM devices. In comparison with traditional oxide RRAM, the 2D materials demonstrate a lower diffusion activation energy along the vertical direction, thereby enabling reduced energy consumption and shorter switching times for RRAM devices. Significantly, the diffusion activation energy observed in the 2D-material-based RRAM sample grown via chemical vapor deposition (CVD) is lower than that of the mechanically exfoliated sample, indicating superior device performance for CVD 2D-material-based RRAM. Our results indicate that among the three considered 2D materials, MoS2 exhibits the fastest switching speed. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-09-22T17:08:36Z No. of bitstreams: 0 | en |
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dc.description.tableofcontents | 口試委員審定書(i)
致謝(ii) 摘要(iv) Abstract(v) 目錄(vii) 圖目錄(x) 表目錄(xii) 第一章背景介紹(1) 1.1 記憶體發展趨勢(1) 1.2 電阻式記憶體(3) 1.2.1 元件關鍵績效指標(5) 1.2.1.1 均勻性(5) 1.2.1.2 耐用性(8) 1.2.1.3 保真性(8) 1.2.1.4 微縮趨勢(9) 1.2.1.5 多位元操作(10) 1.2.2 類神經網絡應用(11) 1.3 2D-material-based RRAM 之研究動機(13) 1.4 電阻式記憶體模擬器(14) 第二章模擬方法(16) 2.1 元件結構與模擬模型(16) 2.2 程式架構(18) 2.3 三維 Poisson 方程(20) 2.3.1 Fermi-Dirac 積分表(21) 2.3.2 缺陷電荷密度(23) 2.4 載子傳輸機制(26) 2.5 動態Monte Carlo 模擬(29) 2.5.1 缺陷生成(31) 2.5.2 離子擴散(32) 2.5.3 鍵結復合(33) 2.6 保真時間(34) 2.7 相對關鍵績效指標(37) 第三章模擬結果與討論(39) 3.1 WS2、MoS2 與h-BN RRAM 之特性比較(39) 3.1.1 保真度(42) 3.1.2 切換時間(43) 3.2 化學氣相沉積(45) 3.3 變溫電流特性(47) 3.4 厚度與電流特性之關係(49) 3.4.1 Forming 操作(49) 3.4.2 崩潰電場(50) 3.4.3 模擬預測(51) 3.4.3.1 WS2 RRAM 之最佳厚度(51) 3.4.3.2 MoS2 RRAM 之最佳厚度(55) 第四章結論(58) 4.1 研究總結(58) 4.2 未來展望(59) 參考文獻(60) 附錄A — 參數設置(73) | - |
dc.language.iso | zh_TW | - |
dc.title | 動態蒙地卡羅模擬應用於二維材料電阻記憶體之研究 | zh_TW |
dc.title | Studies of 2D Material Resistive Random-Access Memory by Kinetic Monte Carlo Simulation | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.coadvisor | 吳育任 | zh_TW |
dc.contributor.coadvisor | Yuh-Renn Wu | en |
dc.contributor.oralexamcommittee | 陳建宏;賴韋志;黃嘉彥 | zh_TW |
dc.contributor.oralexamcommittee | Edward Chen;Wei-Chi Lai;Chia-Yen Huang | en |
dc.subject.keyword | 電阻式記憶體,二維材料,動態蒙地卡羅,保真時間,切換時間, | zh_TW |
dc.subject.keyword | Resistive random-access memory,Two-dimensional material,Kinetic Monte Carlo,Retention time,Switching time, | en |
dc.relation.page | 74 | - |
dc.identifier.doi | 10.6342/NTU202302780 | - |
dc.rights.note | 未授權 | - |
dc.date.accepted | 2023-08-12 | - |
dc.contributor.author-college | 電機資訊學院 | - |
dc.contributor.author-dept | 光電工程學研究所 | - |
顯示於系所單位: | 光電工程學研究所 |
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